Charge pumping and carrier separation characteristics of high-k gated SiGe channel p-MOSFETs

38th IEEE
Semiconductor Interface
Specialists Conference
SISC 2007
December 6-8, 2007
Key Bridge Marriott Hotel, Arlington, VA
www.ieeesisc.org
ABSTRACTS
General Chair:
Matt Copel
Technical Chair:
Ben Kaczer
Arrangements Chair:
Ex-Officio:
Dina Triyoso
Glen Wilk
The abstracts reproduced here are for the use of SISC attendees only. Authors are free to publish any of
their work presented in this abstract book. To encourage future participants to submit new and
unpublished work, conference policy is that these abstracts may not be referenced. The presentations
themselves, which may be significantly different from the associated abstracts, may be cited “as
discussed at the 2007 IEEE SISC, Arlington, VA.”
© 2007 IEEE SISC
38th IEEE
Semiconductor Interface
Specialists Conference
December 6-8, 2007
Key Bridge Marriott Hotel, Arlington, VA
www.ieeesisc.org
SISC 2007
Executive Committee
General Chair
Technical Chair
Arrangements
Ex-Officio
M. Copel
IBM
Yorktown Heights, NY
B. Kaczer
IMEC
Leuven, BELGIUM
D. Triyoso
Freescale
Austin, TX
G. D. Wilk
ASM America
Phoenix, AZ
Technical Program Committee
J. Chambers, Texas Instruments
Dallas, TX
G. Reimbold, LETI
Grenoble, FRANCE
M. Fischetti, U. Massachusetts
Amherst, MA
J. Robertson, Cambridge University
Cambridge, UK
M. Frank, IBM
Yorktown Heights, NY
J. Schaeffer, Freescale
East Fishkill, NY
A. Kerber, AMD
Yorktown Heights, NY
K. Shiraishi, Tsukuba University
Tsukuba, JAPAN
B.-H. Lee, International Sematech
Austin, TX
M. Takayanagi, Toshiba
Tokyo, JAPAN
P. Lenahan, Penn State
University Park, PA
C.-G. Wang, ASM
Phoenix, AZ
R. Nemanich, NCSU
Raleigh, NC
H. Watanabe, Osaka University
Osaka, JAPAN
L. Pantisano, IMEC
Leuven, BELGIUM
P. Ye, Purdue
West Lafayette, IN
This meeting is sponsored by the IEEE Electron Devices Society
38th IEEE
Semiconductor Interface
Specialists Conference
SISC 2007
December 6-8, 2007
Key Bridge Marriott Hotel, Arlington, VA
www.ieeesisc.org
SISC Ed Nicollian Award for Best Student Paper
In 1995, the SISC began presenting an award for the best student presentation, in honor of
Professor E.H. Nicollian, University of North Carolina at Charlotte. Professor Nicollian was a
pioneer in the exploration of the metal-oxide-semiconductor system, particularly in the area of
electrical measurements. His efforts were fundamental in establishing the SISC in its early years,
and he served as its technical program chair in 1982. With John Brews, he wrote the definitive
book, “MOS Physics and Technology,” published by Wiley Interscience.
The SISC Ed Nicollian Award for Best Student Paper is presented to the lead student author or
either an oral or poster presentation. The winner is chosen by members of the technical program
committee at the end of the SISC. The award consists of a plaque and an honorarium sent to the
winner after the conference. To honor the winner, the award is announced at the conference
taking place the following year.
The 2006 SISC Ed Nicollian Award for Best Student Paper was given to Laurent Thevenod of
CEA-LETI/MINATEC, Grenoble, France. The paper was entitled “Characterization of
TiN/HfO2/SiO2 MOSFETs by extracting mobility from magnetoresistance measurements” with
co-authors M. Cassé, W. Desrat, M. Mouis, G. Reimbold, and F. Boulanger.
38th IEEE
Semiconductor Interface
Specialists Conference
SISC 2007
December 6-8, 2007
Key Bridge Marriott Hotel, Arlington, VA
www.ieeesisc.org
Conference Agenda Overview
Wednesday, December 5, 2007
Registration............................................................................................... 6:00 PM – 9:00 PM
Hospitality Room...................................................................................... 7:00 PM – Midnight
Thursday, December 6, 2007
Registration............................................................................................... 8:00 AM – 5:00 PM
Session 1 – High-k Defects and FET Mobility ....................................... 8:00 AM – 9:20 AM
Poster Session 1 – Oxide Defects ............................................................. 9:25 AM – 9:40 AM
Session 2 – Reliability............................................................................... 10:10 AM – 11:30 AM
Poster Session 2 – Reliability and Non-Volatile Memories................... 11:35 AM – 12:02 PM
Session 3 – Advanced High-k Stacks ...................................................... 1:30 PM – 2:30 PM
Poster Session 3 – High-Mobility Substrates ......................................... 2:35 PM – 3:02 PM
Session 4 – Non-Volatile Memories......................................................... 3:30 PM – 4:50 PM
Poster Session 4 – Metal Gates and Work Function Control............... 4:55 PM – 5:16 PM
Poster Reception ....................................................................................... 7:00 PM – 10:00 PM
Hospitality Room...................................................................................... 9:00 PM – Midnight
Friday, December 7, 2007
Registration............................................................................................... 8:00 AM – Noon
Session 5 – High-Mobility Substrates I................................................... 8:00 AM – 10:00 AM
Session 6 – High-Mobility Substrates II ................................................. 10:30 AM – 12:10 PM
Technical Committee / Invited Speaker Luncheon .............................. 12:10 PM – 1:30 PM
Optional Rump Sessions .......................................................................... 3:00 PM – 5:30 PM
Conference Banquet and Limerick Contest........................................... 7:00 PM – 10:00 PM
Hospitality Room...................................................................................... 10:00 PM – Midnight
Saturday, December 8, 2007
Session 7 – Theory .................................................................................... 8:20 AM – 10:00 AM
Session 6 – Work Function Control........................................................ 10:20 AM – 11:45 AM
38th IEEE
Semiconductor Interface
Specialists Conference
SISC 2007
December 6-8, 2007
Key Bridge Marriott Hotel, Arlington, VA
www.ieeesisc.org
Conference Program
Session 1 - High-k Defects and FET Mobility
Thursday, December 6, 2007
Session Chair: M. Frank
8:00 AM
Welcome and opening remarks
8:05 AM
1.1 Invited - Electron Transport in Bulk-Si NMOSFET's in Presence of High-k Gate
Insulator, K. Maitra1, M. Frank2, V. Narayanan2, B. P. Linder2, E. Gusev3, V. Misra4, E.
Cartier2, 1AMD, 2IBM, 3Qualcomm, 4North Carolina State University
8:40 AM
1.2 - Inherent point defects at the epitaxial Lu2O3/(111)Si interface probed by electron
spin resonance, A. Stesmans1, P. Somers1, V. V. Afanas’ev1, W. Tian2, L. F. Edge2, D. G.
Schlom2, 1Katholieke Universiteit Leuven, Belgium, 2Pennsylvania State University
9:00 AM
1.3 - Trap Energy Levels in HfO2, HfAlyOx, and Al2O3 Thin Films, C.-C. Yeh1, N.
Ramaswamy2, N. Rocklein2, D. Gealy2, K. Min3, T. Graettinger2, T. P. Ma1, 1Yale
University, 2Micron Technology, 3Intel Corporation
Poster Session 1 - Oxide Defects
Thursday, December 6, 2007
Session Chair: E. Vogel
9:25 AM
P.1 - Effect of electrical bias on paramagnetic defects at high-k (HfO2)x(SiO2)1-x on
(100)Si, P. T. Chen, B. B. Triplett, Y. Nishi, J. Chambers, L. Colombo, Stanford University
9:28 AM
P.2 - Characterization of Dysprosium oxide (Dy2O3) incorporated HfO2 gate oxide
devices, T. Lee, J. C. Lee, S. K. Banerjee, University of Texas at Austin
9:31 AM
P.3 - Effect of oxidation pressure on Pb center generation and H termination for thin
thickness SiO2 under 2.5 nm, D. Matsushita, K. Kato, K. Muraoka, Y. Mitani, Toshiba
Corporation, Japan
9:34 AM
P.4 - Effects of Aging on Strained Si-Si Bonds and O Vacancies near the SiO2/Si
Interface, X. J. Zhou1, D. M. Fleetwood1, I. Danciu1, A. Dasgupta1, S. A. Francis1, A. D.
Touboul2, 1Vanderbilt University, 2University Montpellier, France
9:37 AM
P.5 - Effect of STI Mechanical Stress on p-Channel Gate Oxide Integrity, C.-Y. Hsieh1,
Y.-T. Lin1, T.-H. Liang1, W.-C. Lee2, J.-B. Bouche1, M.-J. Chen1, 1National Chiao-Tung
University, Taiwan, 2TSMC, Taiwan
9:40 AM
Break
Session 2 - Reliability
Thursday, December 6, 2007
Session Chair: P. Lenahan
10:10 AM
Opening remarks
10:15 AM
2.1 Invited - Reversible and Irreversible Instabilities in High-k/Metal Gate Stacks, G.
Bersuker, SEMATECH
10:50 AM
2.2 - Hot Carrier Injection Study on Sidewall Surfaces of HfSiON/TiN FinFETs, C. D.
Young1, K. Matthews2, S. Suthram3, M. M. Hussain1, C. Smith1, R. Harris4, R. Choi1, H.-H.
Tseng1, 1SEMATECH, 2ADTF, 3University of Florida, 4AMD
11:10 AM
2.3 - Electron energy dependence of defect generation in high-κ gate stacks, R.
O’Connor1, L. Pantisano1, R. Degraeve1, T. Kauerauf1, B. Kaczer1, Ph. J. Roussel1, G.
Groeseneken2, 1IMEC, Belgium, 2Katholieke Universiteit Leuven, Belgium
Poster Session 2 - Reliability and Non-Volatile Memories
Thursday, December 6, 2007
Session Chair: C.-G. Wang
11:35 AM
P.6 - Tunneling Component Suppression in Charge Pumping Measurement and
Reliability Study for Thin High-k Gated MOSFETs, C.-C. Lu, K.-S. Chang-Liao, C.-Y.
Lu, S.-C. Chang, T.-K. Wang, National Tsing Hua University, Taiwan
11:38 AM
P.7 - Mechanism for SILC Trap Creation Due to Released Bi-Hydrogen from Gate
Oxide Interface, Y. Mitani1, T. Yamaguchi1, H. Satake1, A. Toriumi2, 1Toshiba
Corporation, Japan, 2University of Tokyo, Japan
11:41 AM
P.8 - PBTI Associated Hot Carrier Characteristics of Nano-scale NMOSFETs with
Advanced Gate Stack of Metal Gate/High-k dielectrics, K. T. Lee1,5, C. Y. Kang2, R.
Choi2, S. C. Song2, B. H. Lee2,3, O. S. Yoo4,5, H.-D. Lee4,5, Y.-H. Jeong1, 1Pohang
University, Korea, 2SEMATECH, 3IBM, 4Chungnam National University, Korea,
5
University of Texas at Austin
11:44 AM
P.9 - Impact of the Hard Breakdown detection method on the extraction of the
Wearout distribution parameters, S. Sahhaf1, R. Degraeve2, Ph. J. Roussel2, B. Kaczer2,
T. Kauerauf2, G. Groeseneken1, 1Katholieke Universiteit Leuven, Belgium, 2IMEC, Belgium
11:47 AM
P.10 - Electron tunneling spectroscopy study of traps in Si3N4 for SONOS technology,
M. Wang, C.-C. Yeh, C.-C. Ho, T. P. Ma, Yale University
11:50 AM
P.11 - A Physical Model of the Switching Mechanism in Oxide Resistive Switching
Random Access Memory, L. F. Liu, J. F. Kang, B. Sun, J. F. Yang, B. G. Yan, C. Chen, N.
Xu, X. Sun, H. Tang, D. D. Han, Y. Wang, X. Y. Liu, X. Zhang, R. Q. Han, Peking
University, China
11:53 AM
P.12 - Retention Improvement in fluorinated-HfO2/SiO2 Tunnel stack for Non-Volatile
Flash Memory, S. Verma1, P. Majhi2, H. Hwang3, P. Kapur1, G. Bersuker4, K. Parat2, W.
Tsai2, K. C.Saraswat1, 1Stanford University, 2Intel Corporation, 3GIST, Korea,
4
SEMATECH
11:59 AM
P.13 - NH3 treatments of Hf-based layers for application as NVM active dielectrics, M.
Bocquet1,2, G. Molas2, E. Martinez2, H. Grampeix2, F. Martin2, J. P. Colonna2, J. Buckley2,
C. Licitra2, N. Rochat2, T. Veyron2, A. M. Papon2, F. Aussenac2, V. Delaye2, M. Gély2, G.
Pananakakis1, B. De Salvo2, G. Ghibaudo1, S. Deleonibus2, 1IMEP-CNRS/INPG, France,
2
CEA-LETI, France
12:02 AM
Adjourn for lunch
Session 3 – Advanced High-k Stacks
Thursday, December 6, 2007
Session Chair: M. Takayanagi
1:30 PM
Opening remarks
1:35 PM
3.1 Invited - Photoemission Study of Metal/High-k Dielectric Gate Stack, S. Miyazaki1,
H. Yoshinaga1, A. Ohta1, Y. Akasaka2, K. Shiraishi3, K. Yamada4, S. Inumiya2, M.
Kadoshima2 and Y. Nara2, 1Hiroshima University, Japan, 2Selete, Japan, 3University of
Tsukuba, Japan, 4Waseda University, Japan
2:10 PM
3.2 - Electron and hole trapping in oxides: amorphous vs. crystalline materials, A.
Kimmel, K. McKenna, J. Gavartin, A. Shluger, University College London, UK
Poster Session 3 - High-Mobility Substrates
Thursday, December 6, 2007
Session Chair: G. Reimbold
2:35 PM
P.14 - First-principles investigation of oxygen adsorption on GaAs(001), M.
Scarrozza1,2, G. Pourtois1, M. Houssa1,2, A. Stesmans2, M. Meuris1, M. Heyns1,2, 1IMEC,
Belgium, 2Katholieke Universiteit Leuven, Belgium
2:38 PM
P.15 - InAs and In0.8Ga0.2As Field-Effect-Transistors with Al2O3 Gate Dielectric
Deposited by Molecular-Atom-Deposition (MAD), N. Li1, E. S. Harmon1, D. Salzman1,
X. W. Wang2, T. P. Ma2, 1Lightspin Technologies, Inc., 2Yale University
2:41 PM
P.16 - Electrical and Chemical Properties of ALD Grown HfO2 Films on GeOxNy/Ge
Substrates after Thermal Treatment, Y. Oshima1,3, Y. Sun2, D. Kuzum1, T. Sugawara3,
K. C. Saraswat1, P. Pianetta2, P. C. McIntyre1, 1Stanford University, 2Stanford Synchrotron
Radiation Laboratory, 3Tokyo Electron Ltd, Japan
2:44 PM
P.17 - GaAs MOS C-V Measurements - Surface Chemistry and Device Physics
Perspective, P. D. Ye1, J. M. Woodall1, T. Yang1, Y. Xuan1, D. Zemlyanov1, T. Shen1, Y.
Q. Wu1, R. M. Wallace2, 1Purdue University, 2University of Texas at Dallas
2:47 PM
P.18 - Charge pumping characterization of germanium MOSFETs, K. Martens2, B.
Kaczer1, T. Grasser3, B. De Jaeger1, M. Meuris1, G. Groeseneken2, H. Maes2, 1IMEC,
Belgium, 2Katholieke Universiteit Leuven, Belgium, 3Technische Universität Wien, Austria
2:50 PM
P.19 - ALD high-k dielectric growth on high-mobility graphene surface, Y. Xuan, Y. Q.
Wu, T. Shen, P. D. Ye, Purdue University
2:53 PM
P.20 - Atomic Layer Deposition of Al2O3 and HfO2 on GaAs substrates, D. Shahrjerdi,
S. Coffee, J. G. Ekerdt, S. K. Banerjee, University of Texas at Austin
2:59 PM
P.21 - Study of surface preparation for high-k dielectrics on GaAs, F. S. AguirreTostado1, M. Milojevic1, S. McDonnell1, R. Contreras-Guerrero1, C. L. Hinkle1, K. J. Choi1,
J. Kim1, E. M. Vogel1, A. Herrera-Gomez1, R. M. Wallace1, T. Yang2, Y. Xuan2, P. D. Ye2,
1
University of Texas at Dallas, 2Purdue University
3:02 PM
Break
Session 4 - Non-Volatile Memories
Thursday, December 6, 2007
Session Chair: B.-H. Lee
3:30 PM
Opening remarks
3:35 PM
4.1 Invited - Resistance Switching Characteristics of Doped Metal Oxide for NonVolatile Memory Applications, D. S. Lee, W. Xiang, R. Dong, D. J. Seong, H. Hwang,
GIST, Korea
4:10 PM
4.2 - Dielectric Layer Quality Effect on Charge Transport Mechanisms in a Localized
Trapping-Based Nonvolatile Memory Device, Y. Shur1, Y. Shacham-Diamand1, B.
Eitan2, A. Shappir2, 1Tel Aviv University, Israel, 2Saifun Semiconductors, Israel
4:30 PM
4.3 - Al2O3 as the Interpoly or Blocking Dielectric In Flash Memories, X. W. Wang, S.I. Shim, T. P. Ma, Yale University
Poster Session 4 - Metal Gates and Work Function Control
Thursday, December 6, 2007
Session Chair: P. D. Ye
4:55 PM
P.22 - Fluorine in Metal Gate / High-k Gate Stacks: Diffusion and Electrically Active
States, M. M. Frank, E. A. Cartier, R. Jha, V. R. Deline, IBM
4:58 PM
P.23 - Oxygen Transfer from Metal Gate to High-k Gate Dielectric Stacks: Interface
Structure & Property Changes, J.-H. Ha1, H. AlShareef2, J. Chambers2, Y. Sun3, P.
Pianetta3, P. C. McIntyre1, L. Colombo2, 1Stanford University, 2Texas Instruments,
3
Stanford Synchrotron Radiation Laboratory
5:01 PM
P.24 - Investigation of the Work Function of TiN on High-K Dielectric / p-type Si Gate
Stack Structures Using Photoemission Spectroscopy, J. Choung1, K. Choi2, J. E. Rowe1,
H. Jeon1,3, R. J. Nemanich1,4, 1North Carolina State University, 2SEMATECH, 3Hanyang
University, Korea, 4Arizona State University
5:04 PM
P.25 - Ab initio Study of Metal Gate Electrode - Gate Oxide Interface Work Function,
B. Magyari-Kope1, Y. Nishi1, K. Cho2, 1Stanford University, 2University of Texas at Dallas
5:07 PM
P.26 - Effect of Gadolinium (Gd) incorporation in NiSi FUSI gate / High-k dielectric
via Electrical and Structural Modification of the Gate stack, B. Lee, S. R. Novak, N.
Biswas, V. Misra, North Carolina State University
5:10 PM
P.27 - The effect of high pressure post metallization annealing in dilute oxygen
ambient on effective work function of metal gate, J.-M. Lee1, H. Park1, M. Hasan1, M.
Jo1, M. Chang1, R. Choi2, B. H. Lee2,3, H. Hwang1, 1GIST, Korea, 2SEMATECH, 3IBM
5:13 PM
P.28 - Investigations on PVD and CVD TiN workfunctions for advanced MOS
applications, C. Leroux1, M. Charbonnier1, V. Cosnier2, P. Besson2, J. Mitard1,2, G.
Reimbold1, F. Martin1, 1CEA-LETI, France, 2STMicroelectronics, France
5:16 PM
Adjourn
7:00 PM
Poster Reception
Session 5 - High-Mobility Substrates I
Friday, December 7, 2007
Session Chair: M. Fischetti
8:00 AM
Morning announcements
8:05 AM
5.1 Invited - Ge and III/V: the CMOS of the Future, M. Heyns1,2, C. Adelmann1, F.
Bellenger1, G. Brammertz1, D. Brunco3, M. Caymax1, B. De Jaeger1, A. Delabie1, G.
Eneman1, M. Houssa1, B. Kaczer1, D. Lin4, K. Martens1, M. Meuris1, J. Mittard1, K.
Opsomer1, G. Pourtois1, A. Satta1, M. Scarrozza1, E. Simoen1, S. Sioncke1, L. Souriau1, V.
Terzieva1, S. Van Elshocht1, 1IMEC, Belgium, 2Katholieke Universiteit Leuven, Belgium,
3
Intel Corporation, 4Purdue University
8:40 AM
5.2 - Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and
HfO2, V. V. Afanas’ev1, A. Stesmans1, A. Delabie2, M. Houssa2, 1Katholieke Universiteit
Leuven, Belgium, 2IMEC, Belgium
9:00 AM
5.3 - Elimination of Ge-O bonding in interfacial transition regions between Ge and Hfbased gate dielectrics: a necessary requirement of low defect density interfaces
between n-type Ge and oxide dielectrics, G. Lucovsky1, S. Lee1, J. P. Long1, H. Seo1, J.
Luning2, 1North Carolina State University, 2Stanford Synchrotron Radiation Laboratory
9:20 AM
5.4 - Investigation of Poor Carrier Transport in Germanium NFETs, A. Khakifirooz,
A. Ritenour, J. Hennessy, D. A. Antoniadis, Massachusetts Institute of Technology
9:40 AM
5.5 - Charge Pumping and Carrier Separation Characteristics of High-κ Gated SiGe
Channel p-MOSFETs, L. Y. Song1, A. Lubow1, C. Xiong1, X. Pan1, T. P. Ma1, R. Harris2,
P. Majhi2, P. Kirsch2, H.-H. Tseng2, 1Yale University, 2SEMATECH
10:00 AM
Break
Session 6 - High-Mobility Substrates II
Friday, December 7, 2007
Session Chair: R. Nemanich
10:30 AM
Opening remarks
10:35 AM
6.1 Invited - Structure and Composition of High-k Films on Alternative Channel
Materials, L. Goncharova, O. Celik, C.-L. Hsueh, T. Feng, E. Garfunkel and T. Gustafsson,
Rutgers University
11:10 AM
6.2 - Influence of the substrate orientation on the electrical and material properties of
GaAs MOSFETs Using HfO2 and Silicon Interface Passivation Layer, I.-J. Ok1, H.
Kim1, M. Zhang1, F. Zhu1, S. Park1, J. Yum1, H. Zhao1, D. Garcia2, P. Majhi2, J. C. Lee1,
1
University of Texas at Austin, 2SEMATECH
11:30 AM
6.3 - GaAs MOS Frequency Dispersion Reduction by Surface Oxide Removal and
Passivation, C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, M. Milojevic, B. Lee,
F. S. Aguirre-Tostado, K. J. Choi, J. Kim, R. M. Wallace, University of Texas at Dallas
11:50 AM
6.4 - Enhancement-mode GaAs MOS-HEMTs with ALD Al2O3, HfO2, HfO2/Al2O3
laminate as high-k gate dielectrics, H. C. Lin, T. Yang, H. Sharifi, S. K. Kim, Y. Xuan, T.
Shen, S. Mohammadi, P. D. Ye, Purdue University
12:10 PM
Adjourn for lunch ; Technical Committee / Invited Speaker Luncheon
3:00 PM
Optional Rump Sessions – Topics TBD
7:00 PM
Conference Banquet and Limerick Contest
Session 7 - Theory
Saturday, December 8, 2007
Session Chair: K. Shiraishi
8:20 AM
Morning announcements
8:25 AM
7.1 Invited - First Principles Investigation of Defects at Semiconductor-Oxide
Interfaces, A. Pasquarello, EPFL, Switzerland
9:00 AM
7.2 - Band-gap and permittivity change at high-k gate stack interfaces - device
perspective, S. Markov1,2, S. Roy1, C. Fiegna2, E. Sangiorgi2, A. Asenov1, 1University of
Glasgow, UK, 2University of Bologna, Italy
9:20 AM
7.3 - Defect Fermi level pinning model for HfO2 on p-Metal gates, J. Robertson,
Cambridge University, UK
9:40 AM
7.4 - Role of Te on the effective work function of Mo/HfO2, K. Xiong1, P. D. Delugas1,
V. Fiorentini2, J. Robertson3, D. M. Liu3, G. Pourtois4, J. C. Hooker1, 1NXP Semiconductors,
Belgium, 2Universita di Cagliari, Italy, 3Cambridge University, UK, 4IMEC, Belgium
10:00 AM
Break
Session 8 - Work Function Control
Saturday, December 8, 2007
Session Chair: J. Robertson
10:20 AM
Opening remarks
10:25 AM
8.1 - Origin of Threshold Voltage Shift and EOT Change in TiN Gate MOSFETs
Analyzed by Positron Annihilation Spectroscopy and Backside X-ray Photoelectron
Spectroscopy, T. Matsuki1, T. Watanabe1, T. Miura1, N. Mise1, T. Eimori1, Y. Nara1, Y.
Ohji1, K. Yamada2, A. Uedono3, 1Selete, Japan, 2Waseda University, Japan, 3University of
Tsukuba, Japan
10:45 AM
8.2 - Mechanism of Vfb shift in SiO2 and Hf-based gate dielectric stacks by capping
Gd2O3, M. Zhang, F. Zhu, I.-J. Ok, H.-S. Kim, H. Zhao, J. C. Lee, University of Texas at
Austin
11:05 AM
8.3 - A Comprehensive Study on Effective Work Function Modulation of Metal/Highk Gate Stacks, T. Hosoi1, Y. Kita1, Y. Kagei1, T. Shimura1, H. Watanabe1, K. Shiraishi2, Y.
Nara3, K. Yamada4, 1Osaka University, Japan, 2University of Tsukuba, Japan, 3Selete,
Japan, 4Waseda University, Japan
11:25 AM
8.4 - A Significant Shift of Strongly Pinned Charge Neutrality Level at
Metal/Germanium Interface by Inserting Ultra-thin Oxides, T. Nishimura, K. Kita, A.
Toriumi, University of Tokyo, Japan
11:45 AM
Closing remarks
38th IEEE
Semiconductor Interface
Specialists Conference
SISC 2007
December 6-8, 2007
Key Bridge Marriott Hotel, Arlington, VA
www.ieeesisc.org
Author Index
Adelmann C.
5.1
Chen M.-J.
P.5
Afanas’ev V. V.
1.2, 5.2
Chen P. T.
P.1
Aguirre-Tostado F. S.
6.3, P.21
Cho K.
P.25
Akasaka Y.
3.1
Choi K.
P.24
AlShareef H.
P.23
Choi K. J.
6.3, P.21
Antoniadis D. A.
5.4
Choi R.
2.2, P.27, P.8
Asenov A.
7.2
Choung J.
P.24
Aussenac F.
P.13
Coffee S.
P.20
Banerjee S. K.
P.2, P.20
Colombo L.
P.1, P.23
Bellenger F.
5.1
Colonna J. P.
P.13
Bersuker G.
2.1, P.12
Contreras-Guerrero R.
P.21
Besson P.
P.28
Cosnier V.
P.28
Biswas N.
P.26
Danciu I.
P.4
Bocquet M.
P.13
Dasgupta A.
P.4
Bouche J.-B.
P.5
De Jaeger B.
5.1, P.18
Brammertz G.
5.1
De Salvo B.
P.13
Brunco D.
5.1
Degraeve R.
2.3, P.9
Buckley J.
P.13
Delabie A.
5.1, 5.2
Cartier E.
1.1, P.22
Delaye V.
P.13
Caymax M.
5.1
Deleonibus S.
P.13
Celik O.
6.1
Deline V. R.
P.22
Chambers J.
P.1, P.23
Delugas P. D.
7.4
Chang M.
P.27
Dong R.
4.1
Chang S.-C.
P.6
Edge L. F.
1.2
Chang-Liao K.-S.
P.6
Eimori T.
8.1
Charbonnier M.
P.28
Eitan B.
4.2
Chen C.
P.11
Ekerdt J. G.
P.20
Eneman G.
5.1
Inumiya S.
3.1
Feng T.
6.1
Jeon H.
P.24
Fiegna C.
7.2
Jeong Y.-H.
P.8
Fiorentini V.
7.4
Jha R.
P.22
Fleetwood D. M.
P.4
Jo M.
P.27
Francis S. A.
P.4
Kaczer B.
2.3, 5.1, P.18, P.9
Frank M.
1.1, P.22
Kadoshima M.
3.1
Garcia D.
6.2
Kagei Y.
8.3
Garfunkel E.
6.1
Kang C. Y.
P.8
Gavartin J.
3.2
Kang J. F.
P.11
Gealy D.
1.3
Kapur P.
P.12
Ghibaudo G.
P.13
Kato K.
P.3
Goncharova L.
6.1
Kauerauf T.
2.3, P.9
Graettinger T.
1.3
Khakifirooz A.
5.4
Grampeix H.
P.13
Kim H.
6.2, 8.2
Grasser T.
P.18
Kim J.
6.3, P.21
Groeseneken G.
2.3, P.18, P.9
Kim S. K.
6.4
Gusev E.
1.1
Kimmel A.
3.2
Gustafsson T.
6.1
Kirsch P.
5.5
Gély M.
P.13
Kita K.
8.4
Ha J.-H.
P.23
Kita Y.
8.3
Han D. D.
P.11
Kuzum D.
P.16
Han R. Q.
P.11
Lee B.
6.3, P.26
Harmon E. S.
P.15
Lee B. H.
P.27, P.8
Harris R.
2.2, 5.5
Lee D. S.
4.1
Hasan M.
P.27
Lee H.-D.
P.8
Hennessy J.
5.4
Lee J. C.
6.2, 8.2, P.2
Herrera-Gomez A.
P.21
Lee J.-M.
P.27
Heyns M.
5.1, P.14
Lee K. T.
P.8
Hinkle C. L.
6.3, P.21
Lee S.
5.3
Ho C.-C.
P.10
Lee T.
P.2
Hooker J. C.
7.4
Lee W.-C.
P.5
Hosoi T.
8.3
Leroux C.
P.28
Houssa M.
5.1, 5.2, P.14
Li N.
P.15
Hsieh C.-Y.
P.5
Liang T.-H.
P.5
Hsueh C.-L.
6.1
Licitra C.
P.13
Hussain M. M.
2.2
Lin D.
5.1
Hwang H.
4.1, P.12, P.27
Lin H. C.
6.4
Lin Y.-T.
P.5
Muraoka K.
P.3
Linder B. P.
1.1
Nara Y.
3.1, 8.1, 8.3
Liu D. M.
7.4
Narayanan V.
1.1
Liu L. F.
P.11
Nemanich R. J.
P.24
Liu X. Y.
P.11
Nishi Y.
P.1, P.25
Long J. P.
5.3
Nishimura T.
8.4
Lu C.-C.
P.6
Novak S. R.
P.26
Lu C.-Y.
P.6
Ohji Y.
8.1
Lubow A.
5.5
Ohta A.
3.1
Lucovsky G.
5.3
Ok I.-J.
6.2, 8.2
Luning J.
5.3
Opsomer K.
5.1
Ma T. P.
1.3, 4.3, 5.5, P.10, P.15
Oshima Y.
P.16
Maes H.
P.18
O’Connor R.
2.3
Magyari-Kope B.
P.25
Pan X.
5.5
Maitra K.
1.1
Pananakakis G.
P.13
Majhi P.
5.5, 6.2, P.12
Pantisano L.
2.3
Markov S.
7.2
Papon A. M.
P.13
Martens K.
5.1, P.18
Parat K.
P.12
Martin F.
P.13, P.28
Park H.
P.27
Martinez E.
P.13
Park S.
6.2
Matsuki T.
8.1
Pasquarello A.
7.1
Matsushita D.
P.3
Pianetta P.
P.16, P.23
Matthews K.
2.2
Pourtois G.
5.1, 7.4, P.14
McDonnell S.
6.3, P.21
Ramaswamy N.
1.3
McIntyre P. C.
P.16, P.23
Reimbold G.
P.28
McKenna K.
3.2
Ritenour A.
5.4
Meuris M.
5.1, P.14, P.18
Robertson J.
7.3, 7.4
Milojevic M.
6.3, P.21
Rochat N.
P.13
Min K.
1.3
Rocklein N.
1.3
Mise N.
8.1
Roussel Ph. J.
2.3, P.9
Misra V.
1.1, P.26
Rowe J. E.
P.24
Mitani Y.
P.3, P.7
Roy S.
7.2
Mitard J.
P.28
Sahhaf S.
P.9
Mittard J.
5.1
Salzman D.
P.15
Miura T.
8.1
Sangiorgi E.
7.2
Miyazaki S.
3.1
Saraswat K. C.
P.12, P.16
Mohammadi S.
6.4
Satake H.
P.7
Molas G.
P.13
Satta A.
5.1
Scarrozza M.
5.1, P.14
Uedono A.
8.1
Schlom D. G.
1.2
Van Elshocht S.
5.1
Seo H.
5.3
Verma S.
P.12
Seong D. J.
4.1
Veyron T.
P.13
Shacham-Diamand Y.
4.2
Vogel E. M.
6.3, P.21
Shahrjerdi D.
P.20
Wallace R. M.
6.3, P.17, P.21
Shappir A.
4.2
Wang M.
P.10
Sharifi H.
6.4
Wang T.-K.
P.6
Shen T.
6.4, P.17, P.19
Wang X. W.
4.3, P.15
Shim S.-I.
4.3
Wang Y.
P.11
Shimura T.
8.3
Watanabe H.
8.3
Shiraishi K.
3.1, 8.3
Watanabe T.
8.1
Shluger A.
3.2
Woodall J. M.
P.17
Shur Y.
4.2
Wu Y. Q.
P.17, P.19
Simoen E.
5.1
Xiang W.
4.1
Sioncke S.
5.1
Xiong C.
5.5
Smith C.
2.2
Xiong K.
7.4
Somers P.
1.2
Xu N.
P.11
Song L. Y.
5.5
Xuan Y.
6.4, P.17, P.19, P.21
Song S. C.
P.8
Yamada K.
3.1, 8.1, 8.3
Sonnet A. M.
6.3
Yamaguchi T.
P.7
Souriau L.
5.1
Yan B. G.
P.11
Stesmans A.
1.2, 5.2, P.14
Yang J. F.
P.11
Sugawara T.
P.16
Yang T.
6.4, P.17, P.21
Sun B.
P.11
Ye P. D.
6.4, P.17, P.19, P.21
Sun X.
P.11
Yeh C.-C.
1.3, P.10
Sun Y.
P.16, P.23
Yoo O. S.
P.8
Suthram S.
2.2
Yoshinaga H.
3.1
Tang H.
P.11
Young C. D.
2.2
Terzieva V.
5.1
Yum J.
6.2
Tian W.
1.2
Zemlyanov D.
P.17
Toriumi A.
8.4, P.7
Zhang M.
6.2, 8.2
Touboul A. D.
P.4
Zhang X.
P.11
Triplett B. B.
P.1
Zhao H.
6.2, 8.2
Tsai W.
P.12
Zhou X. J.
P.4
Tseng H.-H.
2.2, 5.5
Zhu F.
6.2, 8.2
38th IEEE
Semiconductor Interface
Specialists Conference
SISC 2007
December 6-8, 2007
Key Bridge Marriott Hotel, Arlington, VA
www.ieeesisc.org
Affiliation Index
ADTF
2.2
AMD
1.1, 2.2
Arizona State University
P.24
Cambridge University, UK
7.3, 7.4
CEA-LETI, France
P.13, P.28
Chungnam National University, Korea
P.8
EPFL, Switzerland
7.1
GIST, Korea
4.1, P.12, P.27
Hanyang University, Korea
P.24
Hiroshima University, Japan
3.1
IBM
1.1, P.22, P.27, P.8
IMEC, Belgium
2.3, 5.1, 5.2, 7.4, P.14, P.18, P.9
IMEP-CNRS/INPG, France
P.13
Intel Corporation
1.3, 5.1, P.12
Katholieke Universiteit Leuven, Belgium
1.2, 2.3, 5.1, 5.2, P.14, P.18, P.9
Lightspin Technologies, Inc.
P.15
Massachusetts Institute of Technology
5.4
Micron Technology
1.3
National Chiao-Tung University, Taiwan
P.5
National Tsing Hua University, Taiwan
P.6
North Carolina State University
1.1, 5.3, P.24, P.26
NXP Semiconductors, Belgium
7.4
Osaka University, Japan
8.3
Peking University, China
P.11
Pennsylvania State University
1.2
Pohang University, Korea
P.8
Purdue University
5.1, 6.4, P.17, P.19, P.21
Qualcomm
1.1
Rutgers University
6.1
Saifun Semiconductors, Israel
4.2
Selete, Japan
3.1, 8.1, 8.3
SEMATECH
2.1, 2.2, 5.5, 6.2, P.12, P.24, P.27, P.8
Stanford Synchrotron Radiation Laboratory
5.3, P.16, P.23
Stanford University
P.1, P.12, P.16, P.23, P.25
STMicroelectronics, France
P.28
Technische Universität Wien, Austria
P.18
Tel Aviv University, Israel
4.2
Texas Instruments
P.23
Tokyo Electron Ltd, Japan
P.16
Toshiba Corporation, Japan
P.3, P.7
TSMC, Taiwan
P.5
Universita di Cagliari, Italy
7.4
University College London, UK
3.2
University Montpellier, France
P.4
University of Bologna, Italy
7.2
University of Florida
2.2
University of Glasgow, UK
7.2
University of Texas at Austin
6.2, 8.2, P.2, P.20, P.8
University of Texas at Dallas
6.3, P.17, P.21, P.25
University of Tokyo, Japan
8.4, P.7
University of Tsukuba, Japan
3.1, 8.1, 8.3
Vanderbilt University
P.4
Waseda University, Japan
3.1, 8.1, 8.3
Yale University
1.3, 4.3, 5.5, P.10, P.15
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