Datasheet

UNISONIC TECHNOLOGIES CO., LTD
1N50
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL
POWER MOSFET
1
TO-220

DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 1N50 is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.

1
1
TO-220F1
TO-92
FEATURES
* R DS(ON) =6.0Ω @ V GS =10V
* High Switching Speed
* 100% Avalanche Tested

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
1N50L-TA3-T
1N50G-TA3-T
1N50L-TF1-T
1N50G-TF1-T
1N50L-92-B
1N50G-T92-B
1N50L-92-K
1N50G-T92-K
Pin Assignment: G: Gate
D: Drain
S: Source
1N50L-TA3-T
Package
TO-220
TO-220F1
TO-92
TO-92
1
G
G
G
G
Pin Assignment
2
3
D
S
D
S
D
S
D
S
Packing
Tube
Tube
Tape Box
Bulk
(1)Packing Type
(1) T: Tube, B: Tape Box, K: Bulk
(2)Package Type
(2) TA3: TO-220, TF1: TO-220F1, T92: TO-92
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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1N50

Preliminary
Power MOSFET
MARKING
TO-220 / TO-220F1
UTC
1N50
Lot Code
L: Lead Free
G: Halogen Free
Data Code
1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TO-92
UTC
1N50
1
L: Lead Free
G: Halogen Free
Data Code
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (T C =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V DSS
500
V
Gate-Source Voltage
V GSS
±30
V
Continuous (T C =25°C)
ID
1.3 (Note 2)
A
Drain Current
Pulsed (Note 3)
I DM
5 (Note 2)
A
Avalanche Current (Note 3)
I AR
1.3
A
Single Pulsed (Note 4)
E AS
113
mJ
Avalanche Energy
Repetitive (Note 5)
E AR
2.6
mJ
TO-220
40
W
Power Dissipation
TO-220F1
20
W
TO-92
1.56
W
PD
TO-220
0.32
W/°C
Derate above 25°C
TO-220F1
0.16
W/°C
TO-92
0.0125
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
T STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 120mH, I AS = 1.3A, V DD = 50V, R G = 27Ω, Starting T J = 25°C
5. I SD ≤ 1.5A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F1
Junction to Ambient
TO-92
TO-220
Junction to Case
TO-220F1
TO-92
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θ JA
θ JC
RATINGS
62.5
140
3.13
6.24
80
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (T C =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
I D =250µA, V GS =0V
Drain-Source Leakage Current
I DSS
V DS =500V, V GS =0V
Forward
V GS =+30V, V DS =0V
Gate- Source Leakage Current
I GSS
Reverse
V GS =-30V, V DS =0V
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(TH)
V DS =V GS , I D =250µA
Static Drain-Source On-State Resistance
R DS(ON)
V GS =10V, I D =0.65A
DYNAMIC PARAMETERS
Input Capacitance
C ISS
Output Capacitance
C OSS
V GS =0V, V DS =25V, f=1.0MHz
Reverse Transfer Capacitance
C RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t D(ON)
Rise Time
tR
V DD =30V, I D =0.5A, R G =25Ω
(Note 1, 2)
Turn-OFF Delay Time
t D(OFF)
Fall-Time
tF
Total Gate Charge
QG
V GS =10V, V DS =50V, I D =1.3A
Gate to Source Charge
Q GS
(Note 1, 2)
Gate to Drain Charge
Q GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
I SM
Drain-Source Diode Forward Voltage
V SD
I S =1.3A, V GS =0V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
500
V
1
µA
+100 nA
-100 nA
2.0
4.3
4.0
6.0
V
Ω
220
30
11
290
35
13
pF
pF
pF
44
31
58
22
11
3.64
2
50
35
90
40
16
ns
ns
ns
ns
nC
nC
nC
1.3
5
1.15
A
A
V
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1N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS

VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
VDD
RG
90%
RD
VDS
VGS
10V
VDS
10%
VGS
DUT
td(ON)
tR
td(OFF) tF
tON
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
tOFF
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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1N50

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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1N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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