Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UFR9120
Preliminary
Power MOSFET
P CHANNEL POWER MOSFET
„
DESCRIPTION
The UTC UFR9120 is a P-channel power MOSFET using UTC’s
advanced processing technology to provide customers a minimum
on-state resistance and high switching speed
„
FEATURES
* Fully Avalanche Rated
* High Switching Speed
* extremely Low On-Resistance
* Surface Mount
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UFR9120L-TN3-R
UFR9120G-TN3-R
UFR9120L-TN3-T
UFR9120G-TN3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-252
1
G
TO-252
G
Pin Assignment
2
3
D
S
D
S
Packing
Tape Reel
Tube
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UFR9120
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
-100
V
±20
V
TC=25°C
-6.6
A
Continuous
ID
Drain Current, VGS@-10V
TC=100°C
-4.2
A
Pulsed (Note 2)
IDM
-26
A
Avalanche Current (Note 2)
IAR
-6.6
A
Single Pulsed (Note 3)
EAS
100
mJ
Avalanche Energy
4.0
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.0
V/ns
Power Dissipation TC=25°C
40
W
PD
Linear Derating Factor
0.32
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; pulse width limited by max. junction temperature.(See Fig.11)
3. Starting TJ=25°C, L=13mH RG=25Ω, IAS=-3.9A (See Fig.12)
4. ISD ≤ -4.0A, di/dt ≤300A/μs,VDD ≤ V(BR)DSS, TJ ≤ 25°C
„
SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
110
Junction to Case
θJC
3.1
Note: 1. For recommended footprint and soldering techniques refer to application note
UNISONIC TECHNOLOGIES CO., LTD
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UNIT
°C/W
°C/W
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UFR9120
„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
ID=250µA, VGS=0V
-100
IGSS
UNISONIC TECHNOLOGIES CO., LTD
V
-0.11
VDS=-100V, VGS=0V
VDS=-80V, VGS=0V , TJ=150°C
VGS=+20V
VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-3.9A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-10V, VDS=-80V, ID=-4.0A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=-50V, ID= -4.0A, RG= 12Ω,
R
Turn-OFF Delay Time
tD(OFF)
D=12Ω (Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
MOSFET symbol showing the
Maximum Body-Diode Pulsed
integral reverse p-n junction diode
ISM
Current (Note 1)
Drain-Source Diode Forward Voltage
VSD
IS=-3.9A, VGS=0V, TJ =25°C
IF=-4.0A, VGS=0V, di/dt = 100A/µs,
Body Diode Reverse Recovery Time
tRR
TJ =25°C (Note 1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
2. Essentially independent of operating temperature.
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MIN TYP MAX UNIT
△BVDSS/△TJ Reference to 25°C, ID=-1mA
IDSS
Forward
Reverse
TEST CONDITIONS
V/°C
-25
µA
-250
+100 nA
-100 nA
-2.0
-4.0
0.48
350
110
70
pF
pF
pF
27
5.0
15
nC
nC
nC
ns
ns
ns
ns
-6.6
A
-26
A
-2.0
150
630
V
ns
nC
14
47
28
31
100
420
V
Ω
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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UFR9120
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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