UNISONIC TECHNOLOGIES CO., LTD
UFB4110H
POWER MOSFET
180A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UFB4110H is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with a
minimum on-state resistance, etc.
The UTC UFB4110H is suitable for hard switched and high
frequency circuits, etc.
FEATURES
* RDS(ON) < 5.5mΩ @ VGS=10V, ID=75A
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UFB4110HL-TA3-T
UFB4110HG-TA3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
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POWER MOSFET
ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)
PARAMETER
RATINGS
UNIT
100
V
±20
V
Continuous TC=25°C (Silicon Limited)
180 (Note 2)
A
Drain Current
670
A
Pulsed (Note 2)
Single Pulse Avalanche Energy (Note 4)
190
mJ
Peak Diode Recovery (Note 5)
5.3
V/ns
Maximum Power Dissipation
370
W
PD
Linear Derating Factor
2.5
W/°C
Junction Temperature
TJ
-55 ~ +175
°C
Storage Temperature Range
TSTG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit
is 120A. Note that current limitations arising from heating of the device leads may occur with some lead
mounting arrangements.
3. Repetitive rating; pulse width limited by max. junction temperature.
4. L=1.0mH, IAS=31A, VDD=50V, RG=25Ω, Starting TJ = 25°C
5. ISD≤30A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
VDSS
VGSS
ID
IDM
EAS
dv/dt
THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient (Note 1)
θJA
Junction to Case (Note 2)
θJC
Notes: 1. When mounted on 1" square PCB (FR-4 or G-10 Material).
2. Rθ is measured at TJ approximately 90°C.
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
62
0.402
UNIT
°C/W
°C/W
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ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS=0V, ID=250µA
VDS=100V, VGS=0V
VGS=20V
VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON) VGS=10V, ID=75A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate-to-Source Charge
QGS
ID=100µA (Note 1)
Gate-to-Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDS=30V, VGS=10V, ID=0.5A,
RG=25Ω (Note 1)
Turn-OFF Delay Time
tD(OFF)
Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current (Body Diode)
IS
MIN
TYP
MAX UNIT
100
2.0
20
100
-100
V
µA
nA
nA
4.0
5.5
V
mΩ
450
600
100
pF
pF
pF
240
48
42
1000
550
2000
700
nC
nC
nC
ns
ns
ns
ns
170
(Note 3)
A
Pulsed Source Current (Body Diode)
ISM
680
A
(Note 2)
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=75A (Note 1)
1.3
V
Body Diode Reverse Recovery Time
trr
150
ns
VGS=0V, IS=30A, dI/dt=100A/µs
(Note 1)
450
nC
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse width ≤ 400µs; duty cycle ≤ 2%.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit
is 120A. Note that current limitations arising from heating of the device leads may occur with some lead
mounting arrangements.
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www.unisonic.com.tw
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POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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POWER MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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