KSMU4P40 -400V P-channel MOSFET KERSMI ELECTRONIC CO.,LTD. Description This P-channel MOSFET s use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS RDSON ID -4A 3.1 Ω Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. -400V 1) 2) 3) 4) TO-251 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -400 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -4.0 Continuous Drain Current-T=100℃ -1.71 Pulsed Drain Current2 -10.8 EAS Single Pulse Avalanche Energy3 260 PD Power Dissipation4 50 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Ratings Units ID A mJ W Thermal Characteristics Symbol Parameter RƟJC Thermal Resistance ,Junction to Case1 2.5 RƟJA Thermal Resistance, Junction to Ambient1 110 www.kersemi.com ℃/W 1 KSMU4P40 KERSMI ELECTRONIC CO.,LTD. Package Marking and Ordering Information Part NO. Marking Package KSMU4P40 KSMU4P40 TO-251 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -400 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -3.0 — -5.0 V VDS=10V,ID=6A — — 3.1 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A — 2.5 — — 520 680 — 80 105 — 11 15 — 13 35 — 55 120 — 35 80 — 37 85 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics — 18 23 Gate-SourceCharge VGS=4.5V, VDS=20V, — 3.8 — Gate-Drain “Miller” Charge ID=6A — 9.4 — ns ns ns ns nC nC nC — — -5.0 V — 260 — ns — 1.4 — nC td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS Notes: www.kersemi.com 2 KSMU4P40 KERSMI ELECTRONIC CO.,LTD. 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max .rating .The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics Figure 3. Capacitance Characteristics unless otherwise noted Figure 2. Transfer Characteristics Figure 4. On-Resistance Variation vs. Drain Current and Gate Voltage www.kersemi.com 3 KSMU4P40 KERSMI ELECTRONIC CO.,LTD. Figure 5. Gate Charge Characteristics Figure 7.Breakdown Voltage Variation vs. Temperature Figure 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 8.Maximum Safe Operating Area Figure 9. Transient Thermal Response Curve www.kersemi.com 4