UNISONIC TECHNOLOGIES CO., LTD UTT70N06 Preliminary Power MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) < 10 mΩ @ VGS = 10 V, ID = 35 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT70N06L-TN3-R UTT70N06G-TN3-R UTT70N06L-TND-R UTT70N06G-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-053.a UTT70N06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V TC = 25°C 70 A Continuous Drain Current ID TC = 100°C 56 A Drain Current Pulsed (Note 2) IDM 280 A Avalanche Energy Single Pulsed (Note 3) EAS 80 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 10 V/ns Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature 3. L=0.1mH, IAS=40A, VDD=25V, RG=20Ω, Starting TJ=25°C 4. ISD≤48A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62 2.5 UNIT °C/W °C/W 2 of 6 QW-R209-053.a UTT70N06 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 60 Drain-Source Leakage Current IDSS VDS=60V, VGS=0V Forward VGS=20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V Breakdown Voltage Temperature △BVDSS/△TJ ID = 1mA, Referenced to 25°C Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=35A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=30V, VGS=10V,ID=0.5A Turn-On Rise Time tR (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=50V, VGS=10V, ID=48A, IG=100μA Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge (Miller Charge) QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=70A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS=0V, IS=70A dIF/dt=100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 1 100 -100 0.08 V μA nA nA V/°C 4.0 10 V mΩ 3500 310 55 pF pF pF 125 160 720 200 275 18 41 ns ns ns ns nC nC nC 1.4 V 70 A 280 90 300 ns μC 3 of 6 QW-R209-053.a UTT70N06 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-053.a UTT70N06 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤1μs tD(OFF) tF tR Duty Factor≤0.1% Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS 12V Same Type as D.U.T. 50kΩ 0.2μF QG 10V 0.3μF VDS QGS QGD VGS DUT 1mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS R VDD G 10V D.U.T. tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig. 4B Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-053.a UTT70N06 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-053.a