Si8901EDB Datasheet

Si8901EDB
Vishay Siliconix
Bi-Directional P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VS1S2 (V)
- 20
RS1S2(on) (Ω)
IS1S2 (A)
0.060 at VGS = - 4.5 V
- 4.4
0.080 at VGS = - 2.5 V
- 3.9
0.105 at VGS = - 1.8 V
- 3.4
•
•
•
•
TrenchFET® Power MOSFET
Ultra-Low RSS(on)
ESD Protected: 6000 V
MICRO FOOT® Chipscale Packaging
Reduces Footprint Area, Profile (0.65 mm)
and On-Resistance Per Footprint Area
RoHS
COMPLIANT
APPLICATIONS
• Smart Batteries for Portable Devices
S1
MICRO FOOT
Bump Side View
S2
5 4
Backside View
G1
S2
5.4 kΩ
Pin 1 Identifier
S1
6 3
1
2
8901E
xxx
G2
G1
5.4 kΩ
Device Marking:
G2
8901E = P/N Code
xxx = Date/Lot Traceability Code
Ordering Information:
Si8901EDB-T2-E1 (Lead (Pb)-free)
S1
P-Channel
S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Source1- Source2 Voltage
Gate-Source Voltage
Continuous Source1- Source2 Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 85 °C
Package Reflow Conditions
VGS
± 12
IS1S2
PD
Unit
V
- 4.4
- 3.5
- 3.2
- 2.5
A
- 10
1.7
1
0.8
0.5
TJ, Tstg
Operating Junction and Storage Temperature Range
c
Steady State
- 20
ISM
Pulsed Source1- Source2 Current
Maximum Power Dissipationa
5s
VS1S2
- 55 to 150
IR/Convection
W
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
b
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
60
75
95
120
18
22
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. The foot is defined as the top surface of the package.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
Document Number: 72941
S-82119-Rev. C, 08-Sep-08
www.vishay.com
1
Si8901EDB
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VGS(th)
VSS = VGS, ID = - 350 µA
- 0.45
Typ.
Max.
Unit
Static
Gate Threshold Voltage
- 1.0
V
VSS = 0 V, VGS = ± 4.5 V
±4
µA
VSS = 0 V, VGS = ± 12 V
± 10
mA
VSS = - 20 V, VGS = 0 V
-1
VSS = - 20 V, VGS = 0 V, TJ = 85 °C
-5
IGSS
Gate-Body Leakage
Zero Gate Voltage Source Current
IS1S2
On-State Source Currenta
IS(on)
VSS = - 5 V, VGS = - 4.5 V
Source1- Source2 On-State Resistancea RS1S2(on)
Forward Transconductancea
gfs
µA
-5
A
VGS = - 4.5 V, ISS = - 1 A
0.048
0.060
VGS = - 2.5 V, ISS = - 1 A
0.062
0.080
VGS = - 1.8 V, ISS = - 1 A
0.081
0.105
VSS = - 10 V, ISS = - 1 A
7
Ω
S
b
Dynamic
td(on)
Turn-On Delay Time
VSS = - 10 V, RL = 10 Ω
ISS ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
2.3
3.5
2.2
3.5
1.3
2
9
14
µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 000
10
1000
I GSS - Gate Current (µA)
I GSS - Gate Current (mA)
IGSS at 25 °C (mA)
8
6
4
2
100
TJ = 150 °C
10
1
TJ = 25 °C
0.1
0.01
0
0
3
6
9
12
VGS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
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2
15
0
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Document Number: 72941
S-82119-Rev. C, 08-Sep-08
Si8901EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
10
VGS = 5 thru 2 V
8
6
I D - Drain Current (A)
ID - Drain Current (A)
8
1.5 V
4
6
4
TC = 125 °C
2
2
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.4
1.2
1.6
2.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.14
1.6
VGS = 4.5 V
IS1S2 = 1 A
0.12
1.4
RDS(on) - On-Resistance
(Normalized)
RDS(on) - On-Resistance (Ω)
0.8
0.10
VGS = 1.8 V
0.08
VGS = 2.5 V
0.06
VGS = 4.5 V
0.04
1.2
1.0
0.8
0.02
0.00
0
2
4
6
8
0.6
- 50
10
- 25
ID - Drain Current (A)
On-Resistance vs. Drain Current
25
50
75
100
125
150
On-Resistance vs. Junction Temperature
0.4
0.20
IS1S2 = 5 A
0.3
0.16
IS1S2 = 350 µA
IS1S2 = 1 A
V GS(th) Variance (V)
R DS(on) - On-Resistance (Ω)
0
TJ - Junction Temperature (°C)
0.12
0.08
0.04
0.2
0.1
0.0
- 0.1
0.00
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72941
S-82119-Rev. C, 08-Sep-08
5
- 0.2
- 50
- 25
0
25
50
75
100
125
150
TJ - Temperature (°C)
Threshold Voltage
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Si8901EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
30
Limited
by RDS(on) *
25
10 µs, 100 µs
10
I D - Drain Current (A)
1 ms
Power (W)
20
15
10
10 ms
1
100 ms
1s
0.1
10 s
TC = 25 °C
Single Pulse
DC, 100 s
0.01
5
0.001
0
0.01
0.1
1
100
10
1000
0.1
Time (s)
Single Pulse Power, Junction-to-Ambient
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 95 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
Square Wave Pulse Duration (s)
10- 1
1
Normalized Thermal Transient Impedance, Junction-to-Foot
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Document Number: 72941
S-82119-Rev. C, 08-Sep-08
Si8901EDB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 6-BUMP (2 x 3, 0.8 mm PITCH)
6 x 0.30 ∼ 0.31
Note 3
Solder Mask - 0.4
Note 2
A2
A
A1
e
b Diameter
Bump Note 1
e
e
Recommended Land
8901E
XXX
e
D
s
Mark on Backside of Die
s
e
e
E
Notes (Unless Otherwise Specified):
1. 6 solder bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
2. Backside surface is coated with a Ag/Ni/Ti layer.
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon die back.
Dim.
A
Millimetersa
Inches
Min.
Max.
Min.
Max.
0.600
0.650
0.0236
0.0256
A1
0.260
0.290
0.102
0.114
A2
0.340
0.360
0.0134
0.0142
b
0.370
0.410
0.0146
0.0161
D
1.52
1.6
0.0598
0.0630
E
2.32
2.4
0.0913
0.0945
e
0.750
0.850
0.0295
0.0335
s
0.380
0.400
0.0150
0.0157
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72941.
Document Number: 72941
S-82119-Rev. C, 08-Sep-08
www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000