UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N50 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. FEATURES 1 1 SYMBOL TO-220F TO-220F1 * RDS(ON)=0.55Ω @ VGS=10V * Fast Switching * With 100% Avalanche Tested TO-220 1 2.Drain TO-262 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N50L-TA3-T 11N50G-TA3-T 11N50L-TF1-T 11N50G-TF1-T 11N50L-TF3-T 11N50G-TF3-T 11N50L-T2Q-T 11N50G-T2Q-T www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F TO-262 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube 1 of 6 QW-R502-462.d 11N50 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain to Source Voltage Gate to Source Voltage RATINGS UNIT 500 V ±30 V TC=25°C 11 (Note 2) A ID Continuous Drain Current TC=100°C 7 (Note 2) A Pulsed Drain Current (Note 3) IDM 44 (Note 2) A Single Pulsed Avalanche Energy(Note 4) EAS 670 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 4.5 V/ns TO-220 195 TO-220F1 40 TC=25°C W TO-220F 48 TO-262 195 Power Dissipation PD TO-220 1.56 0.32 Derate above TO-220F1 W/°C 25°C TO-220F 0.39 TO-262 1.56 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating : Pulse width limited by maximum junction temperature 4. L=10mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C 5. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA TO-220 TO-220F1 TO-220F TO-262 θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 0.64 3.1 2.58 0.64 UNIT °C/W °C/W 2 of 6 QW-R502-462.d 11N50 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C VDS=500V, VGS=0V Drain-Source Leakage Current IDSS VDS=500V, TJ=125°C Gate-Source Leakage Current IGSS VDS=0V ,VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS= VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.5A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V,VGS=0V,f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=400V, VGS=10V, ID=11A Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=250V, ID=11A, RG=3Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =11A, VGS=0V Body Diode Reverse Recovery Time trr VGS=0V, IS=11A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 0.5 2.0 V V/°C 10 µA 100 µA ±100 nA 4.0 0.48 0.55 V Ω 1515 2055 185 235 25 30 pF pF pF 43 8 19 24 70 120 75 nC nC nC ns ns ns ns 55 57 150 250 160 11 44 1.4 90 1.5 A A V ns μC 3 of 6 QW-R502-462.d 11N50 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-462.d 11N50 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-462.d 11N50 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-462.d