lsir3341-s175-pf.pdf

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
INFRARED EMITTING DIODES
Pb
Lead-Free Parts
LSIR3341/S175-PF
DATA SHEET
DOC. NO :
QW0905- LSIR3341/S175-PF
REV.
:
A
DATE
:
03 - Mar. - 2008
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/7
PART NO. LSIR3341/S175-PF
Package Dimensions
5.0
5.9
7.6 8.6
1.5
MAX
48MIN
0.5
TYP
2.45TYP
1.0MIN
+
-
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
Features:
1. High radiant intensity.
2. Suitable for pulsed applications.
3. Low average degradation.
Descriptions:
The LSIR3331-PFseries are high power solution grown efficiency Gallium Arsenide
infrared emitting diodes encapsulated in blue transparent plastic
T-1 3/4 package individually
Device Selection Guide:
PART NO
MATERIAL
LSIR3341/S175-PF
GaAIAs/GaAs
LENS COLOR
Blue Transparent
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PART NO. LSIR3341/S175-PF
Page 2/7
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Parameter
Symbol
UNIT
SIR
Power Dissipation
PD
100
mW
Peak Forward Current
(300PPS,10 μs Pulse)
IFP
1
A
Forward Current
IF
50
mA
Reverse Voltage
Vr
5
V
Electrostatic Discharge
ESD
2000
V
Operating Temperature
Topr
-40 ~ +85
℃
Storage Temperature
Tstg
-40 ~ +85
℃
Electrical Optical Characteristics (Aa=25℃)
SYMBOL
Min.
Typ.
Radiant Intensity
Le
8.0
Aperture Radiant Incidence
Ee
1.1
PARAMETER
Max.
UNIT
TEST CONDITION
17
mW/sr
IF=20mA
2.4
mW/cm
IF=20mA
λpeak
880
nm
IF=20mA
△λ
50
nm
IF=20mA
Forward Voltage
VF
1.4
1.7
V
IF=20mA
Reverse Current
IR
100
μA
VR=5V
Peak Wavelength
Spectral Line Half Width
Viewing Angle
2θ1/2
2
20
Note : 1.The forward voltage data did not including ± 0.1V testing tolerance.
2. The radiant intensity data did not including ±15% testing tolerance.
deg
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PART NO. LSIR3341/S175-PF
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Typical Electro-Optical Characteristics Curve
SIR CHIP
Fig.2 Relative Radiant Intensity vs. Wavelength
Fig.1 Forward Current vs. Rorward Voltage
Relative Radiant Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1
0.1
0.5
1.0
1.5
2.0
2.5
1.0
0.5
0.0
750
800
Fig.3 Relative Radiant Power
vs. Forward DC Current
950
1000
1050
Fig.4 Relative Radiant Power
vs. Forward Peak Current
10.0
Relative Radiant Power
Normalize @100 mA
10.0
1.0
0.1
1
10
1.0
0.1
10
100
100
1000
IFPK (mA)
IFDC(mA)
Fig.5 Forward DC Voltage vs. Temperature
Fig.6 Relative Radiant Power vs. Temperature
1.2
3.0
Relative Radiant Power
Normalize @ 20mA,25℃
Forward DC Voltage @20 mA
Normalize @ 25 ℃
900
Wavelength(nm)
Forward Voltage(V)
Relative Radiant Power
Normalize @20mA
850
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
Ambient Temperature [℃]
80
100
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature[ ℃]
80
100
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PART NO. LSIR3341/S175-PF
Page 4/7
Storage time:
1.The operation of Temperatures and RH are : 5 ℃~35℃,RH<60%.
2.Once the package is opened, the products should be used within a week.
Otherwise, they should be kept in a damp proof box with descanting agent.
Considering the tape life, we suggest our customers to use our products within
a year(from production date).
3.If opened more than one week in an atmosphere 5 ℃ ~ 35℃,RH<60%,
they should be treated at 60 ℃± 5 ℃fo r 15hrs.
Drive Method:
LED is a current operated device, and therefore, require some kind of current limiting incorporated into
the driver circuit. This current limiting typically takes the form of a current limiting resistor placed in series
with the LED.
Consider worst case voltage variations than could occur across the current limiting resistor. The forwrd
current should not be allowed to change by more than 40 % of its desired value.
Circuit model A
Circuit model B
LED
LED
(A) Recommended circuit.
(B) The difference of brightness between LED could be found due to the VF-IF characteristics of LED.
Cleaning:
Use alcohol-based cleaning solvents such as isopropyl alcohol to clean the LED.
ESD(Electrostatic Discharge):
Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic
glove is recommended when handing these LED. All devices, equipment and machinery must be properly
grounded.
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PART NO. LSIR3341/S175-PF
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Mounting:
1. If the leads are subjected to stress during soldering
a printed circuit board, illumination failure may result
immediately or later during use. For this reason,
make sure that the intervals between the installation
holes in the board are equal to the intervals between
the leads (after forming if done) so that no stress is
applied to the lead.
(O)
(X)
(O)
2. The LED lamps are designed for high-density mounting and have a structure which can alleviate mechanical stress due to clinching . Nevertheless , take care
to avoid the occurrence of residual mechanical stress
due to clinching .
15°
45°
Anode side(cathode side on GaAlAs chips)
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PART NO. LSIR3341/S175-PF
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Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350°C Max
Soldering Time:3 Seconds Max(One Time)
Distance:2mm Min(From solder joint to body)
2.Wave Soldering Profile
Dip Soldering
Preheat: 120° C Max
Preheat time: 60seconds Max
Ramp-up
2° C/sec(max)
Ramp-Down:-5° C/sec(max)
Solder Bath:260° C Max
Dipping Time:3 seconds Max
Distance:2mm Min(From solder joint to body)
Temp(° C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0° 0
2° /sec
max
Preheat
60 Seconds Max
50
100
Note: 1.Wave solder should not be made more than one time.
2.You can just only select one of the soldering conditions as above.
150
Time(sec)
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PART NO. LSIR3341/S175-PF
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Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=85 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5 ℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5 ℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11