Datasheet

UNISONIC TECHNOLOGIES CO., LTD
15N65
Power MOSFET
15A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 15N65 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar
stripe and DMOS technology. This technology is specialized in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC 15N65 is universally applied in active power factor
correction and high efficient switched mode power supplies.

FEATURES
* RDS(ON) < 0.65Ω @ VGS=10V, ID=7.5A
* High switching speed
* Improved dv/dt capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15N65L-T47-T
15N65G-T47-T
15N65L-TA3-T
15N65G-TA3-T
15N65L-TC3-T
15N65G-TC3-T
15N65L-TF2-T
15N65G-TF2-T
15N65L-TF3-T
15N65G-TF3-T
15N65L-TQ2-T
15N65G-TQ2-T
15N65L-TQ2-R
15N65G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-247
TO-220
TO-230
TO-220F2
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
1 of 7
QW-R502-481.H
15N65

Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-481.H
15N65

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
650
V
Gate to Source Voltage
VGSS
±30
V
Continuous
ID
15
A
Continuous Drain Current
Pulsed (Note 2)
IDM
60
A
Avalanche Current (Note 2)
IAR
6.4
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
205
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.45
V/ns
TO-220/TO-230
250
W
TO-263
Power Dissipation
TO-220F
PD
54
W
TO-220F2
52
W
TO-247
312
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=6.4A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C.

THERMAL DATA
PARAMETER
TO-220/TO-220F2
TO-220F/TO-230
Junction to Ambient
TO-263
TO-247
TO-220/TO-230
TO-263
Junction to Case
TO-220F
TO-220F2
TO-247
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
UNIT
62.5
°C/W
40
°C/W
0.5
°C/W
2.3
2.4
0.4
°C/W
°C/W
°C/W
3 of 7
QW-R502-481.H
15N65

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS=0V, ID=250µA
VDS=650V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=7.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V,VGS=0V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate-Source Charge
QGS
IG = 100mA (Note 1, 2)
Gate-Drain Charge
QGD
Turn-ON Delay Time (Note 1)
tD(ON)
VDD =30V, VGS=10V, ID =0.5A,
Turn-ON Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS =15A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
trr
IS =15A, VGS=0V,
dIF/dt=100A/μs
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
650
2.0
1
+100
-100
V
µA
nA
nA
4.0
0.65
V
Ω
2600
260
22
pF
pF
pF
155
14
28
105
115
600
120
nC
nC
nC
ns
ns
ns
ns
15
60
1.4
510
8.2
A
A
V
ns
μC
4 of 7
QW-R502-481.H
15N65

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R502-481.H
15N65

Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
BVDSS
BVDSS-VDD
BVDSS
IAS
ID(t)
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
6 of 7
QW-R502-481.H
15N65
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)

200
150
100
50
200
150
100
50
0
0
0
0.6
1.8 2.4
1.2
3.0 3.6
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Body-Diode Continuous Current, IS (A)
400
0
200
600
800 1000
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R502-481.H