Datasheet

UNISONIC TECHNOLOGIES CO., LTD
12N80
Power MOSFET
12A, 800V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 12N80 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with planar stripe and DMOS technology. This technology is
specialized in allowing a minimum on-state resistance and superior
switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC 12N80 is universally applied in high efficiency switch
mode power supply.
„
FEATURES
* RDS(on) < 1.0 Ω @ VGS=10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N80L-T47-T
12N80G-T47-T
12N80L-T3P-T
12N80G-T3P-T
12N80L-TC3-T
12N80G-TC3-T
12N80L-TF2-T
12N80G-TF2-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
„
Package
TO-247
TO-3P
TO-230
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-594.G
12N80
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±30
V
ID
12
A
Continuous (TC=25°C)
Drain Current
Pulsed (Note 2)
IDM
48
A
Avalanche Current (Note 2)
IAR
12
A
TO-247
360
W
TO-3P
390
W
Power Dissipation
PD
TO-230
167
W
TO-220F2
51
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
„
THERMAL DATA
PARAMETER
TO-247
Junction to Ambient
TO-3P
TO-220F2/TO-230
TO-247
TO-3P
Junction to Case
TO-230
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
50
40
62.5
0.35
0.32
0.75
2.43
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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„
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA, Referenced to 25°C
VDS=800V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=640V, TC=125°C
Forward
VGS=+30V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=6A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=640V, ID=12A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=400V, ID=12A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=12A, VGS=0V
Body Diode Reverse Recovery Time
trr
VGS=0V, IS=12A, dIF/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
800
V
V/°C
1.0
10
100
100
-100
3.0
0.75
5.0
1.0
4200
315
90
123
27
49
100
198
340
180
1000
17.0
µA
nA
nA
V
Ω
pF
pF
pF
155
45
80
120
220
360
200
nC
nC
nC
ns
ns
ns
ns
12
48
1.4
A
A
V
ns
µC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)
„
Power MOSFET
200
150
100
50
200
150
100
50
0
0
0
0.7
1.4
3.5 4.2
2.1 2.8
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Drain Current, ID (A)
0
200
600
800 1000
400
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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