datasheet

SKUT 115/16T V2
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Ts = 25 °C
127
A
Ts = 85 °C
71
A
Tj = 25 °C
1500
A
Tj = 130 °C
1250
A
Tj = 25 °C
11250
A²s
Tj = 130 °C
7813
A²s
VRSM
1700
V
VRRM
1600
V
Chip
IT(AV)
ITSM
i2t
SEMIPONT® 5
Three phase antiparallel
thyristor module
sinus 180°
10 ms
10 ms
VDRM
(di/dt)cr
Tj = 130 °C
(dv/dt)cr
Tj = 130 °C
Tj
SKUT 115/16T V2
• Compact design
• Two screws mounting
• Heat ransfer and isolation through
direct copper board (Low Rth)
• Low resistance in steady-state and
high reliability
• High surge currents
• Glass passivated thyrsitor chips
• UL recognized, file no. E 63 532
• Integrated temperature sensor
Typical Applications*
• Soft starter
• Light control(e.g. studios, theaters)
• Temperature control (e.g. oven,
chemical processes)
Remarks
• IRMS=105A , for W3C application,
sin.180° and TS=85°C
V
50
A/µs
500
V/µs
-40 ... 125
°C
Module
Tstg
Visol
Features
1600
ac; 50Hz; r.m.s
-40 ... 125
°C
1 min
3000
V
1s
3600
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
V
Chip
VT
Tj = 25 °C, IT = 150 A
1.6
VT(TO)
Tj = 130 °C
0.9
V
rT
Tj = 130 °C
5
m
IDD;IRD
Tj = 130 °C, VRD=VRRM
20
mA
tgd
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs
1
µs
tgr
VD = 0.67 * VDRM
2
µs
tq
Tj = 130 °C
IH
Tj = 25 °C
IL
Tj = 25 °C, RG = 33 
VGT
Tj = 25 °C, d.c.
3
V
IGT
Tj = 25 °C, d.c.
150
mA
VGD
Tj = 130 °C, d.c.
IGD
Tj = 115 °C, d.c.
Rth(j-s)
Rth(j-s)
Rth(j-s)
Rth(j-s)
Rth(j-s)
Rth(j-s)
continuous DC
sin. 180°
rec. 120°
150
µs
200
mA
600
mA
0.25
6
V
mA
per thyristor
K/W
per module
K/W
per thyristor
K/W
per module
0.32
K/W
per thyristor
K/W
per module
K/W
Module
K/W
Rth(c-s)
K/W
Ms
to heatsink
2.25
2.5
Mt
Nm
Nm
a
m/s²
w
75
g
1670

3550 ±
2%
K
Temperature Sensor
R100
B100/125
UT-T
© by SEMIKRON
Tr = 100 °C, tolerance = 3 %
R(T)=1000[1+A(T-25°C)+B(T-25°C)2
], A = 7.635*10-3 °C-1,
B = 1.731*10-5 °C-2
Rev. 0 – 05.04.2013
1
SKUT 115/16T V2
Fig. 2: Power dissipation per thyristor vs r.m.s. current
Fig. 6: Transient thermal impedance Zth(j-s)
Fig. 8: On state characteristics
Fig. 9: Surge overload current vs. time
Fig. 10: Gate trigger characteristic
Fig.11: Temperature sensor characteristic
2
Rev. 0 – 05.04.2013
© by SEMIKRON
SKUT 115/16T V2
UT-T
SEMIPONT 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 0 – 05.04.2013
3
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