UNISONIC TECHNOLOGIES CO., LTD 18NM65-SH Power MOSFET 18A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 18NM65-SH is a high voltage super junction MOSFET and is designed to have better characteristics. The UTC 18NM65-SH Utilizing an advanced charge-balance technology, enhance system efficiency, improve EMI and reliability. such as low gate charge, low on-state resistance and have a high power density and high rugged avalanche characteristics. This super junction MOSFET usually used at AC/DC power conversion, and industrial power applications. FEATURES * RDS(ON) < 0.35Ω @ VGS=10V, ID=9A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 18NM65L-TA3-T 18NM65G-TA3-T 18NM65L-TF1-T 18NM65G-TF1-T 18NM65L-TF2-T 18NM65G-TF2-T 18NM65L-TF3-T 18NM65G-TF3-T 18NM65L-TM3-R 18NM65G-TM3-R 18NM65L-TN3-R 18NM65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel 1 of 5 QW-R205-070.D 18NM65-SH Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R205-070.D 18NM65-SH ABSOLUTE MAXIMUM RATINGS Power MOSFET (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 18 A Pulsed Drain Current IDM 45 A Avalanche Current IAR 18 A Avalanche Energy Single Pulsed EAS 500 (Note 3) mJ Peak Diode Recovery dv/dt dv/dt 6 V/ns TO-220 235 W TO-220F/ TO-220F1 Power Dissipation PD 390 W TO-220F2 TO-251/TO-252 357 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=150mH, IAS=3.6A, VDD=50V, RG=25Ω, Starting TJ=25°С 4. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Drain current limited by maximum junction temperature THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251/TO-252 TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS UNIT 62.5 °С/W 110 0.53 °С/W °С/W 5 °С/W 1.79 °С/W 3 of 5 QW-R205-070.D 18NM65-SH Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Drain-Source Leakage Current IDSS VDS=650V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=9A (Note) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=50VDSS, Gate Source Charge QGS ID=1.3A, IG=100µA Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=30VDSS, ID=0.5A, RG=25Ω (External) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IF=IS ,VGS=0V Reverse Recovery Time trr VGS=0V, dIF/dt=100A/µs, IS=18A, VR=100V Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating ambient temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 2.5 25 ±100 V µA nA 4.5 0.35 V Ω 1100 750 65 pF pF pF 190 11 36 86 190 250 185 nC nC nC ns ns ns ns 420 7 18 A 54 A 1.5 V ns µC 4 of 5 QW-R205-070.D 18NM65-SH Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 1.25 VGS=10V, ID=1A 250 Drain Current, ID (A) Drain Current, ID (µA) 300 200 150 100 1.0 0 .75 0.5 0.25 50 0 Drain-Source On-State Resistance Characteristics 0 200 600 400 800 1000 Drain-Source Breakdown Voltage, BVDSS (V) 0 0 0.5 1 1.5 2 2.5 Drain to Source Voltage, VDS (V) Continuous Drain-Source Diode Forward Current, IS (A) Continuous Drain-Source Diode Forward Current vs. Source to Drain Voltage 24 20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R205-070.D