UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * RDS(ON) < 1.5Ω @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-TA3-T 6N60G-TA3-T 6N60L-TF3-T 6N60G-TF3-T 6N60L-TF1-T 6N60G-TF1-T 6N60L-TF2-T 6N60G-TF2-T 6N60L-TF3T-T 6N60G-TF3T-T 6N60L-TMS-T 6N60G-TMS-T 6N60L-TQ2-T 6N60G-TQ2-T 6N60L-TQ2-R 6N60G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251S TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel 1 of 7 QW-R502-117. L 6N60 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-117. L 6N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 6.2 A Continuous Drain Current ID 6.2 A Pulsed Drain Current (Note 2) IDM 24.8 A Single Pulsed (Note 3) EAS 440 mJ Avalanche Energy 13 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns TO-220/TO-263 125 W TO-220F/TO-220F1 40 W Power Dissipation PD TO-220F3 TO-220F2 42 W TO-251S 55 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 25mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-220F3/TO-263 TO-251S TO-220/TO-263 TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251S SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA RATING 62.5 UNIT °C/W 110 1.0 θJC 3.2 °C/W 2.97 2.27 3 of 7 QW-R502-117. L 6N60 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS VGS=0V, ID=250μA 600 V VDS=600V, VGS=0V 10 μA Drain-Source Leakage Current IDSS VDS=480V, VGS=0V, TJ =125°C 10 μA Forward VG=30V, VDS=0V 100 nA Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.53 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.1A 1.0 1.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 770 1000 pF V =25V, V =0V, f=1.0 MHz Output Capacitance COSS 95 120 pF DS GS Reverse Transfer Capacitance CRSS 10 13 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 40 50 ns Turn-On Rise Time tR 70 150 ns VDD=300V, ID =6.2A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 40 90 ns 80 100 ns Turn-Off Fall Time tF Total Gate Charge QG 20 25 nC VDS=480V, ID=6.2A, VGS=10V Gate-Source Charge QGS 4.9 nC (Note 1, 2) 9.4 nC Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=6.2 A 1.4 V Maximum Continuous Drain-Source Diode IS 6.2 A Forward Current Maximum Pulsed Drain-Source Diode ISM 24.8 A Forward Current Reverse Recovery Time trr VGS=0V, IS=6.2A, 290 ns dIF/dt =100 A/μs (Note 1) Reverse Recovery Charge QRR 2.35 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-117. L 6N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-117. L 6N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-117. L 6N60 Power MOSFET Drain Current,ID (µA) Drain Current,ID (µA) Drain Current,ID (A) Drain Current, ID (A) TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-117. L