DZ23-Series Datasheet

DZ23-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes, Dual
FEATURES
• Dual silicon planar Zener diodes, common
cathode
3
• The Zener voltages are graded according to the
international E24 standard. Standard Zener
voltage tolerance is ± 5 %.
1
2
• The parameters are valid for both diodes in one
case. VZ and Rzj of the two diodes in one case is  5 %
• AEC-Q101 qualified
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
VZ range nom.
2.7 to 51
V
Test current IZT
5
mA
VZ specification
Pulse current
Int. construction
Dual common cathode
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
DZ23C2V7-E3-08 to DZ23C51-E3-08
DZ23-series
DZ23C2V7-HE3-08 to DZ23C51-HE3-08
DZ23C2V7-E3-18 to DZ23C51-E3-18
DZ23C2V7-HE3-18 to DZ23C51-HE3-18
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
3000 (8 mm tape on 7" reel)
15 000
10 000 (8 mm tape on 13" reel)
10 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
8.8 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Power dissipation
Device on fiberglass substrate,
see layout on page 6
Ptot
300
mW
Thermal resistance,
junction to ambient air
Device on fiberglass substrate,
see layout on page 6
RthJA
420
K/W
Tj
150
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Operating temperature range
Top
- 55 to + 150
°C
IZ
Ptot/VZ
mA
Junction temperature
Zener current
Rev. 1.9, 01-Mar-13
Document Number: 85765
1
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DZ23-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
PART NUMBER
MARKING
CODE
VZ at IZT1
TEST
CURRENT
IZT1
V
IZT2
mA
REVERSE
VOLTAGE
DYNAMIC
RESISTANCE
f = 1 kHz
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VR at IR
ZZ at IZT1 ZZK at IZT2
VZ at IZT1

10-4/°C
V
nA
MIN.
NOM.
MAX.
MAX.
MAX.
MIN.
MAX.
DZ23C2V7
V1
2.5
2.7
2.9
5
1
MAX.
-
-
75 (< 83)
< 500
-9
-4
DZ23C3V0
V2
2.8
3.0
3.2
5
1
-
-
80 (< 95)
< 500
-9
-3
DZ23C3V3
V3
3.1
3.3
3.5
5
1
-
-
80 (< 95)
< 500
-8
-3
DZ23C3V6
V4
3.4
3.6
3.8
5
1
-
-
80 (< 95)
< 500
-8
-3
DZ23C3V9
V5
3.7
3.9
4.1
5
1
-
-
80 (< 95)
< 500
-7
-3
DZ23C4V3
V6
4
4.3
4.6
5
1
-
-
80 (< 95)
< 500
-6
-1
DZ23C4V7
V7
4.4
4.7
5
5
1
-
-
70 (< 78)
< 500
-5
2
DZ23C5V1
V8
4.8
5.1
5.4
5
1
> 0.8
100
30 (< 60)
< 480
-3
4
DZ23C5V6
V9
5.2
5.6
6
5
1
>1
100
10 (< 40)
< 400
-2
6
DZ23C6V2
V10
5.8
6.2
6.6
5
1
>2
100
4.8 (< 10)
< 200
-1
7
DZ23C6V8
V11
6.4
6.8
7.2
5
1
>3
100
4.5 (< 8)
< 150
2
7
DZ23C7V5
V12
7
7.5
7.9
5
1
>5
100
4 (< 7)
< 50
3
7
DZ23C8V2
V13
7.7
8.2
8.7
5
1
>6
100
4.5 (< 7)
< 50
4
7
DZ23C9V1
V14
8.5
9.1
9.6
5
1
>7
100
4.8 (< 10)
< 50
5
8
DZ23C10
V15
9.4
10
10.6
5
1
> 7.5
100
5.2 (< 15)
< 70
5
8
DZ23C11
V16
10.4
11
11.6
5
1
> 8.5
100
6 (< 20)
< 70
5
9
DZ23C12
V17
11.4
12
12.7
5
1
>9
100
7 (< 20)
< 90
6
9
DZ23C13
V18
12.4
13
14.1
5
1
> 10
100
9 (< 25)
< 110
7
9
DZ23C15
V19
13.8
15
15.6
5
1
> 11
100
11 (< 30)
< 110
7
9
DZ23C16
V20
15.3
16
17.1
5
1
> 12
100
13 (< 40)
< 170
8
9.5
DZ23C18
V21
16.8
18
19.1
5
1
> 14
100
18 (< 50)
< 170
8
9.5
DZ23C20
V22
18.8
20
21.2
5
1
> 15
100
20 (< 50)
< 220
8
10
DZ23C22
V23
20.8
22
23.3
5
1
> 17
100
25 (< 55)
< 220
8
10
DZ23C24
V24
22.8
24
25.6
5
1
> 18
100
28 (< 80)
< 220
8
10
DZ23C27
V25
25.1
27
28.9
5
1
> 20
100
30 (< 80)
< 250
8
10
DZ23C30
V26
28
30
32
5
1
> 22.5
100
35 (< 80)
< 250
8
10
DZ23C33
V27
31
33
35
5
1
> 25
100
40 (< 80)
< 250
8
10
DZ23C36
V28
34
36
38
5
1
> 27
100
40 (< 90)
< 250
8
10
DZ23C39
V29
37
39
41
5
1
> 29
100
50 (< 90)
< 300
10
12
DZ23C43
V30
40
43
46
5
1
> 32
100
60 (< 100)
< 700
10
12
DZ23C47
V31
44
47
50
5
1
> 35
100
70 (< 100)
< 750
10
12
DZ23C51
V32
48
51
54
5
1
> 38
100
70 (< 100)
< 750
10
12
Note
(1) Tested with pulses t = 5 ms
p

Rev. 1.9, 01-Mar-13
Document Number: 85765
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DZ23-Series
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
mA
103
Ω
100
TJ = 25 °C
102
IF
5
4
10
10-1
10
-2
10
-3
3
rzj
TJ = 100 °C
1
33
2
27
22
10
TJ = 25 °C
18
15
5
4
12
3
10
10-4
2
10-5
0
1
0.2
0.4
0.6
0.8
1V
VF
18114
6.8/8.2
6.2
0.1
2
1
5
2
5
18119
10
IZ
2
5
100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
Fig. 1 - Forward Characteristics
mW
500
Ω
103
Tj = 25 °C
7
5
4
400
Rzj
Ptot
47 + 51
43
39
36
3
2
300
102
200
7
5
4
3
100
2
0
0
100
Tamb
18115
10
0.1
200 °C
Fig. 2 - Admissible Power Dissipation vs.
Ambient Temperature
3
4 5
2
3 4 5
IZ
Ω
103
TJ = 25 °C
5
4
3
2
1
10
mA
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
rzj
2
18120
Rzth
Rzth = RthA x VZ x
5
4
3
2
Δ VZ
ΔTj
102
100
5
4
3
5
4
3
2
2
10
2.7
3.6
4.7
5.1
5
4
3
2
5.6
1
0.1
18117
2
5
1
2
5
10
2
5
100 mA
IZ
Fig. 3 - Dynamic Resistance vs. Zener Current
Rev. 1.9, 01-Mar-13
10
5
4
3
negative
2
positive
1
1
18121
2
3
4 5
10
2
3 4 5
100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Document Number: 85765
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DZ23-Series
www.vishay.com
Vishay Semiconductors
Ω
100
mV/°C
100
7
IZ = 5 mA
5
4
Rzj
Δ VZ
ΔTj
3
2
80
60
10
7
40
5
4
3
20
2
Tj = 25 °C
IZ = 5 mA
1
1
2
3
4 5
10
2
3 4 5
18122
0
100 V
0
VZ
Fig. 7 - Dynamic Resistance vs. Zener Voltage
60
40
80
100 V
VZ
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
mV/°C
25
Δ VZ
ΔTj
20
18125
V
9
8
20
5 mA
IZ = 1 mA
20 mA
15
7
Δ VZ
51
6
5
10
43
4
36
3
5
2
0
1
0
-5
1
2
3
4 5
10
2
3 4 5
100 V
VZ
18123
IZ = 2 mA
-1
0
20
40
60
18126
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
25
0.7
VZ at IZ = 5 mA
V
1.6
15
1.2
Δ VZ
0.5
8
0.4
7
0.3
0.2
6.2
5.9
0.1
5.6
0
1
0.8
0.6
0.4
0.2
0
5.1
-1
3.6
- 0.2
0
18124
20
40
60
80
4.7
100 120 140 C
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Rev. 1.9, 01-Mar-13
ΔVZ = Rzth x IZ
1.4
10
0.6
Δ VZ
140 °C
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
0.8
80 100 120
Tj
- 0.2
- 0.4
18127
1
2
3
4 5
10
2
3 4 5
100 V
VZ at IZ = 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener voltage
Document Number: 85765
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DZ23-Series
www.vishay.com
Vishay Semiconductors
mA
30
V
5
10
12
ΔVZ = Rzth x IZ
Tj = 25 °C
4
lZ
Δ VZ
3
15
20
18
IZ = 5 mA
22
2
27
Test
10 current
IZ 5 mA
1
33 36
IZ = 2 mA
0
0
20
40
60
0
100 V
80
0
VZ
18128
Tj = 25 °C
30
mA
10
2.7
40
Tj = 25 °C
6.8
lZ
40 V
VZ
3.9 5.6
3.3 4.7
8
8.2
lZ
30
6
20
4
Test
current
IZ 5 mA
10
20
Fig. 15 - Breakdown Characteristics
Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener voltage
mA
50
10
18112
Test
current
IZ 5 mA
39
51
43
47
2
0
0
0
1
2
3
4
5
6
7
8
9 10 V
0
VZ
18111
10 20 30 40 50 60 70 80 90 100 V
VZ
18113
Fig. 14 - Breakdown Characteristics
Fig. 16 - Breakdown Characteristics
LAYOUT FOR RthJA TEST
Thickness: fiberglass 0.059" (1.5 mm)
Copper leads 0.012" (0.3 mm)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
Rev. 1.9, 01-Mar-13
17451
Document Number: 85765
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DZ23-Series
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
1.15 (0.045)
0° t
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.5 (0.020)
0.45 (0.018)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Rev. 1.9, 01-Mar-13
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.43 (0.056)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document Number: 85765
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000