LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C TEL:(02)22677686(REP) FAX:(02)22675286,(02)22695616 DUAL DIGIT LED DISPLAY (0.36 Inch) LDD335/65-XX/RP10 DATA SHEET DOC. NO : QW0905- LDD335/65-XX/RP10 REV. : A DATE : 24 - Nov - 2004 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD335/65-XX/RP10 Page 1/7 Package Dimensions 15.0(0.591") DIG.1 7.2(0.283") DIG.2 14.0 (0.551") 9.14 (0.36") 10.16 (0.4") ψ1.0(0.039") A LDD335/65-XX/RP10 LIGITEK F G E 7.2 (0.283") B C D DP □ 0.51 TYP PIN NO.1 10.0 ±0.5 2.54X4=10.16 (0.4") Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LDD335/65-XX/RP10 Internal Circuit Diagram LDD3355-XX/RP10 5 10 DIG.1 DIG.2 A B C D E F G DP A B C D E F G DP 3 9 8 6 7 4 1 2 LDD3365-XX/RP10 10 DIG.1 5 DIG.2 A B C D E F G DP A B C D E F G DP 3 9 8 6 7 4 1 2 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LDD335/65-XX/RP10 Electrical Connection PIN NO.1 LDD3355-XX/RP10 PIN NO.1 LDD3365-XX/RP10 1 Anode G 1 Cathode G 2 Anode DP 2 Cathode DP 3 Anode A 3 Cathode G 4 Anode F 4 Cathode F 5 Common Cathode Dig.2 5 Common Anode Dig.2 6 Anode D 6 Cathode D 7 Anode E 7 Cathode E 8 Anode C 8 Cathode C 9 Anode B 9 Cathode B 10 Common Cathode Dig.1 10 Common Anode Dig.1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD335/65-XX/RP10 Page 4/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SR Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO △λ Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. Common Anode LDD3355-XX/RP10 GaAlAs LDD3365-XX/RP10 Electrical λP (nm) 660 Red 20 1.5 1.7 Common Cathode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2 The luminous intensity data did not including ±15% testing tolerance 2.4 1.75 2.8 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LDD335/65-XX/RP10 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LDD335/65-XX/RP10 Typical Electro-Optical Characteristics Current SR CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 1.0 5.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature(℃) Ambient Temperature( ℃ ) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LDD335/65-XX/RP10 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃ &-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11