Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT4815-H
Power MOSFET
8 Amps, -30 Volts
P-CHANNEL POWER MOSFET

DESCRIPTION
The UTC UTT4815-H is a P-channel enhancement mode power
MOSFET using UTC’s advanced trench technology to provide
customers with a minimum on-state resistance and extremely gate
charge with a 25V gate rating
The UTC UTT4815-H is ESD protected and universally applied in
PWM or used as a load switch.

FEATURES
* VDS(V)= -30V
* ID= -8A
* RDS(ON) < 20mΩ @ VGS =-10V, ID =-8A
RDS(ON) < 32mΩ @ VGS =-4.5V, ID =-5A

SYMBOL
Drain (5, 6, 7, 8)
Gate (4)
Source (1, 2, 3)

ORDERING INFORMATION
Ordering Number
Note:

UTT4815G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
1
S
2
S
Pin Assignment
3 4 5 6 7
S G D D D
8
D
Packing
Tape Reel
MARKING
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UTT4815-H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
RATINGS
UNIT
-30
V
±25
TA = 25°C
-8
Continuous
ID
(Note 2)
Drain Current
TA = 70°C
-5.1
A
Pulsed (Note 3)
IDM
-32
Power Dissipation (Note 2)
TA = 25°C
PD
2.1
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+ 150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
The current rating is based on the t ≤ 10s thermal resistance rating.
3. Repetitive rating, pulse width limited by junction temperature.
Drain-Source Voltage
Gate-Source Voltage

THERMAL CHARACTERISTICS (Note)
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
110
°C/W
Note: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
The current rating is based on the t ≤ 10s thermal resistance rating.

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
IGSS
TEST CONDITIONS
VGS =0 V, ID =-250µA
VDS =-24V, VGS =0 V
VGS=+25V, VDS=0V
VGS=-25V, VDS=0V
VGS(TH) VDS =VGS, ID =-250 µA
VGS =-10V, ID =-8A
RDS(ON)
VGS =-4.5V, ID =-5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VDS =-15 V, VGS =0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS =-15V, VGS =-4.5V,
Gate Source Charge
QGS
ID=-5A (Note 1,2)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDS =-15V, VGS =-10V, ID=-1A
Turn-OFF Delay Time
tD(OFF) RGEN=6Ω (Note 1,2)
Turn-OFF Fall-Time
tF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=-1A, VGS=0V
Maximum Continuous Drain-Source Diode
IS
Forward Current
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
MIN
TYP
MAX
UNIT
-1
+100
-100
V
µA
nA
nA
-2.5
20
32
V
mΩ
mΩ
1250 1820
160 235
90
130
pF
-30
-1
-1.6
16.5
25.6
11
3.4
4.2
5.8
18.8
46.9
12.3
17
6
8
11
36
89
23
nC
ns
-1
V
-8
A
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UTT4815-H
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
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UTT4815-H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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