Si3586DV Datasheet

Si3586DV
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
- 20
RDS(on) (Ω)
ID (A)
0.060 at VGS = 4.5 V
3.4
0.070 at VGS = 2.5 V
3.2
0.100 at VGS = 1.8 V
2.5
0.110 at VGS = - 4.5 V
- 2.5
0.145 at VGS = - 2.5 V
- 2.0
0.220 at VGS = - 1.8V
- 1.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Fast Switching In Small Footprint
• Very Low RDS(on) for Increased Efficiency
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
TSOP-6
Top View
3 mm
S2
D1
G1
1
6
D1
S2
2
5
S1
G2
G1
G2
3
4
D2
2.85 mm
Ordering Information: Si3586DV-T1-E3 (Lead (Pb)-free)
Si3586DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
D2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)a
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
PD
P-Channel
Steady State
5s
Steady State
20
- 20
3.4
2.9
2.7
2.3
- 2.5
- 2.1
- 2.0
- 1.7
±8
1.05
0.75
- 1.05
- 0.75
1.15
0.83
1.15
0.83
0.73
0.53
0.73
0.53
TJ, Tstg
Unit
V
±8
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
5s
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
93
110
130
150
90
90
Unit
°C/W
Note:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72310
S09-2110-Rev. D, 12-Oct-09
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Si3586DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
VGS(th)
IGSS
IDSS
VDS = VGS, ID = 250 µA
N-Ch
0.40
1.1
VDS = VGS, ID = - 250 µA
P-Ch
- 0.40
- 1.1
VDS = 0 V, VGS = ± 8 V
N-Ch
± 100
VDS = 0 V, VGS = ± 8 V
P-Ch
± 100
VDS = 20 V, VGS = 0 V
N-Ch
1
VDS = - 20 V, VGS = 0 V
P-Ch
-1
VDS = 20 V, VGS = 0 V, TJ = 85 °C
N-Ch
10
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
P-Ch
- 10
ID(on)
RDS(on)
VDS ≥ 5 V, VGS = 4.5 V
N-Ch
5
VDS ≤ - 5 V, VGS = - 4.5 V
P-Ch
-5
VGS = 4.5 V, ID = 3.4 A
N-Ch
0.047
VGS = - 4.5 V, ID = - 2.5 A
P-Ch
0.086
0.110
VGS = 2.5 V, ID = 3.2 A
N-Ch
0.054
0.070
VGS = - 2.5 V, ID = - 2.0 A
P-Ch
0.116
0.145
VGS = - 1.8 V, ID = - 2.5 A
N-Ch
0.075
0.100
VGS = - 1.8 V, ID = - 1.0 A
P-Ch
0.170
0.220
µA
0.060
VDS = 5 V, ID = 3.4 A
N-Ch
13
P-Ch
6
IS = 1.05 A, VGS = 0 V
N-Ch
0.8
1.1
IS = - 1.05 A, VGS = 0 V
P-Ch
- 0.8
- 1.1
N-Ch
4.1
6.0
P-Ch
5
7.5
N-Ch
0.65
P-Ch
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A N-Ch
P-Ch
0.68
N-Ch
2.6
P-Ch
9.8
N-Ch
30
P-Ch
28
45
N-Ch
52
85
VSD
nA
A
VDS = - 5 V, ID = - 2.5 A
gfs
V
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 3.4 A
Rg
td(on)
tr
td(off)
tf
N-Channel
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω
0.8
1.3
Ω
45
P-Ch
55
85
N-Ch
25
40
P-Ch
55
85
N-Ch
20
30
P-Ch
32
50
IF = 1.05 A, dI/dt = 100 A/µs
N-Ch
25
40
IF = - 1.05 A, dI/dt = 100 A/µs
P-Ch
25
40
P-Channel
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
trr
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72310
S09-2110-Rev. D, 12-Oct-09
Si3586DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
8
8
7
7
6
6
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 5 V thru 2 V
5
1.5 V
4
3
5
4
3
TC = 125 °C
2
2
1
1
0
0
0.00
25 °C
- 55 °C
0
1
2
3
4
5
0.25
0.50
VDS - Drain-to-Source Voltage (V)
1.00
1.25
1.50
1.75
2.00
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
600
0.10
500
0.08
VGS = 4.5 V
0.06
VGS = 2.5 V
0.04
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.75
400
300
200
Coss
0.02
100
Crss
0.00
0
0
1
2
3
4
5
6
7
8
0
8
12
16
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
20
1.6
6
VDS = 10 V
ID = 3.4 A
1.4
4
3
2
(Normalized)
5
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
4
ID - Drain Current (A)
VGS = 4.5 V
ID = 3.4 A
1.2
1.0
0.8
1
0
0
1
2
3
4
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72310
S09-2110-Rev. D, 12-Oct-09
5
6
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si3586DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.25
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 3.4 A
TJ = 25 °C
1
0.20
0.15
0.10
0.05
0.00
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.2
8
0.1
6
0.0
Power (W)
VGS(th) Variance (V)
ID = 250 µA
- 0.1
4
- 0.2
2
- 0.3
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.1
0.01
TJ - Temperature (°C)
1
10
30
Time (s)
Single Pulse Power (Junction-to-Ambient)
Threshold Voltage
10
I D - Drain Current (A)
Limited by
RDS(on)*
1 ms
1
10 ms
100 ms
0.1
1 s, 10 s
DC
TC = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 72310
S09-2110-Rev. D, 12-Oct-09
Si3586DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 130 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72310
S09-2110-Rev. D, 12-Oct-09
www.vishay.com
5
Si3586DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
8
7
25 °C
6
I D - Drain Current (A)
6
I D - Drain Current (A)
TC = - 55 °C
7
VGS = 5 V thru 2.5 V
2V
5
4
3
1.5 V
2
125 °C
5
4
3
2
1
1
0
0.0
0
0
1
2
3
4
5
0.5
Output Characteristics
2.0
2.5
Transfer Characteristics
0.75
650
0.60
520
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
0.45
0.30
VGS = 1.8 V
Ciss
390
260
Coss
VGS = 2.5 V
130
0.15
Crss
VGS = 4.5 V
0
0.00
0
1
2
3
4
5
6
7
0
8
4
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
20
1.6
6.5
VGS = 4.5 V
ID = 2.5 A
VDS = 10 V
ID = 2.5 A
1.4
3.9
2.6
(Normalized)
5.2
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.0
1.2
1.0
0.8
1.3
0.0
0
1
2
3
4
Qg - Total Gate Charge (nC)
Gate Charge
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6
5
6
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72310
S09-2110-Rev. D, 12-Oct-09
Si3586DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
TJ = 150 °C
1
0.4
0.3
ID = 2.5 A
0.2
0.1
0.0
0.1
0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
8
0.3
Power (W)
V GS(th) Variance (V)
6
0.2
ID = 250 µA
0.1
4
0.0
2
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
30
Time (s)
TJ - Temperature (°C)
Single Pulse Power (Junction-to-Ambient)
Threshold Voltage
10
I D - Drain Current (A)
Limited by
RDS(on)*
1 ms
1
10 ms
100 ms
0.1
TC = 25 °C
Single Pulse
0.01
0.1
1 s, 10 s
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 72310
S09-2110-Rev. D, 12-Oct-09
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Si3586DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 130 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72310.
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Document Number: 72310
S09-2110-Rev. D, 12-Oct-09
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Revision: 02-Oct-12
1
Document Number: 91000