Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET® Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance RoHS COMPLIANT • ESD Protected: 4000 V ® • MICRO FOOT Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area APPLICATIONS • Battery Protection Circuit - 1-2 Cell Li+/LiP Battery Pack for Portable Devices S1 MICRO FOOT Bump Side View Backside View G1 S2 5 4 S2 1.8 kΩ Pin 1 Identifier S1 6 3 1 2 8904E xxx G2 G1 1.8 kΩ G2 Device Marking: 8904E = P/N Code xxx = Date/Lot Traceability Code Ordering Information: Si8904EDB-T2-E1 (Lead (Pb)-free) S1 N-Channel S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Source1- Source2 Voltage Gate-Source Voltage Continuous Source1- Source2 Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Package Reflow VGS ± 12 IS1S2 PD Unit V 4.9 3.8 3.5 2.7 A 25 1.7 1 0.8 0.5 TJ, Tstg Operating Junction and Storage Temperature Range Conditionsc Steady State 30 ISM Pulsed Source1- Source2 Current Maximum Power Dissipationa 5s VS1S2 - 55 to 150 IR/Convection W °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta Maximum Junction-to-Foot b t≤5s Steady State Steady State RthJA RthJF Typical Maximum 60 75 95 120 18 22 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. The foot is defined as the top surface of the package. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. Document Number: 72948 S-82119-Rev. C, 08-Sep-08 www.vishay.com 1 Si8904EDB Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VSS = VGS, ID = 250 µA 0.6 Typ. Max. Unit Static VGS(th) Gate Threshold Voltage 1.6 V VSS = 0 V, VGS = ± 4.5 V ±4 µA VSS = 0 V, VGS = ± 12 V ± 10 mA VSS = 30 V, VGS = 0 V 1 VSS = 30 V, VGS = 0 V, TJ = 85 °C 5 IGSS Gate-Body Leakage Zero Gate Voltage Source Current IS1S2 On-State Source Currenta IS(on) VSS = 5 V, VGS = 4.5 V Source1- Source2 On-State Resistancea RS1S2(on) Forward Transconductancea gfs µA 5 A VGS = 4.5 V, ISS = 1 A 0.037 0.045 VGS = 2.5 V, ISS = 1 A 0.048 0.060 VSS = 10 V, ISS = 1 A 12 Ω S b Dynamic td(on) Turn-On Delay Time VSS = 10 V, RL = 10 Ω ISS ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 1.6 2.4 2 3 1.5 2.3 3.7 5.6 µs Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 100 000 10 000 I GSS - Gate Current (µA) I GSS - Gate Current (mA) IGSS at 25 °C (mA) 8 6 4 1000 100 TJ = 150 °C 10 1 TJ = 25 °C 2 0.1 0 0.01 0 www.vishay.com 2 3 6 9 12 15 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 15 Document Number: 72948 S-82119-Rev. C, 08-Sep-08 Si8904EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 VGS = 5 thru 2.5 V 8 ID - Drain Current (A) ID - Drain Current (A) 8 6 2V 4 2 6 4 TC = 125 °C 2 25 °C - 55 °C 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.4 VDS - Drain-to-Source Voltage (V) 1.6 2.0 2.4 Transfer Characteristics 0.10 1.6 VGS = 4.5 V IS1S2 = 1 A 0.08 RDS(on) - On-Resistance (Normalized) 1.4 0.06 VGS = 2.5 V VGS = 4.5 V RDS(on) - 1.2 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.04 0.02 1.2 1.0 0.8 0.00 0 2 4 6 8 0.6 - 50 10 - 25 0 25 50 75 100 125 ID - Drain Current (A) TJ - Junction Temperature (°C) On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 0.10 150 0.4 0.08 0.2 IS1S2 = 250 µA IS1S2 = 5 A IS1S2 = 1 A V GS(th) Variance (V) RDS(on) - On-Resistance (Ω) 0.8 0.06 0.04 0.02 0.0 - 0.2 - 0.4 0.00 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 72948 S-82119-Rev. C, 08-Sep-08 5 - 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Threshold Voltage www.vishay.com 3 Si8904EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 30 Limited by RDS(on)* ID - Drain Current (A) 25 Power (W) 20 15 10 TA = 25 °C Single Pulse 10 µs, 100 µs 1 ms 1 10 ms 100 ms 1 s, 10 s 0.1 TA = 25 °C Single Pulse DC, 100 s 5 0 0.01 0.1 1 100 10 1000 0.01 0.1 Time (s) Single Pulse Power, Junction-to-Ambient 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 95 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Foot www.vishay.com 4 Document Number: 72948 S-82119-Rev. C, 08-Sep-08 Si8904EDB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 6-BUMP (2 x 3, 0.8 mm PITCH) 6 x 0.30 ∼ 0.31 Note 3 Solder Mask - 0.4 Note 2 A2 A A1 e b Diameter Bump Note 1 e e Recommended Land 8904E XXX e D s Mark on Backside of Die s e e E Notes (Unless Otherwise Specified): 1. 6 solder bumps are 95.5/3.8/0.7 Sn/Ag/Cu. 2. Backside surface is coated with a Ag/Ni/Ti layer. 3. Non-solder mask defined copper landing pad. 4. Laser marks on the silicon die back. Dim. A Millimetersa Inches Min. Max. Min. Max. 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.102 0.114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 1.520 1.600 0.0598 0.0630 E 2.320 2.400 0.0913 0.0945 e 0.750 0.850 0.0295 0.0335 s 0.380 0.400 0.0150 0.0157 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72948. Document Number: 72948 S-82119-Rev. C, 08-Sep-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000