Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT60N08H
Power MOSFET
60 Amps, 80 Volts
N-CHANNEL POWER MOSFET

DESCRIPTION
The UTC UTT60N08H is an N-channel power MOSFET adopting
UTC’s advanced planar stripe and DMOS technology to provide
designers with perfectly high switching speed and minimum on-state
resistance. It also can withstand high energy pulse in the avalanche
and commutation modes.
The UTC UTT60N08H is applied in low voltage applications such
as DC motor control, automotive, and high efficiency switching for
DC/DC converters.

FEATURES
* RDS(ON) < 20mΩ @ VGS=10V, ID=30A
* High switching speed
* 100% avalanche tested

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT60N08HL-TA3-T
UTT60N08HG-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source

Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
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UTT60N08H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
80
V
Gate to Source Voltage
VGSS
±25
V
Continuous
ID
60
A
Continuous Drain Current
Pulsed
IDM
176
A
Avalanche Energy
Single Pulsed (Note 1)
EAS
80
mJ
Peak Diode Recovery dv/dt (Note 2)
dv/dt
6.5
V/ns
Power Dissipation
PD
100
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient
θJA
Junction to Case
θJC
Notes : 1. L=0.4mH, IAS=44A, VDD=25V, RG=25Ω, Starting TJ=25°C.
2. ISD ≤60A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ=25°C.
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
62.5
1.25
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
BVDSS
VGS=0V, ID=250µA
∆BVDSS/∆TJ ID=250μA,Referenced to 25°C
VDS=80V, VGS=0V
IDSS
VDS=64V, TC=150°C
VDS=0V ,VGS=+25V
IGSS
VDS=0V ,VGS=-25V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=30A
Forward Transconductance
gFS
VDS=30V, ID=30A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V,VGS=0V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A
Gate-Source Charge
QGS
RG=100kΩ (Note 4,5)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω
(Note 4,5)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =60A, VGS=0V
Body Diode Reverse Recovery Time
tRR
VGS=0V, IS=60A,
dIF/dt=100A/μs (Note 4)
Body Diode Reverse Recovery Charge
QRR
Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.4mH, IAS=20A, VDD=25V, RG=25Ω, Starting TJ=25°C
3. ISD ≤60A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
5. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
80
0.07
1
10
+100
-100
2.0
4.0
20
V
V/°C
µA
µA
nA
nA
31
V
mΩ
S
1400
150
40
pF
pF
pF
120
10
12
90
50
120
35
nC
nC
nC
ns
ns
ns
ns
60
176
1.5
73
185
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A
A
V
ns
μC
UTT60N08H

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
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Time
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UTT60N08H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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VER.a
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