Datasheet

UNISONIC TECHNOLOGIES CO., LTD
20NP03
Preliminary
Power MOSFET
N AND P-CHANNEL
ENHANCEMENT MODE FIELD
DFFECT TRANSISTOR

DESCRIPTION
1
The UTC 20NP03 is an N and P-channel enhancement mode
field dffect transistor, it uses UTC’s advanced technology to provide
the customers with a minimum on-state resistance, high switching
speed and low gate charge.

TO-252-4
FEATURES
* N-channel:
25A, 30V, RDS(on) < 28 mΩ @ VGS=4.5V, ID=6A
25A, 30V, RDS(on) < 18 mΩ @ VGS=10V, ID=7A
* P-channel:
-19A, -30V, RDS(on) < 57 mΩ @ VGS=-4.5V, ID=-5A
-19A, -30V, RDS(on) < 36 mΩ @ VGS=-10V, ID=-6A
* High switching speed
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
20NP03L-TN4-R
20NP03G-TN4-R
TO-252-4
Note: Pin Assignment: G: Gate
D: Drain
S: Source
1
S1
Pin Assignment
2
3
4
G1
D
S2
5
G2
Packing
Tape Reel
20NP03L-TN4-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) TN4: TO-252-4
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R211-023.a
20NP03

Preliminary
Power MOSFET
MARKING
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20NP03

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
RATINGS
UNIT
N-channel
P-channe
Drain-Source Voltage
VDSS
30
-30
V
Gate-Source Voltage
VGSS
±20
±20
V
TC=25°C
25
-19
A
TC=70
20
-15
A
ID
Continuous
Drain Current
TA=25°C
9
-7
A
TA=70
7
-5.7
A
Pulsed (Note 2)
IDM
65
-45
A
Avalanche Current
IAS
19
-18
A
Avalanche Energy
L=0.1mH
EAS
18
17
mJ
TC=25°C
21
W
TC=70
13
W
Power Dissipation
PD
TA=25°C
3
W
TA=70
2
W
Junction Temperature
TJ
-55~150
°C
Storage Temperature
TSTG
-55~150
°C
Lead Temperature (1/16” from case for 10 sec.)
TL
275
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER

SYMBOL
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Junction to Case
θJC
Junction to Ambient
θJA
Note: Pulse width limited by maximum junction temperature.
UNISONIC TECHNOLOGIES CO., LTD
RATINGS
6
42
UNIT
°C/W
°C/W
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20NP03

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
N-channel
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS
ID=250uA, VGS=0V
VDS=24V, VGS=0V
VDS=20V, VGS=0V, TJ=55°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
30
VDS=VGS, ID=250uA
VGS=4.5V, ID=6A
VGS=10V, ID=7A
VDS=10V, ID=7A
VGS=10V, VDS=5V
1
IDSS
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 1)
Forward Transconductance (Note 1)
On-State Drain Current (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
Gate to Source Charge Note 2)
Gate to Drain Charge Note 2)
Turn-ON Delay Time (Note 2)
Rise Time (Note 2)
Turn-OFF Delay Time (Note 2)
Fall-Time (Note 2)
SOURCE TO DRAIN DIODE SPECIFICATIONS
Continuous Current
Drain-Source Diode Forward Voltage (Note 1)
IGSS
VGS(TH)
RDS(ON)
gFS
ID(ON)
CISS
COSS
CRSS
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
IS
VSD
UNISONIC TECHNOLOGIES CO., LTD
VGS=0V, VDS=25V,
f=1.0MHz
VGS=0V, VDS=0V, f=1.0MHz
VGS=10V, VDS=30V(BR)DSS,
ID=1A, IG=100uA
VDS=30V, VGS=10V, ID=0.5A,
RG=25Ω
IS=IF, VGS=0V
MIN TYP MAX UNIT
1
10
+100
-100
1.7
2.5
28
18
29
65
V
µA
µA
nA
nA
V
mΩ
mΩ
S
A
670
160
155
2
pF
pF
pF
Ω
106
5
10.5
40
75
365
205
nC
nC
nC
ns
ns
ns
ns
9
1
A
V
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20NP03

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
P-channel
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 1)
IGSS
VGS(TH)
RDS(ON)
Forward Transconductance
gFS
On-State Drain Current (Note 1)
ID(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
Gate to Source Charge Note 2)
QGS
Gate to Drain Charge Note 2)
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
Rise Time (Note 2)
tR
Turn-OFF Delay Time (Note 2)
tD(OFF)
Fall-Time (Note 2)
tF
SOURCE TO DRAIN DIODE SPECIFICATIONS
Continuous Current
IS
Drain-Source Diode Forward Voltage (Note 1)
VSD
Notes: 1. Pulse test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
2. Independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
TEST CONDITIONS
MIN TYP MAX UNIT
ID=-250uA, VGS=0V
-30
VDS=-24V, VGS=0V
VDS=-20V, VGS=0V, TJ=55°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
VDS=VGS, ID=-250uA
VGS=-4.5V, ID=-5A
VGS=-10V, ID=-6A
VDS=-10V, ID=-6A
VGS=-5V, VDS=-10V
VGS=0V, VDS=-25V,
f=1.0MHz
VGS=0V, VDS=0V, f=1.0MHz
VGS=-10V, VDS=-30V(BR)DSS,
ID=-1A, IG=100uA
VDS=-30V, VGS=-10V,
ID=-0.5A, RG=25Ω
IS=IF, VGS=0V
-1
-1
-10
+100
-100
V
µA
µA
nA
nA
-1.6 -2.5
57
35
36
15
V
mΩ
mΩ
S
A
605
110
75
6.27
pF
pF
pF
Ω
60
2.5
6
60
84
560
305
nC
nC
nC
ns
ns
ns
ns
-45
-7
-1
A
V
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QW-R211-023.a
20NP03
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
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QW-R211-023.a
20NP03
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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