Datasheet

UNISONIC TECHNOLOGIES CO., LTD
1N65A
Power MOSFET
0.5A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 1N65A is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications at power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) <15.5Ω@ VGS = 10V, ID = 0.5A
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (CRSS = 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N65AG-AA3-R
1N65AL-TM3-T
1N65AG-TM3-T
1N65AL-TN3-R
1N65AG-TN3-R
1N65AL-T92-B
1N65AG-T92-B
1N65AL-T92-K
1N65AG-T92-K
Note: Pin Assignment: G: Gate D: Drain S: Source
1N65AG-AA3-R
Package
SOT-223
TO-251
TO-252
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tape Reel
Tape Box
Bulk
(1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Green Package
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
(2) AA3: SOT-223, TM3: TO-251, TN3: TO-252
T92: TO-92
(3) G: Halogen Free and Lead Free, L: Lead Free
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1N65A

Power MOSFET
MARKING
PACKAGE
MARKING
SOT-223
TO-251 / TO-252
UTC
TO-92
1N65A
1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
L: Lead Free
G: Halogen Free
Data Code
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QW-R502-584.D
1N65A

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
0.5
A
Pulsed Drain Current (Note 2)
IDM
2
A
Avalanche Energy
Single Pulse(Note 3)
EAS
50
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
SOT-223
8.9
W
Power Dissipation (TC=25°C) TO-251/TO-252
27.6
W
TO-92
1.42
W
PD
SOT-223
0.07
mW/°C
TO-251/TO-252
Derate above 25°C
0.22
mW/°C
TO-92
0.011
mW/°C
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C
4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
SOT-223
TO-251/TO-252
Junction to Ambient
TO-92
SOT-223
Junction to Case
TO-251/TO-252
TO-92
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
150
110
180
14
4.53
88
UNIT
°C/W
°C/W
°C/W
°С/W
°С/W
°С/W
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
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
650
V
VDS = 650V, VGS = 0V
10
μA
Forward
VGS = 20V, VDS = 0V
100 nA
Gate-Source Leakage Current
IGSS
-100 nA
Reverse
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250mA,referenced to 25°C
0.4
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 0.5A
11.5 15.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
100 pF
VDS=25V, VGS=0V,
Output Capacitance
COSS
20
pF
f=1MHz
3
pF
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
8
10
nC
VDS=520V, VGS=10V,
Gate-Source Charge
QGS
1.8
nC
ID=0.8A (Note 1,2)
4.0
nC
Gate-Drain Charge
QGD
Turn-On Delay Time
tD (ON)
12
34
ns
Turn-On Rise Time
tR
11
32
ns
VDD=325V, ID=0.5A,
RG=5Ω (Note 1,2)
Turn-Off Delay Time
tD (OFF)
40
90
ns
Turn-Off Fall Time
tF
18
46
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
1.2
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
4.8
A
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS=0V, ISD = 1.2A
1.6
V
Reverse Recovery Time
trr
136
ns
VGS=0V, ISD = 1.2A
di/dt = 100A/μs
0.3
μC
Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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1N65A
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
tD(ON)
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
0.2μF
tF
Switching Waveforms
Same Type
as D.U.T.
50kΩ
tD(OFF)
tR
QG
10V
0.3μF
QGS
VDS
QGD
VGS
DUT
1mA
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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
Power MOSFET
TYPICAL CHARACTERISTICS
Transfer Characteristics
Output Characteristics
4.5V
10-1
250μs Pulse Test
TC=25°C
4
6
8
Gate-Source Voltage, VGS (V)
On-Resistance vs. Drain Current
Source- Drain Diode Forward Voltage
TJ=25°C
10
VGS=0V
250μs Pulse Test
VGS=10V
20
VGS=20V
15
10
5
100
10-1
0
0.0
0.5
1.5
1.0
Drain Current, ID (A)
2.0
0.2
2.5
Capacitance vs. Drain-Source Voltage
200
CISS
150
Capacitance (pF)
2
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON) (Ω)
Drain-Source Voltage, VDS (V)
25
CISS=CGS+CGD
(CDS=shorted)
COSS=CDS+CGD
CRSS=CGD
COSS
100
50
0
100
10-1
101
100
30
Drain Current, ID (A)
VDS=50V
250μs Pulse Test
CRSS
VGS=0V
f = 1MHz
-1
10
0
1
10
10
Drain-SourceVoltage, VDS (V)
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0.4
0.6
0.8
1.0
1.2
1.4
Source-Drain Voltage, VSD (V)
1.6
Gate Charge vs. Gate-Source Voltage
12
Gate-Source Voltage, VGS (V)
Drain Current, ID (A)
100
VGS
Top: 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5V
Bottorm:4.5V
VDS=520V
10
VDS=300V
VDS=120V
8
6
4
2
0
ID=1.0A
0
2
6
4
8
Total Gate Charge, QG (nC)
10
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
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
On-Resistance vs. Temperature
3.0
VGS=0V
ID=250μA
Drain-Source On-Resistance, RDS(ON)
(Normalized)
Drain-Source Breakdown Voltage, BVDSS,
(Normalized)
Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
VGS=10V
ID=0.5A
2.5
2.0
1.5
1.0
0.5
0.0
0.8
-100
0
100 150
-50
50
Junction Temperature, TJ (°C)
-100
200
Max. Safe Operating Area
Max. Drain Current vs. Case Temperature
Operation in This
Area is Limited by
RDS(on)
100μs
1ms
100
10ms
10-1
10-2
Tc=25°C
TJ=150°C
Single Pulse
100
200
1.0
Drain Current, ID (A)
Drain Current, ID (A)
10
1
-50
50
100 150
0
Junction Temperature, TJ (°C)
101
102
Drain-Source Voltage, VDS (V)
103
0.5
0.0
25
50
125
100
75
Case Temperature, TC (°C)
150
Thermal Response, θJC (t)
Thermal Response
0.5
10
0
θJC (t) = 3.45°C/W Max.
Duty Factor, D=t1/t2
TJM-TC=PDM×θJC (t)
0.2
0.1
10
0.0
5
2
0.0
-1
1
0.0
10-5
Single pulse
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
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1N65A
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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