Datasheet

UNISONIC TECHNOLOGIES CO., LTD
11N40
Power MOSFET
11.4A, 400V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The 11N40 uses UTC’s advanced proprietary, planar stripe,
DMOS technology to provide excellent RDS(ON), low gate charge
and operation with low gate voltages. This device is suitable for
use as a load switch or in PWM applications.
„
FEATURES
* RDS(ON) = 0.52Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 27 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 20 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
11N40L-TA3-T
11N40G-TA3-T
TO-220
11N40L-TF3-T
11N40G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
1
G
G
Pin Assignment
2
3
D
S
D
S
Packing
Tube
Tube
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QW-R502-219.D
11N40
„
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (TC = 25℃)
ID
11.4
A
Pulsed Drain Current (Note 2)
IDM
46
A
Avalanche Current (Note 2)
IAR
11.4
A
Single Pulsed(Note 3)
EAS
520
mJ
Avalanche Energy
14.7
Repetitive(Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
147
W
PD
Derate above 25℃
1.18
W/℃
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=7mH, IAS=11.4A, VDD=50V, RG=25Ω, Satarting TJ=25°C.
4. ISD ≤ 11.4A, di/dt ≤ 200A/μs, VDD ≤BVDSS, Satarting TJ=25°C.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
62.5
0.85
UNIT
℃/W
℃/W
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„
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
BVDSS
VGS =0 V, ID =250 µA
VDS =400V, VGS =0 V
Zero Gate Voltage Drain Current
IDSS
VDS =320V, TC =125°C
Gate-Body Leakage Current
IGSS
VDS =0 V, VGS = ±30 V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID =250 µA, Referenced to25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID =250 µA
Static Drain-Source On-Resistance
RDS(ON) VGS = 10 V, ID = 5.7 A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =25V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=200V, ID=11.4A,
Turn-ON Rise Time
tR
RGEN =25Ω(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDS =320V, VGS =10V,
Gate Source Charge
QGS
ID =11.4A (Note 1, 2)
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=11.4 A,VGS=0V
Maximum Continuous Drain-Source
IS
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0V, dIF /dt = 100 A/ s,
IS =11.4A (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
2. Independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP MAX UNIT
400
V
1
10
±100
0.42
2.0
µA
nA
mV/℃
4.0
0.42 0.52
V
Ω
1100 1400
180 240
20
30
pF
30
100
60
60
27
7.3
12.3
70
210
130
130
35
ns
nC
1.5
V
11.4
A
46
240
1.8
ns
µC
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11N40
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Power MOSFET
TEST CIRCUIT
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
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Time
Fig. 4B Unclamped Inductive Switching Waveforms
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11N40
„
Power MOSFET
TEST CIRCUIT(Cont.)
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
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Forward Voltage Drop
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„
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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