Data Sheet

BUK9Y19-55B
N-channel TrenchMOS logic level FET
Rev. 03 — 29 February 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features
„ 175 °C rated
„ Q101 compliant
„ Logic level compatible
„ Very low on-state resistance
1.3 Applications
„ 12 V and 24 V loads
„ General purpose power switching
„ Automotive systems
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Quick reference
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1 and 4
-
-
46
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
-
85
W
VGS = 5 V; ID = 20 A;
Tj = 25 °C; see Figure 12 and
13
-
16.3
19
mΩ
ID = 46 A; Vsup ≤ 55 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
-
-
80
mJ
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
BUK9Y19-55B
NXP Semiconductors
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pinning
Pin
Symbol
Description
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base;
connected to drain
Simplified outline
Graphic symbol
D
mb
G
mbb076
S
1 2 3 4
SOT669 (LFPAK)
3. Ordering information
Table 3.
Ordering information
Type number
BUK9Y19-55B
Package
Name
Description
Version
LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
55
V
VDGR
drain-gate voltage
RGS = 20 kΩ
-
55
V
VGS
gate-source voltage
-15
15
V
ID
drain current
Tmb = 25 °C; VGS = 5 V; see Figure 1 and 4
-
46
A
Tmb = 100 °C; VGS = 5 V; see Figure 1
-
32
A
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4
-
184
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
85
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
-
80
mJ
-
-
J
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy
ID = 46 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
EDS(AL)R repetitive drain-source
avalanche energy
see Figure 3
[1][2]
[3]
Source-drain diode
IS
source current
Tmb = 25 °C
-
46
A
ISM
peak source current
tp ≤ 10 μs; pulsed; Tmb = 25 °C
-
184
A
[1]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2]
Repetitive avalanche rating limited by average junction temperature of 170 °C.
[3]
Refer to application note AN10273 for further information.
BUK9Y19-55B_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 29 February 2008
2 of 12
BUK9Y19-55B
NXP Semiconductors
N-channel TrenchMOS logic level FET
03nl99
50
ID
(A)
03na19
120
Pder
(%)
40
80
30
20
40
10
0
0
0
50
100
150
Tmb (°C)
0
200
50
100
150
200
Tmb (°C)
VGS • 5V
P der =
Fig 1. Continuous drain current as a function of
mounting base temperature
P tot
P tot (25°C )
× 100 %
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03np79
102
IAL
(A)
(1)
10
(2)
(3)
1
10-1
10-3
10-2
10-1
1 t (ms) 10
AL
(1) Singleípulse;T j = 25 °C.
(2) Singleípulse;T j = 150 °C.
(3) Repetitive.
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
BUK9Y19-55B_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 29 February 2008
3 of 12
BUK9Y19-55B
NXP Semiconductors
N-channel TrenchMOS logic level FET
03nm00
103
ID
(A)
Limit RDSon = VDS / ID
10
tp = 10 μs
2
100 μs
10
1 ms
10 ms
1
100 ms
DC
10-1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is single pulse
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
see Figure 5
-
-
1.8
K/W
03nm01
10
Zth (j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10-1
δ=
P
0.05
tp
T
0.02
t
tp
10-2
10-6
T
single shot
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9Y19-55B_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 29 February 2008
4 of 12
BUK9Y19-55B
NXP Semiconductors
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ID = 0.25 mA; VGS = 0 V;
Tj = 25 °C
55
-
-
V
ID = 0.25 mA; VGS = 0 V;
Tj = -55 °C
50
-
-
V
-
-
2.3
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11
1.1
1.5
2
V
ID = 1 mA; VDS = VGS;
Tj = 175 °C; see Figure 11
0.5
-
-
V
μA
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold ID = 1 mA; VDS = VGS;
voltage
Tj = -55 °C; see Figure 11
IDSS
drain leakage current
VDS = 55 V; VGS = 0 V;
Tj = 175 °C
-
-
500
VDS = 55 V; VGS = 0 V; Tj = 25 °C
-
0.02
1
μA
IGSS
gate leakage current
VDS = 0 V; VGS = 15 V; Tj = 25 °C
-
2
100
nA
VDS = 0 V; VGS = -15 V;
Tj = 25 °C
-
2
100
nA
VGS = 4.5 V; ID = 20 A; Tj = 25 °C
-
-
21
mΩ
VGS = 10 V; ID = 20 A; Tj = 25 °C
-
14.3
17.3
mΩ
VGS = 5 V; ID = 20 A; Tj = 25 °C;
see Figure 12 and 13
-
16.3
19
mΩ
VGS = 5 V; ID = 20 A; Tj = 175 °C;
see Figure 12 and 13
-
-
40
mΩ
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
-
0.85
1.2
V
-
52
-
ns
-
38
-
nC
-
18
-
nC
-
5
-
nC
-
8
-
nC
RDSon
drain-source on-state
resistance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/μs;
VGS = -10 V; VDS = 30 V;
recovered charge
Tj = 25 °C
Qr
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
ID = 25 A; VDS = 44 V; VGS = 5 V;
Tj = 25 °C; see Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Tj = 25 °C;
see Figure 15
VDS = 30 V; RL = 1.2 Ω;
VGS = 5 V; RG(ext) = 10 Ω;
Tj = 25 °C
BUK9Y19-55B_3
Product data sheet
-
1494
1992
pF
-
217
260
pF
-
86
118
pF
-
18
-
ns
-
180
-
ns
-
44
-
ns
-
134
-
ns
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 29 February 2008
5 of 12
BUK9Y19-55B
NXP Semiconductors
N-channel TrenchMOS logic level FET
03np29
120
VGS (V) = 10
RDSon
(mΩ)
6.0
5.0
4.6
4.4
4.2
ID
(A)
80
03np28
30
25
4.0
20
3.8
3.6
40
3.4
15
3.2
3.0
2.8
2.6
0
0
2
4
6
8
10
10
VDS (V)
3
7
11
15
VGS (V)
T j = 25 °C; t p = 300 ȝs
T j = 25 °C; ID = 20 A
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
03ng53
10−1
ID
(A)
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
03np15
40
gfs
(S)
10−2
min
typ
30
max
10−3
10−4
20
10−5
10−6
10
0
1
2
3
5
10
15
T j = 25 °C;VDS = VGS
25
30
T j = 25 °C;VDS = 25V
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
Fig 9. Forward transconductance as a function of
drain current; typical values
BUK9Y19-55B_3
Product data sheet
20
ID (A)
VGS (V)
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 29 February 2008
6 of 12
BUK9Y19-55B
NXP Semiconductors
N-channel TrenchMOS logic level FET
03np27
60
03ng52
2.5
VGS(th)
(V)
ID
(A)
2.0
max
40
1.5
typ
min
1.0
20
25 °C
TT
j =175
j=
Tj = 25 °C
0.5
0
−60
0
0
1
2
3
4
VGS (V)
VDS = 25V
60
120
180
Tj (°C)
ID = 1 m A;VDS = VGS
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature
03np30
44
RDSon
(mΩ)
0
3.2 3.4 3.6 3.8 4.0
03nb25
2.4
a
5.0
36
1.6
28
0.8
VGS (V) = 10
20
12
0
40
80
120
ID (A)
T j = 25 °C
0
−60
a=
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
60
120
180
Tj (°C)
R DSon
R DSon (25°C )
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK9Y19-55B_3
Product data sheet
0
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 29 February 2008
7 of 12
BUK9Y19-55B
NXP Semiconductors
N-channel TrenchMOS logic level FET
03np14
5
VGS
(V)
03np31
2400
C
(pF)
VDS = 14 V
4
1800
Ciss
VDS = 44 V
3
1200
2
Coss
600
1
Crss
0
0
5
10
15
0
10−1
20
1
QG (nC)
102
10
VDS (V)
T j = 25 °C; ID = 25 A
VGS = 0V ; f = 1 M H z
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03np13
100
IS
(A)
80
60
Tj = 175 °C
40
Tj = 25 °C
20
0
0
0.3
0.6
0.9
1.2
VSD (V)
VGS = 0V
Fig 16. Source current as a function of source-drain voltage; typical values
BUK9Y19-55B_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 29 February 2008
8 of 12
BUK9Y19-55B
NXP Semiconductors
N-channel TrenchMOS logic level FET
7. Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads
A2
A
E
SOT669
C
c2
b2
E1
b3
L1
mounting
base
b4
D1
D
H
L2
1
2
3
e
4
w M A
b
1/2
X
c
e
A
(A 3)
A1
C
θ
L
detail X
y C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
A2
A3
b
b2
1.20 0.15 1.10
0.50 4.41
0.25
1.01 0.00 0.95
0.35 3.62
mm
b3
b4
2.2
2.0
0.9
0.7
c
D (1)
c2
D1(1)
E(1) E1(1)
max
0.25 0.30 4.10
4.20
0.19 0.24 3.80
5.0
4.8
3.3
3.1
e
H
L
L1
L2
w
y
θ
1.27
6.2
5.8
0.85
0.40
1.3
0.8
1.3
0.8
0.25
0.1
8°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT669
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-10-13
06-03-16
MO-235
Fig 17. Package outline SOT669 (LFPAK)
BUK9Y19-55B_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 29 February 2008
9 of 12
BUK9Y19-55B
NXP Semiconductors
N-channel TrenchMOS logic level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK9Y19-55B_3
20080229
Product data sheet
-
BUK9Y19-55B_2
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
BUK9Y19-55B_2
20060411
Product data sheet
-
BUK9Y19-55B-01
BUK9Y19-55B-01
(9397 750 13188)
20040528
Product data sheet
-
-
BUK9Y19-55B_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 29 February 2008
10 of 12
BUK9Y19-55B
NXP Semiconductors
N-channel TrenchMOS logic level FET
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BUK9Y19-55B_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 29 February 2008
11 of 12
BUK9Y19-55B
NXP Semiconductors
N-channel TrenchMOS logic level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 February 2008
Document identifier: BUK9Y19-55B_3
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