DG3015 Datasheet

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DG3015
Vishay Siliconix
Low-Voltage, Low RON, Dual DPDT Analog Switch
DESCRIPTION
The DG3015 is a dual double-pole/double-throw monolithic
CMOS analog switch designed for high performance
switching of analog signals. Combining low power, high
speed, low on-resistance and small physical size, the
DG3015 is ideal for portable and battery powered
applications requiring high performance and efficient use of
board space.
The DG3015 is built on Vishay Siliconix’s low voltage JI2
process. An epitaxial layer prevents latchup. Break-beforemake is guaranteed.
The switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FEATURES
• Low Voltage Operation (2.7 V to 3.3 V)
• Low On-Resistance - RON: 0.8 Ω
• 3 dB Loss at 100 MHz
• Fast Switching: tON = 40 ns
tOFF = 35 ns
• MICRO FOOT® Package
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
•
•
•
•
•
Reduced Power Consumption
High Accuracy
Reduce Board Space
TTL/1.8 V Logic Compatible
High Bandwidth
APPLICATIONS
•
•
•
•
•
Cellular Phones
Speaker Headset Switching
Audio and Video Signal Routing
PCMCIA Cards
Battery Operated Systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
A1 Locator
DG3015
MICRO FOOT 16-Bump
XXX
3015
V+
INA
NO1
Device Marking: 3015
xxx = Data/Lot Traceabillity Code
COM1
NC1
1
NO2
2
3
4
COM2
NC2
NO3
A
NC3
COM3
COM2
NC2
B
NO3
GND
INA
NO2
C
NO4
INB
V+
NO1
D
NC4
COM4
COM1
NC1
TRUTH TABLE
Logic
NC1, 2, 3 and 4
NO1, 2, 3 and 4
0
ON
OFF
1
OFF
ON
COM3
NC3
NO4
COM4
NC4
INB
GND
ORDERING INFORMATION
Temp Range
Package
Part Number
- 40 °C to 85 °C
MICRO FOOT: 16 Bump
(4 x 4, 0.5 mm Pitch,
238 µm Bump Height)
DG3015DB-T2-E1
Top View
Document Number: 72962
S-70853-Rev. C, 30-Apr-07
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DG3015
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Limit
Reference V+ to GND
Unit
- 0.3 to + 6
IN, COM, NC, NOa
V
- 0.3 to (V+ + 0.3 V)
Current (Any terminal except NO, NC or COM)
30
Continuous Current (NO, NC or COM)
± 150
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 250
Storage Temperature
(D Suffix)
Package Solder Reflow Conditionsb
IR/Convection
250
Power Dissipation (Packages)c
MICRO FOOT: 16 Bump (4 x 4 mm)d
719
mA
- 65 to 150
°C
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. Refer to IPC/JEDEC (J-STD-020B)
c. All bumps welded or soldered to PC Board.
d. Derate 9 mW/°C above 70 °C.
Permanent damage to the device may occur when the ”Absolute Maximum Ratings” are exceeded. These stress ratings do not indicate conditions for which the device
is intended to be functional. Functionality is only guaranteed to the conditions specified by the parametric table within the document.
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Symbol
Analog Signal Ranged
On-Resistance
RON Flatness
RON Match
Switch Off Leakage Current
VNO, VNC,
VCOM
Temp.a
Min.b
Full
0
Typ.c
RON
V+ = 2.7 V, VCOM = 0.2 V/1.5 V
INO, INC = 100 mA
Room
Full
0.80
RON
Flatness
ΔRON
V+ = 2.7 V, VCOM = 0 to V+,
INO, INC = 100 mA
Room
0.16
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Current
V+ = 3 V, ± 10 %,VIN = 0.4 V or 2 Ve
Limits
- 40 °C to 85 °C
ICOM(on)
V+ = 3.3 V,
VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Room
Max.b
Unit
V+
V
1.2
1.3
Ω
0.15
Room
Full
-2
- 20
2
20
Room
Full
Room
Full
-2
- 20
-2
- 20
2
20
2
20
Full
Full
Full
Full
2
nA
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
VINH
VINL
Cin
IINL or IINH
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
Charge Injection
Off-Isolationd
Crosstalkd
d
NO, NC Off Capacitanced
Channel-On
Capacitanced
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VIN = 0 or V+
VNO or VNC = 2 V, RL = 300 Ω, CL = 35 pF
td
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω
OIRR
XTALK
CNO(off)
CNC(off)
CNO(on)
CNC(on)
RL = 50 Ω, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
4
-1
Room
Full
Room
Full
Full
QINJ
0.4
Room
Room
Room
Room
Room
Room
Room
1
40
35
1
65
67
60
62
V
pF
µA
ns
3
7
- 67
- 70
63
67
200
196
pC
dB
pF
Document Number: 72962
S-70853-Rev. C, 30-Apr-07
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Product is End of Life
DG3015
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Parameter
Power Supply
Symbol
Power Supply Range
V+
Power Supply Current
I+
Limits
- 40 °C to 85 °C
V+ = 3 V, ± 10 %,VIN = 0.4 V or 2 Ve
Temp.a
VIN = 0 or V+
Full
Min.b
Typ.c
Max.b
2.7
Unit
3.3
V
1
µA
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.2
1.2
T = 25 °C
IS = 100 mA
NO Switch
1.0
RON - On-Resistance ()
R ON - On-Resistance ()
1.0
V+ = 3.0 V
IS = 100 mA
NO Switch
0.8
0.6
V+ = 2.7 V
V+ = 3.0 V
0.4
0.2
0.8
0.6
0.4
85 °C
25 °C
- 40 °C
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.0
3.0
0.5
VCOM - Analog Voltage (V)
RON vs. VCOM and SIngle Supply Voltage
1.5
2.0
2.5
3.0
RON vs. Analog Voltage and Temperature
100
10 mA
V+ = 3 V
VIN = 0 V
1 mA
I+ - Supply Current (A)
I+ - Supply Current (nA)
1.0
VCOM - Analog Voltage (V)
10
1
V+ = 3 V
100 µA
10 µA
1 µA
100 nA
10 nA
1 nA
0.1
- 60
100 pA
- 40
- 20
0
20
40
60
80
Temperature (°C)
Supply Current vs. Temperature
Document Number: 72962
S-70853-Rev. C, 30-Apr-07
100
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
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Product is End of Life
DG3015
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
800
1000
600
Leakage Current (pA)
Leakage Current (pA)
V+ = 3 V
100
10
INO(off), INC(off)
ICOM(off)
ICOM(on)
V+ = 3 V
400
200
0
- 200
INO(off), INC(off)
ICOM(off)
ICOM(on)
- 400
- 600
1
- 60
- 800
- 40
- 20
0
20
40
60
80
100
0.0
Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
VCOM, V NO, V NC - Analog Voltage (V)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
60
10
- 10
50
tON, V+ = 3.0 V
tOFF,V+ = 3.0 V
45
40
35
30
LOSS
OIRR
XTALK
- 30
- 50
V+ = 3 V
RL = 50
- 70
25
20
-60
- 90
-40
- 20
0
20
40
60
80
100
Temperature (°C)
10 M
Frequency (Hz)
Switching Time vs. Temperature
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
100 K
100
2.5
50
Q - Charge Injection (pC)
3.0
2.0
1.5
1.0
VT
- Switching Threshold (V)
Loss, OIRR, X TALK (dB)
t ON / t OFF - Switching Time (µs)
55
1M
100 M
1G
0
- 50
V+ = 3 V
- 100
- 150
0.5
0.0
0
1
2
3
4
5
6
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
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4
7
- 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCOM - Analog Voltage (V)
Charge Injection vs. Analog Voltage
Document Number: 72962
S-70853-Rev. C, 30-Apr-07
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Product is End of Life
DG3015
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
V+
NO or NC
Switch
Input
VINL
Switch Output
COM
tr < 5 ns
tf < 5 ns
50 %
VOUT
0.9 x V OUT
IN
Logic
Input
RL
300
GND
Switch
Output
CL
35 pF
0V
tOFF
tON
0V
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT = VCOM
RL
R L + R ON
Figure 1. Switching Time
V+
Logic
Input
V+
VNO
VNC
COM
NO
VINH
tr < 5 ns
tf < 5 ns
VINL
VO
NC
RL
300
IN
CL
35 pF
GND
VNC = V NO
VO
90 %
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen
VOUT
V+
COM
NC or NO
VOUT
VOUT
+
IN
IN
Vgen
CL = 1 nF
VIN = 0 - V+
On
Off
On
GND
Q=
VOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
Document Number: 72962
S-70853-Rev. C, 30-Apr-07
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Product is End of Life
DG3015
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
NC or NO
0 V, 2.4 V
IN
COM
COM
RL
Analyzer
GND
VCOM
Off Isolation = 20 log V
NO/ NC
Figure 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
HP4192A
Impedance
Analyzer
or Equivalent
GND
f = 1 MHz
Figure 5. Channel Off/On Capacitance
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Document Number: 72962
S-70853-Rev. C, 30-Apr-07
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Product is End of Life
DG3015
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 16 BUMP (4 x 4, 0.5 mm PITCH, 0.238 mm BUMP HEIGHT)
16 X Ø 0.150 ∼ 0.229
Note b
Solder Mask Ø ∼ Pad Diameter + 0.1
Silicon
A2
A
A1
0.5
Bump
Note a
3
4
2
1
b Diameter
0.5
A
Recommended Land Pattern
e
Index-Bump A1
Note c
B
e
E
C
XXX
3015
e
D
S
S
Top Side (Die Back)
e
e
e
D
Notes (Unless Otherwise Specified):
a. Bump is Lead (Pb)-free Sn/Ag/Cu.
b. Non-solder mask defined copper landing pad.
c. Laser Mark on silicon die back; back-lapped, no coating. Shown is not actual marking; sample only.
Dim.
Millimetersa
Min.
Max.
Inches
Min.
Max.
A
0.688
0.753
0.0271
0.0296
A1
0.218
0.258
0.0086
0.0102
A2
0.470
0.495
0.0185
0.0195
b
0.306
0.346
0.0120
0.0136
D
1.980
2.020
0.0780
0.0795
E
1.980
2.020
0.0780
0.0795
e
S
0.5 BASIC
0.230
0.270
0.0197 BASIC
0.0091
0.0106
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72962.
Document Number: 72962
S-70853-Rev. C, 30-Apr-07
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
MICRO FOOT: 16-BUMP (4 mm x 4 mm, 0.5 mm PITCH, 0.238 mm BUMP HEIGHT)
6 X Ø 0.150 ~ 0.229
Note b
Solder Mask Ø ~ Pad Diameter + 0.1
Silicon
A2
A
A1
0.5
Bump
Note a
4
3
2
1
b Diameter
0.5
A
Recommended Land Pattern
e
Index-Bump A1
Note c
B
e
E
C
XXX
3408
e
D
S
Top Side (Die Back)
S
e
e
e
D
Notes
(unless otherwise specified)
a. Bump is lead (Pb)-free Sn/Ag/Cu.
b. Non-solder mask defined copper landing pad.
c. Laser mark on silicon die back; back-lapped, no coating. Shown is not actual marking; sample only.
DIM.
MILLIMETERSa
INCHES
MIN.
MAX.
MIN.
MAX.
A
0.688
0.753
0.0271
0.0296
A1
0.218
0.258
0.0086
0.0102
A2
0.470
0.495
0.0185
0.0195
b
0.306
0.346
0.0120
0.0136
D
1.980
2.020
0.0780
0.0795
E
1.980
2.020
0.0780
0.0795
0.270
0.0091
e
S
0.5 BASIC
0.230
0.0197 BASIC
0.0106
Note
a. Use millimeters as the primary measurement.
ECN: S11-1065-Rev. A, 13-Jun-11
DWG: 6000
Document Number: 63273
Revision: 13-Jun-11
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
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Document Number: 91000