UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * VDS = 600V, ID = 3A * RDS(ON) < 3.6Ω @VGS = 10 V * Ultra low gate charge ( typical 18 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-110.H 3N60 Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N60L-TA3-T 3N60G-TA3-T 3N60L-TF1-T 3N60G-TF1-T 3N60L-TF3-T 3N60G-TF3-T 3N60L-TF3T-T 3N60G-TF3T-T 3N60L-TM3-T 3N60G-TM3-T 3N60L-TN3-R 3N60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F TO-220F3 TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel MARKING INFORMATION PACKAGE TO-220 TO-220F TO-220F1 TO-220F3 TO-251 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MARKING 2 of 9 QW-R502-110.H 3N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A 200 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 75 TO-220F/TO-220F1 34 Power Dissipation PD W TO-220F3 TO-251/TO-252 50 Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=44.4mH, IAS=3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤3.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA Junction to Ambient Junction to Case PARAMETER TO-220 TO-220F/TO-220F1 TO-220F3 TO-251/TO-252 TO-220 TO-220F/TO-220F1 TO-220F3 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATING 62.5 UNIT θJA 62.5 °C/W 110 1.67 θJC 3.68 °C/W 2.5 3 of 9 QW-R502-110.H 3N60 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS=0 V, ID=250 μA VDS=600 V, VGS=0 V VGS=30 V, VDS=0 V VGS=-30 V, VDS=0 V Breakdown Voltage Temperature △BVDSS/△TJ ID=250μA, Referenced to 25°C Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10 V, ID=1.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=50V, ID=1.3A, IG=100μA Gate-Source Charge QGS VGS=10V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0 V, IS=3.0A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS=0V, IS=3.0A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 10 100 -100 0.6 2.0 V μA nA nA V/℃ 2.8 4.0 3.6 V Ω 350 50 5.5 450 65 7.5 pF pF pF 35 50 60 70 100 150 65 75 18.5 23 5.2 4.9 ns ns ns ns nC nC nC 1.4 V 3.0 A 12 A 210 1.2 ns μC 4 of 9 QW-R502-110.H UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Forward Voltage Drop 5 of 9 QW-R502-110.H 3N60 Power MOSFET Peak Diode Recovery dv/dt Waveforms TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit 12V Same Type as D.U.T. 50kΩ 0.2μF Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT 3mA VGS Charge Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform Unclamped Inductive Switching Waveforms 6 of 9 QW-R502-110.H 3N60 TYPICAL CHARACTERISTICS On-Resistance Variation vs. Drain Current and Gate Voltage On State Current vs. Allowable Case Temperature 6 10 Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (Ω) Power MOSFET 5 VGS=20V 4 VGS=10V 3 2 1 1 Note: TJ=25℃ 0 0 2 4 6 8 10 12 Drain Current, ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Notes: 1. VGS=0V 2. 250µs Test 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) 7 of 9 QW-R502-110.H 3N60 Drain-Source On-Resistance, RDS(ON) (Normalized) TYPICAL CHARACTERISTICS(Cont.) Drain-Source Breakdown Voltage, BVDSS (Normalized) Power MOSFET Maximum Drain Current vs. Case Temperature Transient Thermal Response Curve 3.0 1 2.5 D=0.5 2.0 0.2 0.1 0.1 1.5 0.05 0.02 1.0 0.01 Single Pulse 0.01 Notes: 1. θJC (t) = 1.18 /W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) 0.5 0 25 50 75 100 125 Case Temperature, TC (°C) 150 Safe Operating Area – 600V Operation in This Area is Limited by RDS(on) 101 100µs 1ms 10ms 100 DC Notes: 1. TJ=25 2. TJ=150 3. Single Pulse 10-1 10-2 100 101 102 600 103 Drain-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 9 QW-R502-110.H 3N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R502-110.H