UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 1.4Ω @ VGS = 10V, ID = 4.5A * Ultra Low Gate Charge (Typical 45 nC) * Low Reverse Transfer Capacitance (CRSS = Typical 14 pF) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 9N90L-T47-T 9N90G-T47-T 9N90L-T3P-T 9N90G-T3P-T 9N90L-T3N-T 9N90G-T3N-T 9N90L-TC3-T 9N90G-TC3-T 9N90L-TF1-T 9N90G-TF1-T 9N90L-TF2-T 9N90G-TF2-T Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-247 TO-3P TO-3PN TO-230 TO-220F1 TO-220F2 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube 1 of 7 QW-R502-217.M 9N90 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-217.M 9N90 Power MOSFET ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25°C) ID 9.0 A Pulsed Drain Current (Note 2) IDM 36 A Avalanche Current (Note 2) IAR 9.0 A Single Pulsed(Note 3) EAS 900 mJ Avalanche Energy 28 mJ Repetitive(Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-247 160 W TO-3P/TO-3PN 240 Power Dissipation TO-230 147 W TO-220F1 56 TO-220F2 58 PD TO-247 1.28 TO-3P/TO-3PN 1.92 Linear Derating Factor above W/°C TO-230 1.176 TC = 25°C TO-220F1 0.448 TO-220F2 0.464 Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-247 TO-3P/TO-3PN Junction to Ambient TO-220F1/ TO-220F2 TO-230 TO-247 TO-3P/TO-3PN Junction to Case TO-230 TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA RATINGS 50 40 UNIT °C/W 62.5 θJC 0.78 0.52 0.85 2.25 2.15 °C/W 3 of 7 QW-R502-217.M 9N90 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 900 Drain-Source Leakage Current IDSS VDS = 900 V, VGS = 0 V Forward IGSSF VGS = 30 V, VDS = 0 V Gate-Body Leakage Current VGS = -30 V, VDS = 0 V Reverse IGSSR Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.99 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 3.0 Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 4.5A 1.05 DYNAMIC PARAMETERS Input Capacitance CISS 1870 VDS = 25 V, VGS = 0 V, Output Capacitance COSS 185 f = 1.0 MHz 21 Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG 215 VDS = 50V, VGS = 10 V ID = 1.3A, IG = 100μA Gate-Source Charge QGS 17 (Note 1,2) 44 Gate-Drain Charge QGD Turn-On Delay Time tD(ON) 100 VDD = 30V, VGS = 10V, Turn-On Rise Time tR 170 ID =0.5 A, RG = 25Ω Turn-Off Delay Time tD(OFF) 410 (Note 1, 2) 175 Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 9.0 A Reverse Recovery Time trr 550 VGS = 0 V, IS = 9.0 A, dIF / dt =100 A/μs (Note 1) Reverse Recovery Charge QRR 6.5 Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MAX UNIT V 10 μA 100 nA -100 nA V/°C 5.0 1.4 V Ω pF pF pF nC nC nC ns ns ns ns 9.0 A 36 A 1.4 V ns μC 4 of 7 QW-R502-217.M 9N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-217.M 9N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VDD VDS(t) Time tP Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-217.M 9N90 TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 200 200 150 150 100 100 50 50 0 0 0 0.7 1.4 2.1 2.8 3.5 4.2 Gate Threshold Voltage, VTH (V) Continuous Drain-Source Diode Forward Current, IS (A) 0 200 600 800 1000 400 Drain-Source Breakdown Voltage, BVDSS (V) Drain Current, ID (A) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-217.M