UNISONIC TECHNOLOGIES CO., LTD 7N90 Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 7N90 is universally applied in active power factor correction, electronic lamp ballast based on half bridge topology and high efficient switched mode power supply. FEATURES * High switching speed * RDS(ON) <1.8Ω @ VGS=10V, ID=3.5A * 100% avalanche tested * Improved dv/dt capability SYMBOL www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-475.H 7N90 Preliminary ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N90L-T3P-T 7N90G-T3P-T 7N90L-TF3-T 7N90G-TF3-T 7N90L-TF1-T 7N90G-TF1-T 7N90L-TF2-T 7N90G-TF2-T 7N90L-T2Q-T 7N90G-T2Q-T 7N90L-TQ2-T 7N90G-TQ2-T 7N90L-TQ2-R 7N90G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Power MOSFET Package TO-3P TO-220F TO-220F1 TO-220F2 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tape Reel MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-475.H 7N90 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V TC=25°C 7.0 A ID Continuous Drain Current TC=100°C 4.4 A Pulsed Drain Current (Note 2) IDM 28 A Avalanche Current (Note 2) IAR 6.4 A Single Pulsed Avalanche Energy (Note 3) EAS 500 mJ Repetitive Avalanche Energy (Note 2) EAR 21 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-3P 240 TO-220F/TO-220F1 52 Power Dissipation PD W TO-220F2 TO-262/TO-263 180 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=20mH, IAS=7.0A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤7.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER TO-3P TO-220F/TO-220F1 Junction to Ambient TO-220F2/TO-262 TO-263 TO-3P TO-220F/TO-220F1 Junction to Case TO-220F2 TO-262/TO-263 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA RATINGS 40 62.5 UNIT °C/W 0.52 θJC 2.4 °C/W 0.69 3 of 7 QW-R502-475.H 7N90 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 900 Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C VDS=900V, VGS=0V Drain-Source Leakage Current IDSS VDS=720V, TC=125°C Forward IGSS VDS=0V ,VGS=30V Gate-Source Leakage Current Reverse IGSS VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.5A Forward Transconductance gFS VDS=50V, ID=3.5A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V,VGS=0V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=30V, ID=1A, RG=25Ω (Note 4,5) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge QG VDS=120V, VGS=10V, Gate-Source Charge QGS ID=11A (Note 4,5) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =7.0A, VGS=0V Body Diode Reverse Recovery Time trr VGS=0V, IS=7.0A, dIF/dt=100A/μs (Note 4) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 0.96 10 100 100 -100 1.5 5.7 5.0 1.8 V V/°C µA µA nA nA V Ω S 1440 1880 140 185 17 23 pF pF pF 90 100 260 140 160 15 35 ns ns ns ns nC nC nC 6.4 25.6 1.4 400 4.3 A A V ns μC 4 of 7 QW-R502-475.H 7N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-475.H 7N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-475.H 7N90 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-475.H