Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UBSS83
Preliminary
POWER MOSFET
MOSFET N-CHANNEL
ENHANCEMENT SWITCHING
TRANSISTOR

DESCRIPTION
The UTC UBSS83 is a MOSFET N-channel enhancement
switching transistor, it uses UTC’s advanced technology to provide
customers with a minimum on-state resistance, etc.
The UTC UBSS83 is suitable for analog and/or digital switch and
switch driver.

FEATURES
* Low ON resistance
* Low capacitances

SYMBOL

ORDERING INFORMATION
Ordering Number
UBSS83G-AD4-R
Note: Pin Assignment: G: Gate D: Drain

Package
S: Source
SOT-143
B: Substrate (b)
1
B
Pin Assignment
2
3
4
S
D
G
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UBSS83

Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
10
V
Source-Drain Voltage
VSD
10
V
Drain-Substrate Voltage
VDB
15
V
Source-Substrate Voltage
VSB
15
V
Drain Current (DC)
ID
50
mA
Power Dissipation (TA=25°C)
PTOT
230
mW
Junction Temperature
TJ
125
°C
Storage Temperature Range
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient in Free Air
θJA
Note: Device mounted on a ceramic substrate of 8mm×10mm×0.7mm.

VALUE
430
UNIT
K/W
ELECTRICAL CHARACTERISTICS (TAMB=25°C, unless otherwise specified)
PARAMETER
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Drain-Substrate Breakdown Voltage
Source-Substrate Breakdown Voltage
Drain-Source Leakage Current
Source-Drain Leakage Current
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Gate-Substrate Zener Voltages
Input Capacitance
Output Capacitance
Feed-Back Capacitance
Switching Times
SYMBOL
BVDSX
BVSDX
BVDBO
BVSBO
IDSoff
ISDoff
VGS(TH)
RDS(ON)
gFS
VZ(1)
VZ(2)
CISS
COSS
CRSS
tON
tOFF
TEST CONDITIONS
ID=10nA, VGS=VBS=-5V
VGD=VBD=-5V, ID=10nA
VGB=0, ID=10nA, Open Source
VGB=0, ID=10nA, Open Drain
VGS=VBS=-2V, VDS=6.6V
VGD=VBD=-2V, VSD=6.6V
VDS=VGS, VSB=0, ID=1µA
VGS=5V, ID=0.1mA, VSB=0
VGS=10V, ID=0.1mA, VSB=0
VGS=3.2V, ID=0.1mA, VSB=6.8V
VDS=10V, VSB=0, ID=20mA, f=1kHz
VDB=VSB=0, -IG=10µA
VDB=VSB=0, +IG=10µA
VGS=VBS=-15V, VDS=10V, f=1MHz
VDD=10V,Vi=5V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
10
V
10
V
15
V
15
V
10
nA
10
nA
0.1
2.0
V
70
Ω
45
Ω
80 120
Ω
10
15
mS
12.5
V
12.5
V
1.5
pF
1.0
pF
0.6
pF
1.0
ns
5.0
ns
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UBSS83

Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
VDD
50Ω
OUTPUT
0.1µF
90%
VO
630Ω
T.U.T
Vi
10%
50Ω
INPUT
tR
tON
tF
tOFF
Switching Times Test Circuit and Input and Output Waveforms.
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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