Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UFB3207H
Power MOSFET
180A, 75V N-CHANNEL
POWER MOSFET

1
DESCRIPTION
TO-220
The UTC UFB3207H is a power mosfet, it uses UTC’s
advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UFB3207H is suitable for hard switched and high
frequency circuits, etc.

1
FEATURES
TO-247
* RDS(ON) < 4.5mΩ @ VGS=10V, ID=75A
* High switching speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UFB3207HL-TA3-T
UFB3207HG-TA3-T
UFB3207HL-T47-T
UFB3207HG-T47-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
UFB3207HL-TA3-T

Package
TO-220
TO-247
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TA3: TO-220, T47: TO-247
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
75
V
±20
V
TC=25°C
180 (Note 2)
Continuous
A
ID
Drain Current [email protected]
TC=100°C
130 (Note 2)
720
A
Pulsed (Note 3)
IDM
Single Pulse Avalanche Energy (Note 4)
EAS
910
mJ
TO-220
330
W
Power Dissipation
TC=25°C
PD
TO-247
450
W
Peak Diode Recovery (Note 5)
dv/dt
5.8
V/ns
Junction Temperature
TJ
-55~+175
°C
Storage Temperature
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
3. Repetitive rating; pulse width limited by max. junction temperature.
4. Limited by TJmax, starting TJ=25°C, L=0.33mH, RG=25Ω, IAS=75A, VGS=10V. Part not recommended for use
above this value.
5. ISD≤75A, di/dt≤500A/µs, VDD≤V(BR)DSS, TJ≤ 175°C.

SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
SYMBOL
TO-220
Junction to Ambient
θJA
TO-247
TO-220
Junction-to-Case
θJC
TO-247
Notes: 1. When mounted on 1" square PCB (FR-4 or G-10 Material).
2. Rθ is measured at TJ approximately 90°C.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
62
50
0.45
0.3
UNIT
°C/W
°C/W
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain-Source Leakage Current
Gate-Source Leakage
Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
V(BR)DSS
VGS=0V, ID=250µA
Reference to 25°C, ID=1mA
∆V(BR)DSS/∆TJ
(Note 2)
VDS=75V,VGS=0V
IDSS
VDS=75V, VGS=0V, TJ=125°C
VGS=+20V
IGSS
VGS=-20V
RG
f=1.0MHz, open drain
Gate Resistance
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=75A (Note 1)
Forward Transconductance
gFS
VDS=50V, ID =75A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=50V, VGS=0 V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=60V, ID=75A,
Gate Source Charge
QGS
(Note 1)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=48V, RG=2.6Ω, ID=75A,
Turn-ON Rise Time
tR
VGS=10V (Note 1)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
Current
Drain-Source Diode Forward Voltage
ISM
(Note 2)
Drain-Source Diode Forward Voltage
VSD
IS=75A, VGS=0V, TJ=25°C
(Note 1)
MIN
TYP
MAX
75
UNIT
V
0.069
V/°C
20
250
200
-200
µA
µA
nA
nA
Ω
4.0
4.5
V
mΩ
S
1.2
2.0
3.6
150
7600
710
390
180
48
68
29
120
68
74
pF
pF
pF
260
180
(Note 2)
nC
nC
nC
ns
ns
ns
ns
A
720
A
1.3
V
Notes: 1. Pulse width ≤ 400µs; duty cycle ≤ 2%.
2. Repetitive rating; pulse width limited by max. junction temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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UFB3207H

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UFB3207H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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