Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10N80
Power MOSFET
10A, 800V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 10N80 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.

FEATURES
* RDS(ON) < 1.1Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 45nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 15pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N80L-T3P-T
10N80G-T3P-T
10N80L-TC3-T
10N80G-TC3-T
10N80L-TF2-T
10N80G-TF2-T
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
Package
TO-3P
TO-230
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
1 of 7
QW-R502-218.J
10N80

Power MOSFET
MARKING INFORMATION
PACKAGE
MARKING
TO-3P/TO-230/TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-218.J
10N80

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (TC = 25°С)
ID
10
A
Pulsed Drain Current (Note 2)
IDM
40
A
Avalanche Current (Note 2)
IAR
10
A
920
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
24
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-3P
240
TO-230
W
Power Dissipation
156
TO-220F2
66
PD
TO-3P
1.92
Linear Derating Factor above TC = 25°С TO-230
W/°С
1.25
TO-220F2
0.528
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=17.3mH, IAS=10A, VDD=50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤ 10 A, di/dt ≤ 200A/μs, VDD ≤BVDSS, Starting TJ=25°C.

THERMAL DATA
PARAMETER
TO-3P
Junction to Ambient
TO-220F2/TO-230
TO-3P
TO-230
Junction to Case
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
40
62.5
0.52
0.8
1.89
UNIT
°С/W
°С/W
3 of 7
QW-R502-218.J
10N80

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
TEST CONDITIONS
VGS =0 V, ID =250 µA
VDS =800V, VGS =0 V
Drain-Source Leakage Current
IDSS
VDS =640V, TC =125°C
Gate-Body Leakage Current
IGSS
VDS =0 V, VGS = ±30 V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250µA
Static Drain-Source On-Resistance
RDS(ON)
VGS = 10V, ID = 5.0A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =25V, VGS =0V,
Output Capacitance
COSS
f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=400V, ID=10.0A,
RG=25Ω (Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDS =640V, VGS =10V,
Gate Source Charge
QGS
ID =10.0A (Note 1,2)
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=10.0 A,VGS=0V
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0V, dIF /dt = 100 A/µs,
IS = 10.0A (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. Independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
800
V
10
100
±100
0.98
3.0
0.9
5.0
1.1
2150 2800
180 230
15
20
50
130
90
80
45
13.5
17
110
270
190
170
58
µA
nA
V/°С
V
Ω
pF
pF
pF
ns
nC
1.4
V
10.0
A
40.0
730
10.9
ns
nC
4 of 7
QW-R502-218.J
10N80

Power MOSFET
TEST CIRCUIT
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R502-218.J
10N80

Power MOSFET
TEST CIRCUIT(Cont.)
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Forward Voltage Drop
6 of 7
QW-R502-218.J
10N80

Power MOSFET
TYPICAL CHARACTERISTICS
Drain-Source On-State
Resistance Characteristics
Drain Current vs. Source to Drain Voltage
5
10
4
Drain Current, ID (A)
8
Drain Current,ID (A)
VGS=10V,
ID=5A
6
4
3
2
1
2
0
0
0
200
400
600
800
0
1000
3
4
Drain Current vs. Gate Threshold Voltage
Drain Current vs. Drain-Source
Breakdown Voltage
5
400
Drain Current,ID (µA)
2.5
Drain Current,ID (mA)
2
Drain to Source Voltage, VDS (V)
3
2
1.5
1
0.5
0
1
Source to Drain Voltage,VSD (mV)
350
300
250
200
150
100
50
0
1
2
3
Gate Threshold Voltage,VTH (V)
4
0
0
200
400
600
800
1000
Drain-Source Breakdown Voltage,BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R502-218.J
Similar pages