Datasheet

UNISONIC TECHNOLOGIES CO., LTD
15N40
Preliminary
Power MOSFET
15A, 400V N-CHANNEL
POWER MOSFET
1
„
The UTC 15N40 is an N-channel mode power MOSFET using UTC’s
advanced technology to provide customers with planar stripe and DMOS
technology. This technology allows a minimum on-state resistance and
superior switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC 15N40 is generally applied in high efficiency switch mode
power supplies.
„
TO-220
DESCRIPTION
1
TO-220F1
FEATURES
* RDS(ON)=0.35Ω @ VGS=10V,ID=7.5A
* Low Gate Charge (Typical 28nC)
* Low CRSS (Typical 17pF)
* High Switching Speed
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
15N40L-TA3-T
15N40G-TA3-T
TO-220
15N40L-TF1-T
15N40G-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified.) (Note 5)
PARAMETER
Drain to Source Voltage
Gate-Source Voltage
RATINGS
UNIT
400
V
±30
V
TC=25°C
15
A
ID
Continuous
Drain Current
TC=100°C
9
A
Pulsed (Note 2)
IDM
60
A
Avalanche Current (Note 2)
IAR
15
A
Single Pulsed (Note 3)
EAS
731
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
17
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
15
V/ns
Power Dissipation (TC=25°C)
170
W
PD
Derate above 25°C
1.45
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; Pulse width limited by maximum junction temperature.
3. L=6.5mH, IAS=15A. VDD=50V, RG=25Ω, Starting TJ=25°C
4. ISD≤15A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature
„
SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
62.5
0.7
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
SYMBOL
BVDSS
ID=250µA, VGS=0V, TJ=25°C
MIN TYP MAX UNIT
400
∆BVDSS/∆TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
Gate- Source Leakage Current
TEST CONDITIONS
IDSS
Forward
Reverse
IGSS
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0.5
VDS=400V, VGS=0V,
VDS=320V, TC=125°C
VGS=+30V, VDS=0V
VGS=-30V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=7.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=320V, VGS=10V, ID=15A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=200V, ID=15A, RG=25Ω
(Note
1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=15A, VGS=0V
Body Diode Reverse Recovery Time
trr
ISD=15A, VGS=0V, dIF/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2%.
2. Essentially Independent of Operating Temperature Typical Characteristics
UNISONIC TECHNOLOGIES CO., LTD
V
2.0
V/°C
1
10
+100
-100
µA
µA
nA
nA
4.0
0.26 0.35
V
Ω
1310 1750
210 280
17
25
pF
pF
pF
28
8
12
26
55
72
40
36
62
120
154
90
15
60
1.4
333
3.24
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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15N40
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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