Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UFS4310H
Power MOSFET
140A, 100V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UFS4310H is a N-CHANNEL power mosfet, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UFS4310H is suitable for hard switched and high
frequency circuits, etc.

FEATURES
*, RDS(ON)<7.0mΩ @ VGS=10V, ID=75A
* High switching speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UFS4310HL-TA3-T
UFS4310HG-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
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Copyright © 2016 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
100
V
±20
V
TC=25°C
140 (Note 1)
Continuous
A
ID
Drain Current [email protected]
TC=70°C
97 (Note 1)
550
A
Pulsed (Note 2)
IDM
Single Pulse Avalanche Energy (Note 3)
EAS
500
mJ
Power Dissipation
TC=25°C
PD
330
W
Peak Diode Recovery (Note 4)
dv/dt
4.6
V/ns
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Limited by TJmax, starting TJ=25°C, L=0.17mH, RG=25Ω, IAS=75A, VGS=10V. Part not recommended for use
above this value.
4. ISD ≤ 75A, di/dt ≤ 550A/µs, VDD ≤ V(BR)DSS, TJ ≤ 75°C

SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
Note: Rθ is measured at TJ approximately 90°C
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62.5
0.38
UNIT
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain-Source Leakage Current
Gate-Source
Leakage Current
Forward
Reverse
SYMBOL
V(BR)DSS
TEST CONDITIONS
VGS=0V, ID=250µA
Reference to 25°C, ID=1mA
∆V(BR)DSS/∆TJ
(Note 2)
VDS=100V,VGS=0V
IDSS
VDS=100V, VGS=0V, TJ=125°C
VGS=+20V
IGSS
VGS=-20V
RG
f=1.0MHz, open drain
MIN
TYP
MAX UNIT
100
V
0.064
V/°C
20
250
200
-200
µA
µA
nA
nA
Ω
Gate Resistance
1.9
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=75A (Note 3)
5.9
7.0
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
7200
pF
VDS=50V, VGS=0 V, f=1.0MHz
Output Capacitance
COSS
675
pF
Reverse Transfer Capacitance
CRSS
210
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
170
250
nC
VGS=10V, VDS=80V, ID=75A,
Gate Source Charge
QGS
46
nC
(Note 3)
62
nC
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
330
ns
VDD=30V, RG=25Ω, ID=0.5A,
Turn-ON Rise Time
tR
180
ns
V
=10V
Turn-OFF Delay Time
tD(OFF)
520
ns
GS
Turn-OFF Fall-Time
tF
140
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
140
IS
A
Current (Note 1)
Drain-Source Diode Forward Voltage
ISM
550
(Note 2)
IS=75A, VGS=0V, TJ=25°C
1.3
V
Drain-Source Diode Forward Voltage
VSD
(Note 3)
Reverse Recovery Time (Note 1)
trr
IS=75A, VGS=0V,
120
ns
dIF/dt=100A/µs
Reverse Recovery Charge (Note 1)
Qrr
200
nC
Notes: 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pulse width ≤ 400µs; duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
Charge
Gate Charge Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate Charge Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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