UNISONIC TECHNOLOGIES CO., LTD 2N65L Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-580.E 2N65L Power MOSFET ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N65LL-TA3-T 2N65LG-TA3-T TO-220 2N65LL-TF1-T 2N65LG-TF1-T TO-220F1 2N65LL-TF3-T 2N65LG-TF3-T TO-220F 2N65LL-TM3-T 2N65LG-TM3-T TO-251 2N65LL-TMA-T 2N65LG-TMA-T TO-251L 2N65LL-TN3-R 2N65LG-TN3-R TO-252 2N65LL-TND-R 2N65LG-TND-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source 2N65LL-TA3-T Packing Tube Tube Tube Tube Tube Tape Reel Tape Reel (1) T: Tube, R: Tape Reel (1)Packing Type (2)Package Type (3)Green Package Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S (2) TA3: TO-220, TF1: TO-220F1, TF3: TO-220F TM3: TO-251, TMA:TO-251L, TN3: TO-252, TND: TO-252D, T2Q: TO-262 (3) L: Lead Free, G: Halogen Free and Lead Free MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-580.E 2N65L Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Continuous ID 2.0 A Drain Current 8.0 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 140 mJ Avalanche Energy 4.5 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 54 W TO-220F/TO-220F1 23 W PD Power Dissipation TO-251/TO-251L/TO-252 44 W TO-252D Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA Junction to Ambient Junction to Case PARAMETER TO-220/TO-220F/TO-220F1 TO-251/TO-251L/TO-252 TO-252D TO-220 TO-220F/TO-220F1 TO-251/TO-251L/TO-252 TO-252D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJc RATINGS 62.5 UNIT °С/W 100 °С/W 2.32 5.5 °С/W °С/W 2.87 °С/W 3 of 7 QW-R502-580.E 2N65L Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS IDSS VGS = 0V, ID = 250μA VDS = 650V, VGS = 0V Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS f =1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) VDD =325V, ID =2.4A, Turn-On Rise Time tR RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Reverse Recovery Time trr Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VDS=520V, VGS=10V, ID=2.4A (Note 1, 2) MIN TYP MAX UNIT 650 0.4 V 10 μA 100 nA -100 nA V/°С 3.9 4.0 5.0 V Ω 270 40 5 350 50 7 pF pF pF 10 25 20 25 9.0 1.6 4.3 30 60 50 60 11 ns ns ns ns nC nC nC 1.4 2.0 8.0 V A A ns μC 2.0 VGS = 0 V, ISD = 2.0 A VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs (Note1) 180 0.72 4 of 7 QW-R502-580.E 2N65L Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-580.E 2N65L Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-580.E 2N65L Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) 1.4 3.5 1.2 3.0 1.0 Continuous Drain-Source Current, ISD (A) Drain Current, ID (A) Drain-Source On-State Resistance Characteristics VGS=10V, ID=1.0A 0.8 0.6 0.4 0.2 Continuous Drain-Source Current vs. Source to Drain Voltage 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 Drain to Source Voltage, VDS (V) 5 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-580.E