Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10N90
Power MOSFET
10A, 900V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC10N90 is a N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 10N90 is generally applied in high efficiency switch
mode power supply.
„
FEATURES
* RDS(ON) [email protected] =10V
* Lower Leakage Current: 25µA (Max.) @ VDS = 900V
* Improved Gate Charge
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N90L-T3P-T
10N90G-T3P-T
10N90L-T47-T
10N90G-T47-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-3P
TO-247
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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QW-R502-502.F
10N90
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
900
V
Gate-Source Voltage
VGSS
±30
V
10
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
40
A
Avalanche Current (Note 2)
IAR
10
A
794
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
28
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
1.5
V/ns
Power Dissipation
PD
183
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 15mH, IAS = 10A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C
3. ISD ≤ 10A, di/dt ≤ 190A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2%
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
40
0.68
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ
Drain-Source Leakage Current
IDSS
Forward
Gate- Source Leakage Current
IGSS
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-State Resistance
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
MIN
ID=250µA, VGS=0V
ID=250µ
VDS=900V
VGS=+30V
VGS=-30V
900
VGS=VDS, ID=250µA
VGS=10V, ID=5A
3.0
VGS=0V, VDS=25V, f=1.0MHz
TYP
1.11
MAX UNIT
V
V/°C
25
µA
100 nA
-100 nA
5.0
1.35
V
Ω
2760 3580
245 290
105 125
pF
pF
pF
1.15
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Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
SWITCHING PARAMETERS
127
Total Gate Charge
QG
VGS=10V, VDS=720V, ID=10A
Gate to Source Charge
QGS
19.2
(Note 1, 2)
Gate to Drain Charge
QGD
56.8
29
Turn-ON Delay Time
tD(ON)
Rise Time
tR
54
VDD=450V, ID=10A, RG=9.6Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
161
Fall-Time
tF
47
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Integral Reverse Pn-Diode In
Maximum Body-Diode Pulsed Current
The MOSFET
ISM
(Note1)
Drain-Source Diode Forward Voltage
VSD
IS=10A, VGS=0V, TJ=25°C
(Note 1)
690
Body Diode Reverse Recovery Time
trr
IF=10A, dIF/dt=100A/µs,
TJ=25°C (Note 1)
Body Diode Reverse Recovery Charge
QRR
11.94
Note: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MAX UNIT
165
70
20
330
105
nC
nC
nC
ns
ns
ns
ns
10
A
40
A
1.4
V
ns
µC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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10N90
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
tD(ON)
Pulse Width≤1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
tF
Switching Waveforms
Same Type
as D.U.T.
50kΩ
0.2μF
tD(OFF)
tR
QG
10V
0.3μF
QGS
VDS
QGD
VGS
DUT
3mA
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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10N90
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
„
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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