Data Sheet

BUK9E06-55B
N-channel TrenchMOS FET
Rev. 04 — 22 July 2009
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology. This product has been designed and qualified to the appropriate
AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
„ Q101 compliant
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ General purpose power switching
„ Automotive systems
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max
Unit
-
-
55
V
-
-
75
A
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
258
W
ID = 75 A; Vsup ≤ 55 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
-
-
679
mJ
VGS = 5 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 14; see Figure 15
-
22
-
nC
[1]
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
QGD
gate-drain charge
BUK9E06-55B
NXP Semiconductors
N-channel TrenchMOS FET
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VGS = 10 V; ID = 25 A;
Tj = 25 °C;
see Figure 11; see Figure 12
-
4.8
5.4
mΩ
VGS = 5 V; ID = 25 A;
Tj = 25 °C;
see Figure 11; see Figure 12
-
5.1
6
mΩ
Static characteristics
RDSon
[1]
drain-source
on-state resistance
Continuous current is limited by package.
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
1
G
gate
Simplified outline
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
D
mb
G
mbb076
S
1 2 3
SOT226
(I2PAK)
3. Ordering information
Table 3.
Ordering information
Type number
BUK9E06-55B
Package
Name
Description
Version
I2PAK
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
SOT226
BUK9E06-55B_4
Product data sheet
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Rev. 04 — 22 July 2009
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BUK9E06-55B
NXP Semiconductors
N-channel TrenchMOS FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
55
V
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS
gate-source voltage
ID
drain current
-
55
V
-15
15
V
Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3 [1]
-
146
A
Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3 [2]
-
75
A
Tmb = 100 °C; VGS = 5 V; see Figure 1
-
75
A
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
[2]
-
587
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
258
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Source-drain diode
source current
IS
peak source current
ISM
Tmb = 25 °C;
[1]
-
146
A
Tmb = 25 °C;
[2]
-
75
A
-
587
A
-
679
mJ
tp ≤ 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
non-repetitive
ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V;
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
EDS(AL)S
[1]
Current is limited by power dissipation chip rating.
[2]
Continuous current is limited by package.
03nh85
150
03aa16
120
ID
(A)
Pder
(%)
80
100
Capped at 75 A due to package
50
40
0
0
0
Fig 1.
50
100
150
Tmb ( °C)
200
0
100
150
200
Tmb (°C)
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK9E06-55B_4
Product data sheet
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© NXP B.V. 2009. All rights reserved.
Rev. 04 — 22 July 2009
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BUK9E06-55B
NXP Semiconductors
N-channel TrenchMOS FET
03nh83
103
tp = 10 μ s
Limit RDSon = VDS / ID
ID
(A)
102
100 μ s
Capped at 75 A due to package
1 ms
DC
10
10 ms
100 ms
1
10-1
Fig 3.
1
10
102
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9E06-55B_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 22 July 2009
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NXP Semiconductors
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Rth(j-a)
Conditions
Min
Typ
Max
Unit
thermal resistance from see Figure 4
junction to mounting
base
-
-
0.58
K/W
thermal resistance from vertical in free air
junction to ambient
-
60
-
K/W
03nh84
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
δ=
P
10-2
single shot
tp
T
t
tp
T
10-3
10-6
Fig 4.
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9E06-55B_4
Product data sheet
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Rev. 04 — 22 July 2009
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BUK9E06-55B
NXP Semiconductors
N-channel TrenchMOS FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
50
-
-
V
ID = 250 µA; VGS = 0 V; Tj = 25 °C
55
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9; see Figure 10
-
-
2.3
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
1.1
1.5
2
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9; see Figure 10
0.5
-
-
V
VDS = 55 V; VGS = 0 V; Tj = 25 °C
-
0.02
1
µA
VDS = 55 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VDS = 0 V; VGS = 15 V; Tj = 25 °C
-
2
100
nA
VDS = 0 V; VGS = -15 V; Tj = 25 °C
-
2
100
nA
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
-
-
6.4
mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
-
4.8
5.4
mΩ
VGS = 5 V; ID = 25 A; Tj = 175 °C;
see Figure 11; see Figure 12
-
-
12
mΩ
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
-
5.1
6
mΩ
ID = 25 A; VDS = 44 V; VGS = 5 V;
Tj = 25 °C; see Figure 14; see Figure 15
-
60
-
nC
-
11
-
nC
-
22
-
nC
Static characteristics
V(BR)DSS
VGS(th)
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 44 V; Tj = 25 °C;
see Figure 14; see Figure 15
-
2.4
-
V
Ciss
input capacitance
-
5674
7565
pF
Coss
output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
-
755
906
pF
Crss
reverse transfer
capacitance
-
255
350
pF
td(on)
turn-on delay time
-
37
-
ns
tr
rise time
-
95
-
ns
td(off)
turn-off delay time
-
117
-
ns
tf
fall time
-
106
-
ns
LD
internal drain
inductance
from drain lead 6 mm from package to
center of die; Tj = 25 °C
-
4.5
-
nH
from upper edge of drain mounting base to
center of die; Tj = 25 °C
-
2.5
-
nH
from source lead to source bonding pad;
Tj = 25 °C
-
7.5
-
nH
LS
internal source
inductance
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
BUK9E06-55B_4
Product data sheet
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Rev. 04 — 22 July 2009
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BUK9E06-55B
NXP Semiconductors
N-channel TrenchMOS FET
Table 6.
Characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
-
0.85
1.2
V
trr
reverse recovery time
-
64
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V; Tj = 25 °C
-
79
-
nC
03nj65
350
ID
10
(A)
300 6
5
3.8
14
RDSon
(mΩ)
12
3.6
10
4.2
VGS (V) is
4
250
200
3.4
150
3.2
100
3
03nj66
3
3.2
VGS (V) is
3.4
4
8
5
10
6
2.8
4
50
2.6
2.4
2
0
0
Fig 5.
2
4
6
8
VDS (V)
Output characteristics: drain current as a
function of drain-source voltage; typical values
03nj62
200
0
10
Fig 6.
100
200
300 I (A) 400
D
Drain-source on-state resistance as a function
of drain current; typical values
03nj63
100
ID
(A)
gfs
(S)
150
75
100
50
50
25
Tj = 175 °C
Tj = 25 °C
0
0
0
Fig 7.
20
40
60
I D (A)
80
Forward transconductance as a function of
drain current; typical values
0
Fig 8.
2
VGS (V)
3
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK9E06-55B_4
Product data sheet
1
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 22 July 2009
7 of 13
BUK9E06-55B
NXP Semiconductors
N-channel TrenchMOS FET
03ng52
2.5
03ng53
10−1
ID
(A)
VGS(th)
(V)
2.0
10−2
max
min
1.5
typ
10−5
0.5
0
−60
Fig 9.
max
10−4
min
1.0
typ
10−3
10−6
0
60
120
180
0
1
2
Tj (°C)
Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
03nj64
7
3
VGS (V)
03ne89
2
a
RDSon
(mΩ)
1.5
6
1
5
0.5
4
3
7
11
VGS (V)
15
Fig 11. Drain-source on-state resistance as a function
of gate-source voltage; typical values
0
-60
60
120
Tj (°C)
180
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK9E06-55B_4
Product data sheet
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© NXP B.V. 2009. All rights reserved.
Rev. 04 — 22 July 2009
8 of 13
BUK9E06-55B
NXP Semiconductors
N-channel TrenchMOS FET
03nj60
100
03nj61
5
VGS
(V)
IS
(A)
4
75
VDD = 14 V
3
VDD = 44 V
50
2
Tj = 175 °C
25
1
Tj = 25 °C
0
0.0
0
0.2
0.4
0.6
0.8
0
1.0
VSD (V)
Fig 13. Source current as a function of source-drain
voltage; typical values
20
40
60
QG (nC)
Fig 14. Gate-source voltage as a function of gate
charge; typical values
03nj67
8000
VDS
C
(pF)
ID
Ciss
6000
VGS(pl)
VGS(th)
4000
Coss
VGS
QGS1
QGS2
QGS
2000
QGD
QG(tot)
Crss
003aaa508
Fig 15. Gate charge waveform definitions
0
10-1
1
10
VDS (V)
102
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK9E06-55B_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 22 July 2009
9 of 13
BUK9E06-55B
NXP Semiconductors
N-channel TrenchMOS FET
7. Package outline
Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
SOT226
A
A1
E
D1
mounting
base
D
L1
Q
b1
L
1
2
3
c
b
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
max
D1
E
e
L
L1
Q
mm
4.5
4.1
1.40
1.27
0.85
0.60
1.3
1.0
0.7
0.4
11
1.6
1.2
10.3
9.7
2.54
15.0
13.5
3.30
2.79
2.6
2.2
OUTLINE
VERSION
SOT226
REFERENCES
IEC
JEDEC
JEITA
low-profile
3-lead TO-220AB
EUROPEAN
PROJECTION
ISSUE DATE
05-06-23
06-02-14
Fig 17. Package outline SOT226 (I2PAK)
BUK9E06-55B_4
Product data sheet
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Rev. 04 — 22 July 2009
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BUK9E06-55B
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N-channel TrenchMOS FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK9E06-55B_4
20090722
Product data sheet
-
BUK9E06-55B_1
-
BUK95_96_9E06_55B_3
Modifications:
BUK9E06-55B_1
Modifications:
BUK95_96_9E06_55B_3
(9397 750 13519)
•
Various changes to content.
20090715
Product data sheet
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9E06-55B separated from data sheet BUK95_96_9E06_55B_3.
20041130
Product data sheet
-
BUK95_96_9E06_55B-02
BUK95_96_9E06_55B-02 20021010
(9397 750 10474)
Product data sheet
-
BUK95_96_9E06_55B-01
BUK95_96_9E06_55B-01 20020813
(9397 750 09946)
Product data sheet
-
-
BUK9E06-55B_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 22 July 2009
11 of 13
BUK9E06-55B
NXP Semiconductors
N-channel TrenchMOS FET
9. Legal information
9.1
Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BUK9E06-55B_4
Product data sheet
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Rev. 04 — 22 July 2009
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NXP Semiconductors
N-channel TrenchMOS FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 22 July 2009
Document identifier: BUK9E06-55B_4
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