Analog Power AM110N06-08P N-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 60 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 8 @ VGS = 10V 13 @ VGS = 4.5V ID(A) 110a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 TA=25°C ID 110 Continuous Drain Current a IDM Pulsed Drain Current b 390 a IS 110 Continuous Source Current (Diode Conduction) a T =25°C P 300 Power Dissipation A D TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol Maximum RθJA 62.5 RθJC 0.5 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM110N06-08P_1A Analog Power AM110N06-08P Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance Diode Forward Voltage gfs VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 48 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A IS = 55 A, VGS = 0 V Dynamic VDS = 30 V, VGS = 4.5 V, ID = 20 A VDS = 30 V, RL = 1.5 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 MHz Min Typ Max 1 ±100 1 25 110 Unit V nA uA A 8 13 40 1.1 64 28 36 35 60 174 52 9289 572 555 mΩ S V nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. 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APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM110N06-08P_1A Analog Power AM110N06-08P Typical Electrical Characteristics 100 0.015 4V 0.012 80 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 0.009 4.5V 0.006 6V 8V,10V 60 40 20 0.003 0 0 0 20 40 60 80 ID-Drain Current (A) 0 100 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 100 0.02 TJ = 25°C TJ = 25°C ID = 20A IS - Source Current (A) RDS(on) - On-Resistance(Ω) 1 0.015 0.01 0.005 10 1 0.1 0.01 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0.2 10 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 100 16000 F = 1MHz 14000 12000 10V,8V Capacitance (pf) ID - Drain Current (A) 80 6V 60 4.5V 40 8000 6000 4000 4V 20 Ciss 10000 2000 0 Coss Crss 0 0 0.2 0.4 0.6 0.8 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM110N06-08P_1A Analog Power AM110N06-08P Typical Electrical Characteristics 2 VDS = 30V 9 ID = 20A 8 RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 7 6 5 4 3 2 1.5 1 1 0 0.5 0 26.6 53.2 79.8 106.4 133 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 400 10 uS 100 100 uS 1 mS ID Current (A) 0 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC DC 1 0.1 Idm limit Limited by RDS 350 300 250 200 150 100 50 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA 0.1 RθJA = 62.5 °C /W 0.05 P(pk) 0.02 t1 t2 0.01 Single Pulse 0.001 0.0001 0.001 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM110N06-08P_1A Analog Power AM110N06-08P Package Information © Preliminary 5 Publication Order Number: DS_AM110N06-08P_1A