Datasheet

UNISONIC TECHNOLOGIES CO., LTD
3N60Z
Power MOSFET
3A, 600V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
1
The UTC 3N60Z is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
„
TO-220F
FEATURES
* RDS(ON) = 3.6Ω @VGS = 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N60ZL-TF3-T
3N60ZG-TF3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-220F
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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3N60Z
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
3.0
A
Continuous Drain Current
ID
3.0
A
Pulsed Drain Current (Note 2)
IDM
12
A
200
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
34
W
Junction Temperature
TJ
+150
℃
Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATING
62.5
3.68
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
600
VDS = 600V, VGS = 0V
Forward
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
/△T
△
BV
Breakdown Voltage Temperature Coefficient
DSS
J ID=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
UNISONIC TECHNOLOGIES CO., LTD
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10
100
-100
V
μA
nA
nA
V/℃
2.8
4.0
3.6
V
Ω
350
50
5.5
450
65
7.5
pF
pF
pF
0.6
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Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD = 300V, ID = 3.0A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS= 480V, ID= 3.0A,
Gate-Source Charge
QGS
VGS= 10V (Note 1, 2)
Gate-Drain Charge
QDD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 3.0A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0V, IS = 3.0A,
dI
Reverse Recovery Charge
QRR
F/dt = 100 A/μs (Note 1)
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
10
30
20
30
10
2.7
4.9
210
1.2
30
70
50
70
13
ns
ns
ns
ns
nC
nC
nC
1.4
V
3.0
A
12
A
ns
μC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
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Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
On-State Characteristics
Transfer Characteristics
10
VGS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottorm:5.5V
10
Top:
1
1
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°C
0.1
1
Notes:
1. VDS=50V
2. 250µs Pulse Test
0.1
10
2
Drain-to-Source Voltage, VDS (V)
4
6
8
10
Gate-Source Voltage, VGS (V)
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance,
RDS(ON) (Ω)
„
Power MOSFET
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Drain-Source On-Resistance, RDS(ON)
(Normalized)
TYPICAL CHARACTERISTICS(Cont.)
Drain-Source Breakdown Voltage, BVDSS
(Normalized)
„
Power MOSFET
Maximum Drain Current vs. Case
Temperature
Transient Thermal Response Curve
3.0
1
2.5
D=0.5
2.0
0.2
0.1
0.1
1.5
0.05
0.02
1.0
0.01
Single Pulse
0.01
Notes:
1. θJC (t) = 1.18°C/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM× θJC (t)
10-5
10-4 10-3
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
0.5
0
25
50
75
100
125
Case Temperature, TC (°C)
150
Safe Operating Area – 600V
Operation in This Area is Limited by RDS(on)
101
100µs
1ms
10ms
100
DC
Notes:
1. TJ=25°C
2. TJ=150°C
3. Single Pulse
10-1
10-2
100
101
102
600
103
Drain-Source Voltage, VDS (V)
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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