Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UT2408Z-C
Power MOSFET
20V, 8A N-CHANNEL MOSFET

DESCRIPTION
The UTC UT2408Z-C is an N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance.
The UTC UT2408Z-C is suitable for load switch and battery
protection applications.

FEATURES
* RDS(ON) <14.5 mΩ @ VGS = 4.5V, ID = 8A
RDS(ON) <19 mΩ @ VGS = 2.5V, ID = 4A

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Note:

UT2408ZG-K06B-2020-R
Pin Assignment: G: Gate
D: Drain
Package
DFN-6B(2×2)
Pin Assignment
1 2 3 4 5 6 7 8
D D G S D D D S
Packing
Tape Reel
S: Source
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
20
V
±12
V
TA=25°C
8
A
Continuous Drain Current (Note 4)
ID
TA=100°C
6
A
Pulsed Drain Current (Note 2)
IDM
32
A
TA=25°C
2.8
W
PD
Power Dissipation (Note 1)
TA=70°C
1.8
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
TYP
MAX
UNIT
Junction to Ambient (Note 1)
t ≤10s
37
45
°C/W
θJA
Junction to Ambient (Note 1, 3)
Steady State
66
80
°C/W
2
Notes: 1. The value of θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The Power dissipation PDSM is based on θJA t≤10s value and the maximum
allowed junction temperature of 150°C. The value in any given application depends on the user's specific
board design.
2. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low
frequency and duty cycles to keep initial TJ=25°C.
3. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient.
4. The maximum current rating is package limited.
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
BVDSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
VGS(TH)
ID(ON)
Static Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=20V, VGS=0V
VDS=20V, VGS=0V, TJ=55°C
VGS=+12V, VDS=0V
VGS=-12V, VDS=0V
20
VDS=VGS, ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=8A
VGS=4.5V, ID=8A, TJ=125°C
VGS=2.5V, ID=4A
VDS=5V, ID=8A
0.5
32
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=10V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VDS=0V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=10V, ID=1A
Gate to Source Charge
QGS
RG=100kΩ
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VGS=10V, VDS=10V, RL=20Ω,
Rise Time
tR
RG=25Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A,VGS=0V
Maximum Body-Diode Continuous
IS
Current
Body Diode Reverse Recovery Time
trr
IF=8A, dI/dt=100A/µS
Body Diode Reverse Recovery Charge
Qrr
UNISONIC TECHNOLOGIES CO., LTD
MIN TYP MAX UNIT
1
5
+100
-100
0.83
11.6 14.5
16.3 20.5
15
19
50
V
A
mΩ
mΩ
mΩ
S
525
170
120
2.4
pF
pF
pF
Ω
76
2
3
15
40
750
230
nC
nC
nC
ns
ns
ns
ns
0.65
11
2.7
1.2
V
µA
µA
nA
nA
1
V
3.5
A
ns
nC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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Preliminary
Power MOSFET
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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Preliminary
Power MOSFET
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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