38th IEEE Semiconductor Interface Specialists Conference SISC 2007 December 6-8, 2007 Key Bridge Marriott Hotel, Arlington, VA www.ieeesisc.org ABSTRACTS General Chair: Matt Copel Technical Chair: Ben Kaczer Arrangements Chair: Ex-Officio: Dina Triyoso Glen Wilk The abstracts reproduced here are for the use of SISC attendees only. Authors are free to publish any of their work presented in this abstract book. To encourage future participants to submit new and unpublished work, conference policy is that these abstracts may not be referenced. The presentations themselves, which may be significantly different from the associated abstracts, may be cited “as discussed at the 2007 IEEE SISC, Arlington, VA.” © 2007 IEEE SISC 38th IEEE Semiconductor Interface Specialists Conference December 6-8, 2007 Key Bridge Marriott Hotel, Arlington, VA www.ieeesisc.org SISC 2007 Executive Committee General Chair Technical Chair Arrangements Ex-Officio M. Copel IBM Yorktown Heights, NY B. Kaczer IMEC Leuven, BELGIUM D. Triyoso Freescale Austin, TX G. D. Wilk ASM America Phoenix, AZ Technical Program Committee J. Chambers, Texas Instruments Dallas, TX G. Reimbold, LETI Grenoble, FRANCE M. Fischetti, U. Massachusetts Amherst, MA J. Robertson, Cambridge University Cambridge, UK M. Frank, IBM Yorktown Heights, NY J. Schaeffer, Freescale East Fishkill, NY A. Kerber, AMD Yorktown Heights, NY K. Shiraishi, Tsukuba University Tsukuba, JAPAN B.-H. Lee, International Sematech Austin, TX M. Takayanagi, Toshiba Tokyo, JAPAN P. Lenahan, Penn State University Park, PA C.-G. Wang, ASM Phoenix, AZ R. Nemanich, NCSU Raleigh, NC H. Watanabe, Osaka University Osaka, JAPAN L. Pantisano, IMEC Leuven, BELGIUM P. Ye, Purdue West Lafayette, IN This meeting is sponsored by the IEEE Electron Devices Society 38th IEEE Semiconductor Interface Specialists Conference SISC 2007 December 6-8, 2007 Key Bridge Marriott Hotel, Arlington, VA www.ieeesisc.org SISC Ed Nicollian Award for Best Student Paper In 1995, the SISC began presenting an award for the best student presentation, in honor of Professor E.H. Nicollian, University of North Carolina at Charlotte. Professor Nicollian was a pioneer in the exploration of the metal-oxide-semiconductor system, particularly in the area of electrical measurements. His efforts were fundamental in establishing the SISC in its early years, and he served as its technical program chair in 1982. With John Brews, he wrote the definitive book, “MOS Physics and Technology,” published by Wiley Interscience. The SISC Ed Nicollian Award for Best Student Paper is presented to the lead student author or either an oral or poster presentation. The winner is chosen by members of the technical program committee at the end of the SISC. The award consists of a plaque and an honorarium sent to the winner after the conference. To honor the winner, the award is announced at the conference taking place the following year. The 2006 SISC Ed Nicollian Award for Best Student Paper was given to Laurent Thevenod of CEA-LETI/MINATEC, Grenoble, France. The paper was entitled “Characterization of TiN/HfO2/SiO2 MOSFETs by extracting mobility from magnetoresistance measurements” with co-authors M. Cassé, W. Desrat, M. Mouis, G. Reimbold, and F. Boulanger. 38th IEEE Semiconductor Interface Specialists Conference SISC 2007 December 6-8, 2007 Key Bridge Marriott Hotel, Arlington, VA www.ieeesisc.org Conference Agenda Overview Wednesday, December 5, 2007 Registration............................................................................................... 6:00 PM – 9:00 PM Hospitality Room...................................................................................... 7:00 PM – Midnight Thursday, December 6, 2007 Registration............................................................................................... 8:00 AM – 5:00 PM Session 1 – High-k Defects and FET Mobility ....................................... 8:00 AM – 9:20 AM Poster Session 1 – Oxide Defects ............................................................. 9:25 AM – 9:40 AM Session 2 – Reliability............................................................................... 10:10 AM – 11:30 AM Poster Session 2 – Reliability and Non-Volatile Memories................... 11:35 AM – 12:02 PM Session 3 – Advanced High-k Stacks ...................................................... 1:30 PM – 2:30 PM Poster Session 3 – High-Mobility Substrates ......................................... 2:35 PM – 3:02 PM Session 4 – Non-Volatile Memories......................................................... 3:30 PM – 4:50 PM Poster Session 4 – Metal Gates and Work Function Control............... 4:55 PM – 5:16 PM Poster Reception ....................................................................................... 7:00 PM – 10:00 PM Hospitality Room...................................................................................... 9:00 PM – Midnight Friday, December 7, 2007 Registration............................................................................................... 8:00 AM – Noon Session 5 – High-Mobility Substrates I................................................... 8:00 AM – 10:00 AM Session 6 – High-Mobility Substrates II ................................................. 10:30 AM – 12:10 PM Technical Committee / Invited Speaker Luncheon .............................. 12:10 PM – 1:30 PM Optional Rump Sessions .......................................................................... 3:00 PM – 5:30 PM Conference Banquet and Limerick Contest........................................... 7:00 PM – 10:00 PM Hospitality Room...................................................................................... 10:00 PM – Midnight Saturday, December 8, 2007 Session 7 – Theory .................................................................................... 8:20 AM – 10:00 AM Session 6 – Work Function Control........................................................ 10:20 AM – 11:45 AM 38th IEEE Semiconductor Interface Specialists Conference SISC 2007 December 6-8, 2007 Key Bridge Marriott Hotel, Arlington, VA www.ieeesisc.org Conference Program Session 1 - High-k Defects and FET Mobility Thursday, December 6, 2007 Session Chair: M. Frank 8:00 AM Welcome and opening remarks 8:05 AM 1.1 Invited - Electron Transport in Bulk-Si NMOSFET's in Presence of High-k Gate Insulator, K. Maitra1, M. Frank2, V. Narayanan2, B. P. Linder2, E. Gusev3, V. Misra4, E. Cartier2, 1AMD, 2IBM, 3Qualcomm, 4North Carolina State University 8:40 AM 1.2 - Inherent point defects at the epitaxial Lu2O3/(111)Si interface probed by electron spin resonance, A. Stesmans1, P. Somers1, V. V. Afanas’ev1, W. Tian2, L. F. Edge2, D. G. Schlom2, 1Katholieke Universiteit Leuven, Belgium, 2Pennsylvania State University 9:00 AM 1.3 - Trap Energy Levels in HfO2, HfAlyOx, and Al2O3 Thin Films, C.-C. Yeh1, N. Ramaswamy2, N. Rocklein2, D. Gealy2, K. Min3, T. Graettinger2, T. P. Ma1, 1Yale University, 2Micron Technology, 3Intel Corporation Poster Session 1 - Oxide Defects Thursday, December 6, 2007 Session Chair: E. Vogel 9:25 AM P.1 - Effect of electrical bias on paramagnetic defects at high-k (HfO2)x(SiO2)1-x on (100)Si, P. T. Chen, B. B. Triplett, Y. Nishi, J. Chambers, L. Colombo, Stanford University 9:28 AM P.2 - Characterization of Dysprosium oxide (Dy2O3) incorporated HfO2 gate oxide devices, T. Lee, J. C. Lee, S. K. Banerjee, University of Texas at Austin 9:31 AM P.3 - Effect of oxidation pressure on Pb center generation and H termination for thin thickness SiO2 under 2.5 nm, D. Matsushita, K. Kato, K. Muraoka, Y. Mitani, Toshiba Corporation, Japan 9:34 AM P.4 - Effects of Aging on Strained Si-Si Bonds and O Vacancies near the SiO2/Si Interface, X. J. Zhou1, D. M. Fleetwood1, I. Danciu1, A. Dasgupta1, S. A. Francis1, A. D. Touboul2, 1Vanderbilt University, 2University Montpellier, France 9:37 AM P.5 - Effect of STI Mechanical Stress on p-Channel Gate Oxide Integrity, C.-Y. Hsieh1, Y.-T. Lin1, T.-H. Liang1, W.-C. Lee2, J.-B. Bouche1, M.-J. Chen1, 1National Chiao-Tung University, Taiwan, 2TSMC, Taiwan 9:40 AM Break Session 2 - Reliability Thursday, December 6, 2007 Session Chair: P. Lenahan 10:10 AM Opening remarks 10:15 AM 2.1 Invited - Reversible and Irreversible Instabilities in High-k/Metal Gate Stacks, G. Bersuker, SEMATECH 10:50 AM 2.2 - Hot Carrier Injection Study on Sidewall Surfaces of HfSiON/TiN FinFETs, C. D. Young1, K. Matthews2, S. Suthram3, M. M. Hussain1, C. Smith1, R. Harris4, R. Choi1, H.-H. Tseng1, 1SEMATECH, 2ADTF, 3University of Florida, 4AMD 11:10 AM 2.3 - Electron energy dependence of defect generation in high-κ gate stacks, R. O’Connor1, L. Pantisano1, R. Degraeve1, T. Kauerauf1, B. Kaczer1, Ph. J. Roussel1, G. Groeseneken2, 1IMEC, Belgium, 2Katholieke Universiteit Leuven, Belgium Poster Session 2 - Reliability and Non-Volatile Memories Thursday, December 6, 2007 Session Chair: C.-G. Wang 11:35 AM P.6 - Tunneling Component Suppression in Charge Pumping Measurement and Reliability Study for Thin High-k Gated MOSFETs, C.-C. Lu, K.-S. Chang-Liao, C.-Y. Lu, S.-C. Chang, T.-K. Wang, National Tsing Hua University, Taiwan 11:38 AM P.7 - Mechanism for SILC Trap Creation Due to Released Bi-Hydrogen from Gate Oxide Interface, Y. Mitani1, T. Yamaguchi1, H. Satake1, A. Toriumi2, 1Toshiba Corporation, Japan, 2University of Tokyo, Japan 11:41 AM P.8 - PBTI Associated Hot Carrier Characteristics of Nano-scale NMOSFETs with Advanced Gate Stack of Metal Gate/High-k dielectrics, K. T. Lee1,5, C. Y. Kang2, R. Choi2, S. C. Song2, B. H. Lee2,3, O. S. Yoo4,5, H.-D. Lee4,5, Y.-H. Jeong1, 1Pohang University, Korea, 2SEMATECH, 3IBM, 4Chungnam National University, Korea, 5 University of Texas at Austin 11:44 AM P.9 - Impact of the Hard Breakdown detection method on the extraction of the Wearout distribution parameters, S. Sahhaf1, R. Degraeve2, Ph. J. Roussel2, B. Kaczer2, T. Kauerauf2, G. Groeseneken1, 1Katholieke Universiteit Leuven, Belgium, 2IMEC, Belgium 11:47 AM P.10 - Electron tunneling spectroscopy study of traps in Si3N4 for SONOS technology, M. Wang, C.-C. Yeh, C.-C. Ho, T. P. Ma, Yale University 11:50 AM P.11 - A Physical Model of the Switching Mechanism in Oxide Resistive Switching Random Access Memory, L. F. Liu, J. F. Kang, B. Sun, J. F. Yang, B. G. Yan, C. Chen, N. Xu, X. Sun, H. Tang, D. D. Han, Y. Wang, X. Y. Liu, X. Zhang, R. Q. Han, Peking University, China 11:53 AM P.12 - Retention Improvement in fluorinated-HfO2/SiO2 Tunnel stack for Non-Volatile Flash Memory, S. Verma1, P. Majhi2, H. Hwang3, P. Kapur1, G. Bersuker4, K. Parat2, W. Tsai2, K. C.Saraswat1, 1Stanford University, 2Intel Corporation, 3GIST, Korea, 4 SEMATECH 11:59 AM P.13 - NH3 treatments of Hf-based layers for application as NVM active dielectrics, M. Bocquet1,2, G. Molas2, E. Martinez2, H. Grampeix2, F. Martin2, J. P. Colonna2, J. Buckley2, C. Licitra2, N. Rochat2, T. Veyron2, A. M. Papon2, F. Aussenac2, V. Delaye2, M. Gély2, G. Pananakakis1, B. De Salvo2, G. Ghibaudo1, S. Deleonibus2, 1IMEP-CNRS/INPG, France, 2 CEA-LETI, France 12:02 AM Adjourn for lunch Session 3 – Advanced High-k Stacks Thursday, December 6, 2007 Session Chair: M. Takayanagi 1:30 PM Opening remarks 1:35 PM 3.1 Invited - Photoemission Study of Metal/High-k Dielectric Gate Stack, S. Miyazaki1, H. Yoshinaga1, A. Ohta1, Y. Akasaka2, K. Shiraishi3, K. Yamada4, S. Inumiya2, M. Kadoshima2 and Y. Nara2, 1Hiroshima University, Japan, 2Selete, Japan, 3University of Tsukuba, Japan, 4Waseda University, Japan 2:10 PM 3.2 - Electron and hole trapping in oxides: amorphous vs. crystalline materials, A. Kimmel, K. McKenna, J. Gavartin, A. Shluger, University College London, UK Poster Session 3 - High-Mobility Substrates Thursday, December 6, 2007 Session Chair: G. Reimbold 2:35 PM P.14 - First-principles investigation of oxygen adsorption on GaAs(001), M. Scarrozza1,2, G. Pourtois1, M. Houssa1,2, A. Stesmans2, M. Meuris1, M. Heyns1,2, 1IMEC, Belgium, 2Katholieke Universiteit Leuven, Belgium 2:38 PM P.15 - InAs and In0.8Ga0.2As Field-Effect-Transistors with Al2O3 Gate Dielectric Deposited by Molecular-Atom-Deposition (MAD), N. Li1, E. S. Harmon1, D. Salzman1, X. W. Wang2, T. P. Ma2, 1Lightspin Technologies, Inc., 2Yale University 2:41 PM P.16 - Electrical and Chemical Properties of ALD Grown HfO2 Films on GeOxNy/Ge Substrates after Thermal Treatment, Y. Oshima1,3, Y. Sun2, D. Kuzum1, T. Sugawara3, K. C. Saraswat1, P. Pianetta2, P. C. McIntyre1, 1Stanford University, 2Stanford Synchrotron Radiation Laboratory, 3Tokyo Electron Ltd, Japan 2:44 PM P.17 - GaAs MOS C-V Measurements - Surface Chemistry and Device Physics Perspective, P. D. Ye1, J. M. Woodall1, T. Yang1, Y. Xuan1, D. Zemlyanov1, T. Shen1, Y. Q. Wu1, R. M. Wallace2, 1Purdue University, 2University of Texas at Dallas 2:47 PM P.18 - Charge pumping characterization of germanium MOSFETs, K. Martens2, B. Kaczer1, T. Grasser3, B. De Jaeger1, M. Meuris1, G. Groeseneken2, H. Maes2, 1IMEC, Belgium, 2Katholieke Universiteit Leuven, Belgium, 3Technische Universität Wien, Austria 2:50 PM P.19 - ALD high-k dielectric growth on high-mobility graphene surface, Y. Xuan, Y. Q. Wu, T. Shen, P. D. Ye, Purdue University 2:53 PM P.20 - Atomic Layer Deposition of Al2O3 and HfO2 on GaAs substrates, D. Shahrjerdi, S. Coffee, J. G. Ekerdt, S. K. Banerjee, University of Texas at Austin 2:59 PM P.21 - Study of surface preparation for high-k dielectrics on GaAs, F. S. AguirreTostado1, M. Milojevic1, S. McDonnell1, R. Contreras-Guerrero1, C. L. Hinkle1, K. J. Choi1, J. Kim1, E. M. Vogel1, A. Herrera-Gomez1, R. M. Wallace1, T. Yang2, Y. Xuan2, P. D. Ye2, 1 University of Texas at Dallas, 2Purdue University 3:02 PM Break Session 4 - Non-Volatile Memories Thursday, December 6, 2007 Session Chair: B.-H. Lee 3:30 PM Opening remarks 3:35 PM 4.1 Invited - Resistance Switching Characteristics of Doped Metal Oxide for NonVolatile Memory Applications, D. S. Lee, W. Xiang, R. Dong, D. J. Seong, H. Hwang, GIST, Korea 4:10 PM 4.2 - Dielectric Layer Quality Effect on Charge Transport Mechanisms in a Localized Trapping-Based Nonvolatile Memory Device, Y. Shur1, Y. Shacham-Diamand1, B. Eitan2, A. Shappir2, 1Tel Aviv University, Israel, 2Saifun Semiconductors, Israel 4:30 PM 4.3 - Al2O3 as the Interpoly or Blocking Dielectric In Flash Memories, X. W. Wang, S.I. Shim, T. P. Ma, Yale University Poster Session 4 - Metal Gates and Work Function Control Thursday, December 6, 2007 Session Chair: P. D. Ye 4:55 PM P.22 - Fluorine in Metal Gate / High-k Gate Stacks: Diffusion and Electrically Active States, M. M. Frank, E. A. Cartier, R. Jha, V. R. Deline, IBM 4:58 PM P.23 - Oxygen Transfer from Metal Gate to High-k Gate Dielectric Stacks: Interface Structure & Property Changes, J.-H. Ha1, H. AlShareef2, J. Chambers2, Y. Sun3, P. Pianetta3, P. C. McIntyre1, L. Colombo2, 1Stanford University, 2Texas Instruments, 3 Stanford Synchrotron Radiation Laboratory 5:01 PM P.24 - Investigation of the Work Function of TiN on High-K Dielectric / p-type Si Gate Stack Structures Using Photoemission Spectroscopy, J. Choung1, K. Choi2, J. E. Rowe1, H. Jeon1,3, R. J. Nemanich1,4, 1North Carolina State University, 2SEMATECH, 3Hanyang University, Korea, 4Arizona State University 5:04 PM P.25 - Ab initio Study of Metal Gate Electrode - Gate Oxide Interface Work Function, B. Magyari-Kope1, Y. Nishi1, K. Cho2, 1Stanford University, 2University of Texas at Dallas 5:07 PM P.26 - Effect of Gadolinium (Gd) incorporation in NiSi FUSI gate / High-k dielectric via Electrical and Structural Modification of the Gate stack, B. Lee, S. R. Novak, N. Biswas, V. Misra, North Carolina State University 5:10 PM P.27 - The effect of high pressure post metallization annealing in dilute oxygen ambient on effective work function of metal gate, J.-M. Lee1, H. Park1, M. Hasan1, M. Jo1, M. Chang1, R. Choi2, B. H. Lee2,3, H. Hwang1, 1GIST, Korea, 2SEMATECH, 3IBM 5:13 PM P.28 - Investigations on PVD and CVD TiN workfunctions for advanced MOS applications, C. Leroux1, M. Charbonnier1, V. Cosnier2, P. Besson2, J. Mitard1,2, G. Reimbold1, F. Martin1, 1CEA-LETI, France, 2STMicroelectronics, France 5:16 PM Adjourn 7:00 PM Poster Reception Session 5 - High-Mobility Substrates I Friday, December 7, 2007 Session Chair: M. Fischetti 8:00 AM Morning announcements 8:05 AM 5.1 Invited - Ge and III/V: the CMOS of the Future, M. Heyns1,2, C. Adelmann1, F. Bellenger1, G. Brammertz1, D. Brunco3, M. Caymax1, B. De Jaeger1, A. Delabie1, G. Eneman1, M. Houssa1, B. Kaczer1, D. Lin4, K. Martens1, M. Meuris1, J. Mittard1, K. Opsomer1, G. Pourtois1, A. Satta1, M. Scarrozza1, E. Simoen1, S. Sioncke1, L. Souriau1, V. Terzieva1, S. Van Elshocht1, 1IMEC, Belgium, 2Katholieke Universiteit Leuven, Belgium, 3 Intel Corporation, 4Purdue University 8:40 AM 5.2 - Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2, V. V. Afanas’ev1, A. Stesmans1, A. Delabie2, M. Houssa2, 1Katholieke Universiteit Leuven, Belgium, 2IMEC, Belgium 9:00 AM 5.3 - Elimination of Ge-O bonding in interfacial transition regions between Ge and Hfbased gate dielectrics: a necessary requirement of low defect density interfaces between n-type Ge and oxide dielectrics, G. Lucovsky1, S. Lee1, J. P. Long1, H. Seo1, J. Luning2, 1North Carolina State University, 2Stanford Synchrotron Radiation Laboratory 9:20 AM 5.4 - Investigation of Poor Carrier Transport in Germanium NFETs, A. Khakifirooz, A. Ritenour, J. Hennessy, D. A. Antoniadis, Massachusetts Institute of Technology 9:40 AM 5.5 - Charge Pumping and Carrier Separation Characteristics of High-κ Gated SiGe Channel p-MOSFETs, L. Y. Song1, A. Lubow1, C. Xiong1, X. Pan1, T. P. Ma1, R. Harris2, P. Majhi2, P. Kirsch2, H.-H. Tseng2, 1Yale University, 2SEMATECH 10:00 AM Break Session 6 - High-Mobility Substrates II Friday, December 7, 2007 Session Chair: R. Nemanich 10:30 AM Opening remarks 10:35 AM 6.1 Invited - Structure and Composition of High-k Films on Alternative Channel Materials, L. Goncharova, O. Celik, C.-L. Hsueh, T. Feng, E. Garfunkel and T. Gustafsson, Rutgers University 11:10 AM 6.2 - Influence of the substrate orientation on the electrical and material properties of GaAs MOSFETs Using HfO2 and Silicon Interface Passivation Layer, I.-J. Ok1, H. Kim1, M. Zhang1, F. Zhu1, S. Park1, J. Yum1, H. Zhao1, D. Garcia2, P. Majhi2, J. C. Lee1, 1 University of Texas at Austin, 2SEMATECH 11:30 AM 6.3 - GaAs MOS Frequency Dispersion Reduction by Surface Oxide Removal and Passivation, C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, R. M. Wallace, University of Texas at Dallas 11:50 AM 6.4 - Enhancement-mode GaAs MOS-HEMTs with ALD Al2O3, HfO2, HfO2/Al2O3 laminate as high-k gate dielectrics, H. C. Lin, T. Yang, H. Sharifi, S. K. Kim, Y. Xuan, T. Shen, S. Mohammadi, P. D. Ye, Purdue University 12:10 PM Adjourn for lunch ; Technical Committee / Invited Speaker Luncheon 3:00 PM Optional Rump Sessions – Topics TBD 7:00 PM Conference Banquet and Limerick Contest Session 7 - Theory Saturday, December 8, 2007 Session Chair: K. Shiraishi 8:20 AM Morning announcements 8:25 AM 7.1 Invited - First Principles Investigation of Defects at Semiconductor-Oxide Interfaces, A. Pasquarello, EPFL, Switzerland 9:00 AM 7.2 - Band-gap and permittivity change at high-k gate stack interfaces - device perspective, S. Markov1,2, S. Roy1, C. Fiegna2, E. Sangiorgi2, A. Asenov1, 1University of Glasgow, UK, 2University of Bologna, Italy 9:20 AM 7.3 - Defect Fermi level pinning model for HfO2 on p-Metal gates, J. Robertson, Cambridge University, UK 9:40 AM 7.4 - Role of Te on the effective work function of Mo/HfO2, K. Xiong1, P. D. Delugas1, V. Fiorentini2, J. Robertson3, D. M. Liu3, G. Pourtois4, J. C. Hooker1, 1NXP Semiconductors, Belgium, 2Universita di Cagliari, Italy, 3Cambridge University, UK, 4IMEC, Belgium 10:00 AM Break Session 8 - Work Function Control Saturday, December 8, 2007 Session Chair: J. Robertson 10:20 AM Opening remarks 10:25 AM 8.1 - Origin of Threshold Voltage Shift and EOT Change in TiN Gate MOSFETs Analyzed by Positron Annihilation Spectroscopy and Backside X-ray Photoelectron Spectroscopy, T. Matsuki1, T. Watanabe1, T. Miura1, N. Mise1, T. Eimori1, Y. Nara1, Y. Ohji1, K. Yamada2, A. Uedono3, 1Selete, Japan, 2Waseda University, Japan, 3University of Tsukuba, Japan 10:45 AM 8.2 - Mechanism of Vfb shift in SiO2 and Hf-based gate dielectric stacks by capping Gd2O3, M. Zhang, F. Zhu, I.-J. Ok, H.-S. Kim, H. Zhao, J. C. Lee, University of Texas at Austin 11:05 AM 8.3 - A Comprehensive Study on Effective Work Function Modulation of Metal/Highk Gate Stacks, T. Hosoi1, Y. Kita1, Y. Kagei1, T. Shimura1, H. Watanabe1, K. Shiraishi2, Y. Nara3, K. Yamada4, 1Osaka University, Japan, 2University of Tsukuba, Japan, 3Selete, Japan, 4Waseda University, Japan 11:25 AM 8.4 - A Significant Shift of Strongly Pinned Charge Neutrality Level at Metal/Germanium Interface by Inserting Ultra-thin Oxides, T. Nishimura, K. Kita, A. Toriumi, University of Tokyo, Japan 11:45 AM Closing remarks 38th IEEE Semiconductor Interface Specialists Conference SISC 2007 December 6-8, 2007 Key Bridge Marriott Hotel, Arlington, VA www.ieeesisc.org Author Index Adelmann C. 5.1 Chen M.-J. P.5 Afanas’ev V. V. 1.2, 5.2 Chen P. T. P.1 Aguirre-Tostado F. S. 6.3, P.21 Cho K. P.25 Akasaka Y. 3.1 Choi K. P.24 AlShareef H. P.23 Choi K. J. 6.3, P.21 Antoniadis D. A. 5.4 Choi R. 2.2, P.27, P.8 Asenov A. 7.2 Choung J. P.24 Aussenac F. P.13 Coffee S. P.20 Banerjee S. K. P.2, P.20 Colombo L. P.1, P.23 Bellenger F. 5.1 Colonna J. P. P.13 Bersuker G. 2.1, P.12 Contreras-Guerrero R. P.21 Besson P. P.28 Cosnier V. P.28 Biswas N. P.26 Danciu I. P.4 Bocquet M. P.13 Dasgupta A. P.4 Bouche J.-B. P.5 De Jaeger B. 5.1, P.18 Brammertz G. 5.1 De Salvo B. P.13 Brunco D. 5.1 Degraeve R. 2.3, P.9 Buckley J. P.13 Delabie A. 5.1, 5.2 Cartier E. 1.1, P.22 Delaye V. P.13 Caymax M. 5.1 Deleonibus S. P.13 Celik O. 6.1 Deline V. R. P.22 Chambers J. P.1, P.23 Delugas P. D. 7.4 Chang M. P.27 Dong R. 4.1 Chang S.-C. P.6 Edge L. F. 1.2 Chang-Liao K.-S. P.6 Eimori T. 8.1 Charbonnier M. P.28 Eitan B. 4.2 Chen C. P.11 Ekerdt J. G. P.20 Eneman G. 5.1 Inumiya S. 3.1 Feng T. 6.1 Jeon H. P.24 Fiegna C. 7.2 Jeong Y.-H. P.8 Fiorentini V. 7.4 Jha R. P.22 Fleetwood D. M. P.4 Jo M. P.27 Francis S. A. P.4 Kaczer B. 2.3, 5.1, P.18, P.9 Frank M. 1.1, P.22 Kadoshima M. 3.1 Garcia D. 6.2 Kagei Y. 8.3 Garfunkel E. 6.1 Kang C. Y. P.8 Gavartin J. 3.2 Kang J. F. P.11 Gealy D. 1.3 Kapur P. P.12 Ghibaudo G. P.13 Kato K. P.3 Goncharova L. 6.1 Kauerauf T. 2.3, P.9 Graettinger T. 1.3 Khakifirooz A. 5.4 Grampeix H. P.13 Kim H. 6.2, 8.2 Grasser T. P.18 Kim J. 6.3, P.21 Groeseneken G. 2.3, P.18, P.9 Kim S. K. 6.4 Gusev E. 1.1 Kimmel A. 3.2 Gustafsson T. 6.1 Kirsch P. 5.5 Gély M. P.13 Kita K. 8.4 Ha J.-H. P.23 Kita Y. 8.3 Han D. D. P.11 Kuzum D. P.16 Han R. Q. P.11 Lee B. 6.3, P.26 Harmon E. S. P.15 Lee B. H. P.27, P.8 Harris R. 2.2, 5.5 Lee D. S. 4.1 Hasan M. P.27 Lee H.-D. P.8 Hennessy J. 5.4 Lee J. C. 6.2, 8.2, P.2 Herrera-Gomez A. P.21 Lee J.-M. P.27 Heyns M. 5.1, P.14 Lee K. T. P.8 Hinkle C. L. 6.3, P.21 Lee S. 5.3 Ho C.-C. P.10 Lee T. P.2 Hooker J. C. 7.4 Lee W.-C. P.5 Hosoi T. 8.3 Leroux C. P.28 Houssa M. 5.1, 5.2, P.14 Li N. P.15 Hsieh C.-Y. P.5 Liang T.-H. P.5 Hsueh C.-L. 6.1 Licitra C. P.13 Hussain M. M. 2.2 Lin D. 5.1 Hwang H. 4.1, P.12, P.27 Lin H. C. 6.4 Lin Y.-T. P.5 Muraoka K. P.3 Linder B. P. 1.1 Nara Y. 3.1, 8.1, 8.3 Liu D. M. 7.4 Narayanan V. 1.1 Liu L. F. P.11 Nemanich R. J. P.24 Liu X. Y. P.11 Nishi Y. P.1, P.25 Long J. P. 5.3 Nishimura T. 8.4 Lu C.-C. P.6 Novak S. R. P.26 Lu C.-Y. P.6 Ohji Y. 8.1 Lubow A. 5.5 Ohta A. 3.1 Lucovsky G. 5.3 Ok I.-J. 6.2, 8.2 Luning J. 5.3 Opsomer K. 5.1 Ma T. P. 1.3, 4.3, 5.5, P.10, P.15 Oshima Y. P.16 Maes H. P.18 O’Connor R. 2.3 Magyari-Kope B. P.25 Pan X. 5.5 Maitra K. 1.1 Pananakakis G. P.13 Majhi P. 5.5, 6.2, P.12 Pantisano L. 2.3 Markov S. 7.2 Papon A. M. P.13 Martens K. 5.1, P.18 Parat K. P.12 Martin F. P.13, P.28 Park H. P.27 Martinez E. P.13 Park S. 6.2 Matsuki T. 8.1 Pasquarello A. 7.1 Matsushita D. P.3 Pianetta P. P.16, P.23 Matthews K. 2.2 Pourtois G. 5.1, 7.4, P.14 McDonnell S. 6.3, P.21 Ramaswamy N. 1.3 McIntyre P. C. P.16, P.23 Reimbold G. P.28 McKenna K. 3.2 Ritenour A. 5.4 Meuris M. 5.1, P.14, P.18 Robertson J. 7.3, 7.4 Milojevic M. 6.3, P.21 Rochat N. P.13 Min K. 1.3 Rocklein N. 1.3 Mise N. 8.1 Roussel Ph. J. 2.3, P.9 Misra V. 1.1, P.26 Rowe J. E. P.24 Mitani Y. P.3, P.7 Roy S. 7.2 Mitard J. P.28 Sahhaf S. P.9 Mittard J. 5.1 Salzman D. P.15 Miura T. 8.1 Sangiorgi E. 7.2 Miyazaki S. 3.1 Saraswat K. C. P.12, P.16 Mohammadi S. 6.4 Satake H. P.7 Molas G. P.13 Satta A. 5.1 Scarrozza M. 5.1, P.14 Uedono A. 8.1 Schlom D. G. 1.2 Van Elshocht S. 5.1 Seo H. 5.3 Verma S. P.12 Seong D. J. 4.1 Veyron T. P.13 Shacham-Diamand Y. 4.2 Vogel E. M. 6.3, P.21 Shahrjerdi D. P.20 Wallace R. M. 6.3, P.17, P.21 Shappir A. 4.2 Wang M. P.10 Sharifi H. 6.4 Wang T.-K. P.6 Shen T. 6.4, P.17, P.19 Wang X. W. 4.3, P.15 Shim S.-I. 4.3 Wang Y. P.11 Shimura T. 8.3 Watanabe H. 8.3 Shiraishi K. 3.1, 8.3 Watanabe T. 8.1 Shluger A. 3.2 Woodall J. M. P.17 Shur Y. 4.2 Wu Y. Q. P.17, P.19 Simoen E. 5.1 Xiang W. 4.1 Sioncke S. 5.1 Xiong C. 5.5 Smith C. 2.2 Xiong K. 7.4 Somers P. 1.2 Xu N. P.11 Song L. Y. 5.5 Xuan Y. 6.4, P.17, P.19, P.21 Song S. C. P.8 Yamada K. 3.1, 8.1, 8.3 Sonnet A. M. 6.3 Yamaguchi T. P.7 Souriau L. 5.1 Yan B. G. P.11 Stesmans A. 1.2, 5.2, P.14 Yang J. F. P.11 Sugawara T. P.16 Yang T. 6.4, P.17, P.21 Sun B. P.11 Ye P. D. 6.4, P.17, P.19, P.21 Sun X. P.11 Yeh C.-C. 1.3, P.10 Sun Y. P.16, P.23 Yoo O. S. P.8 Suthram S. 2.2 Yoshinaga H. 3.1 Tang H. P.11 Young C. D. 2.2 Terzieva V. 5.1 Yum J. 6.2 Tian W. 1.2 Zemlyanov D. P.17 Toriumi A. 8.4, P.7 Zhang M. 6.2, 8.2 Touboul A. D. P.4 Zhang X. P.11 Triplett B. B. P.1 Zhao H. 6.2, 8.2 Tsai W. P.12 Zhou X. J. P.4 Tseng H.-H. 2.2, 5.5 Zhu F. 6.2, 8.2 38th IEEE Semiconductor Interface Specialists Conference SISC 2007 December 6-8, 2007 Key Bridge Marriott Hotel, Arlington, VA www.ieeesisc.org Affiliation Index ADTF 2.2 AMD 1.1, 2.2 Arizona State University P.24 Cambridge University, UK 7.3, 7.4 CEA-LETI, France P.13, P.28 Chungnam National University, Korea P.8 EPFL, Switzerland 7.1 GIST, Korea 4.1, P.12, P.27 Hanyang University, Korea P.24 Hiroshima University, Japan 3.1 IBM 1.1, P.22, P.27, P.8 IMEC, Belgium 2.3, 5.1, 5.2, 7.4, P.14, P.18, P.9 IMEP-CNRS/INPG, France P.13 Intel Corporation 1.3, 5.1, P.12 Katholieke Universiteit Leuven, Belgium 1.2, 2.3, 5.1, 5.2, P.14, P.18, P.9 Lightspin Technologies, Inc. P.15 Massachusetts Institute of Technology 5.4 Micron Technology 1.3 National Chiao-Tung University, Taiwan P.5 National Tsing Hua University, Taiwan P.6 North Carolina State University 1.1, 5.3, P.24, P.26 NXP Semiconductors, Belgium 7.4 Osaka University, Japan 8.3 Peking University, China P.11 Pennsylvania State University 1.2 Pohang University, Korea P.8 Purdue University 5.1, 6.4, P.17, P.19, P.21 Qualcomm 1.1 Rutgers University 6.1 Saifun Semiconductors, Israel 4.2 Selete, Japan 3.1, 8.1, 8.3 SEMATECH 2.1, 2.2, 5.5, 6.2, P.12, P.24, P.27, P.8 Stanford Synchrotron Radiation Laboratory 5.3, P.16, P.23 Stanford University P.1, P.12, P.16, P.23, P.25 STMicroelectronics, France P.28 Technische Universität Wien, Austria P.18 Tel Aviv University, Israel 4.2 Texas Instruments P.23 Tokyo Electron Ltd, Japan P.16 Toshiba Corporation, Japan P.3, P.7 TSMC, Taiwan P.5 Universita di Cagliari, Italy 7.4 University College London, UK 3.2 University Montpellier, France P.4 University of Bologna, Italy 7.2 University of Florida 2.2 University of Glasgow, UK 7.2 University of Texas at Austin 6.2, 8.2, P.2, P.20, P.8 University of Texas at Dallas 6.3, P.17, P.21, P.25 University of Tokyo, Japan 8.4, P.7 University of Tsukuba, Japan 3.1, 8.1, 8.3 Vanderbilt University P.4 Waseda University, Japan 3.1, 8.1, 8.3 Yale University 1.3, 4.3, 5.5, P.10, P.15