Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UT3008-H
Power MOSFET
-30V P-CHANNEL
ENHANCEMENT MODE
MOSFET

DESCRIPTION
The UTC UT3008-H is a P-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance.
The UTC UT3008-H is suitable for backlighting, power
management functions and DC-DC converters.

FEATURES
* RDS(ON) < 17mΩ @ VGS= -10V, ID= -10A
RDS(ON) < 25mΩ @ VGS= -4.5V, ID= -10A
* Low RDS(ON)

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT3008G-K08-3030-R
Pin Assignment: G: Gate
D: Drain
Package
DFN-8(3×3)
S: Source
1
S
2
S
Pin Assignment
3 4 5 6 7
S G D D D
8
D
Packing
Tape Reel
MARKING
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UT3008-H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 2) (TA=25°C)
ID
-11.7
A
VGS=-10V
Pulsed Drain Current (10μs Pulse, Duty Cycle=1%)
IDM
-80
A
Maximum Continuous Body Diode Forward Current
IS
-3.0
A
(Note 2)
(Note 1)
0.9
W
Total Power Dissipation
PD
(Note 2)
2.2
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
Steady State
140
°C/W
Junction to Ambient (Note 1)
θJA
t<10s
72
°C/W
Steady State
57
°C/W
Junction to Ambient (Note 2)
θJA
t<10s
30
°C/W
Junction-to-Case (Note 2)
θJC
7.1
°C/W
Notes: 1. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
2. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNISONIC TECHNOLOGIES CO., LTD
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
STATIC PARAMETERS (Note 1)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
SYMBOL
Static Drain-Source On-State Resistance
RDS(ON)
BVDSS
IDSS
IGSS
VGS(TH)
TEST CONDITIONS
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
-30
VDS=VGS, ID=-250µA
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-10A
-1.1
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
CISS
VGS=0V, VDS=-25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VDS=0V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-10V, VDS=-15V, ID=-0.5A
Gate to Source Charge
QGS
IG=-100µA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VGS=-10V, VDS=-15V, RG=6Ω
Rise Time
tR
ID=-0.5A
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=-1A,VGS=0V
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Guaranteed by design. Not subject to product testing.
UNISONIC TECHNOLOGIES CO., LTD
MIN TYP MAX UNIT
-1.0
+100
-100
V
µA
nA
nA
-1.6 -2.1
12.5 17
18.5 25
V
mΩ
mΩ
880
145
140
6.4
pF
pF
pF
Ω
76.4
4.8
3.6
50
49
460
230
nC
nC
nC
ns
ns
ns
ns
-0.7
-1.0
V
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UT3008-H
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
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UT3008-H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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