Datasheet

UNISONIC TECHNOLOGIES CO., LTD
6N80
Power MOSFET
6.0A, 800V N-CHANNEL
POWER MOSFET
1

DESCRIPTION
The UTC 6N80 is a N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 6N80 is universally applied in high efficiency switch
mode power supply.

1
1
TO-220F
TO-220F1
FEATURES
* RDS(on) = 2.0Ω @VGS = 10 V
* Improved dv/dt capability
* Fast switching
* 100% avalanche tested

TO-220
1
TO-262
SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
6N80L-TA3-T
6N80G-TA3-T
6N80L-TF3-T
6N80G-TF3-T
6N80L-TF1-T
6N80G-TF1-T
6N80L-T2Q-T
6N80G-T2Q-T
Pin Assignment: G: Gate
D: Drain
S: Source
6N80L-TA3-T
Package
TO-220
TO-220F
TO-220F1
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
(1) T: Tube
(1) Packing Type
(2) Package Type
(3) Green Package
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1
T2Q: TO-262
(3) L: Lead Free, G: Halogen Free and Lead Free
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QW-R502-500.C
6N80

Power MOSFET
MARKING
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www.unisonic.com.tw
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6N80

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
6
A
Drain Current (Note 2)
Pulsed
IDM
22
A
Single Pulsed (Note 3)
EAS
680
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
15.8
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
138
W
Power Dissipation
PD
TO-220F/TO220F1
51
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 37mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 5.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
TO-220/TO-262
Junction to Case
TO-220F/TO220F1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62.5
0.9
2.45
UNIT
°C/W
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
BVDSS
ID=250µA, VGS=0V
△BVDSS/△TJ Reference to 25°C, ID=250µA
VDS=800V, VGS=0V
IDSS
VDS=640V, TC=125°C
VGS=+30V, VDS=0V
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A
Forward Transconductance
gFS
VDS=50V, ID=3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=640V, ID=6A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=400V, ID=6A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=6A, VGS=0V
Reverse Recovery Time
trr
IS=6A, VGS=0V,
dIF/dt=100A/µs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
800
V
V/°C
0.97
10
100
100
-100
3.0
1.6
5.4
5.0
2.0
µA
nA
nA
V
Ω
S
1010 1310 pF
90 115 pF
8
11
pF
21
6
9
26
65
47
44
30
60
140
105
90
6
22
1.4
615
5.4
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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6N80
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N80
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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