UNISONIC TECHNOLOGIES CO., LTD
UNA06R032H
Preliminary
POWER MOSFET
193A, 60V N-CHANNEL
POWERTRENCH MOSFET
DESCRIPTION
The UTC UNA06R032H is an N-channel Power Trench
MOSFET, it uses UTC’s advanced technology to provide the
customers with fast switching speed and a minimum on-state
resistance, etc.
The UTC UNA06R032H is suitable for battery protection circuit,
motor drives and uninterruptible power supplies, etc.
FEATURES
* RDS(ON) < 24.0mΩ @ VGS=10V, ID=75A
* Low gate charge
* Fast switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UNA06R032HL-TA3-T
UNA06R032HG-TA3-T
UNA06R032HL-TC3-T
UNA06R032HG-TC3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-230
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
MARKING
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Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING (TC=25°C unless otherwise noted.)
PARAMETER
RATINGS
UNIT
60
V
±20
V
TC=25°C (Silicon Limited)
193
A
Continuous TC=100°C (Silicon Limited)
ID
136
A
Drain Current
TC=25°C (Package Limited)
120
A
772
A
Pulsed (Note 1)
IDM
Single Pulse Avalanche Energy (Note 2)
EAS
1434
mJ
Peak Diode Recovery (Note 3)
dv/dt
6.0
V/ns
TC=25°C
231
W
Power Dissipation
PD
Derate above 25°C
1.54
W/°C
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
VDSS
VGSS
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
Junction to Case
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SYMBOL
θJA
θJC
RATINGS
62.5
0.65
UNIT
°C/W
°C/W
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POWER MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
SYMBOL
BVDSS
VGS=0V, ID=250µA, TC=25°C
MIN
IDSS
Forward
Reverse
IGSS
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MAX
UNIT
V
0.05
VDS=48V, VGS=0V
VDS=48V, TC=150°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON) VGS=10V, ID=75A
Forward Transconductance
gFS
VDS=10V, ID=75A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge at 10V
QG
ID=1.3A, VDS=50V, VGS=10V,
Gate-to-Source Charge
QGS
(Note 4)
Gate-to-Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω
Rise Time
tR
VGS=10V, (Note 4)
Turn-OFF Delay Time
tD(OFF)
Fall Time
tF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain to Source
IS
Diode Forward Current
Maximum Pulsed Drain to Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
ISD=75A, VGS=0V
Reverse Recovery Time
tRR
ISD=75A, VGS=0V,
dIF/dt=100A/µs
Reverse Recovery Charge
QRR
Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L=0.51mH, IAS=75A, VDD=50V, RG=25Ω, starting TJ=25°C.
3. ISD≤75A, di/dt≤450A/μs, VDD≤BVDSS, starting TJ=25°C.
4. Essentially independent of operating temperature typical characteristics.
UNISONIC TECHNOLOGIES CO., LTD
TYP
60
∆BVDSS/∆TJ Reference to 25°C, ID=1mA
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
TEST CONDITIONS
2.5
V/°C
1
500
+100
-100
µA
µA
nA
nA
4.5
4.0
154
V
mΩ
S
1571
693
308
pF
pF
pF
612
60
78
440
455
1370
677
nC
nC
nC
ns
ns
ns
ns
3.5
46
50
193
A
772
A
1.3
V
ns
nC
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POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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POWER MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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