Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N7002LL
Preliminary
Power MOSFET
60V, 115mA N-CHANNEL
POWER MOSFET

DESCRIPTION
3
The UTC 2N7002LL uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
2
1
SOT-23-3
(JEDEC TO-236)

FEATURES
* RDS(ON) < 7.5Ω @ VGS=10V, ID=115mA
* Low Reverse Transfer Capacitance ( CRSS = typical 5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL
3. Drain
2.Gate
1.Source

ORDERING INFORMATION
Ordering Number
Note:

2N7002LLG-AE2-R
Pin Assignment: G: Gate D: Drain
Package
SOT-23-3
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2014Unisonic Technologies Co., Ltd
1 of 3
QW-R502-284.e
2N7002LL

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (RG=1.0MΩ)
Continuous
Gate-Source Voltage
Non-repetitive (tP≦50μs)
RATINGS
UNIT
60
V
60
V
±20
V
±40
V
Continuous(TC=25°C)
115
Drain Current
mA
ID
Pulse(Note 2)
460
225
mW
Power Dissipation (TA = 25°C)
PD
Derate above 25°C
1.8
mW /°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦300μs, Duty cycle≦2%

THERMAL DATA
PARAMETER
SYMBOL
θJA
Junction to Ambient

SYMBOL
VDSS
VDGR
VGSS
VGSM
RATINGS
556
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS(Note)
Gate Threshold Voltage
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=10µA
VDS=60V, VGS=0V (TJ=25°C)
VGS=±20V, VDS=0V
60
VGS(TH)
VDS=VGS, ID=250 µA
VGS=10V, ID=115mA
VGS=5V, ID=50mA
VGS=10V, ID=115mA(TC=25°C)
VGS=5V, ID=50mA(TC=25°C)
1.0
Drain-Source On-State Voltage
VDS(ON)
Static Drain-Source On-Resistance
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=25V, ID=115mA,
VGEN=10V, RG=25Ω, RL=50Ω
Turn-OFF Delay Time
tD(OFF)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=115mA, VGS=0V
Maximum Body-Diode Continuous Current
IS
Source Current Pulsed
ISM
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
1.0
±100
2.5
3.75
0.375
7.5
7.5
V
µA
nA
V
V
Ω
50
25
5.0
pF
pF
pF
20
40
ns
ns
1.5
115
115
V
mA
mA
2 of 3
QW-R502-284.e
2N7002LL
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-284.e
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