Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT140N10H
Power MOSFET
140A, 100V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UTT140N10H is a N-channel power mosfet, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UTT140N10H is suitable for hard switched and
high frequency circuits, etc.

FEATURES
*, RDS(ON)<7.0mΩ @ VGS=10V, ID=75A
* High switching speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT140N10HL-TA3-T
UTT140N10HG-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
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UTT140N10H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous TC=25°C
140 (Note 1)
A
ID
Drain Current [email protected]
97 (Note 1)
A
TC=100°C
550
A
Pulsed (Note 2)
IDM
Single Pulse Avalanche Energy (Note 3)
EAS
980
mJ
Power Dissipation
TC=25°C
PD
330
W
Peak Diode Recovery (Note 4)
dv/dt
14
V/ns
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Linear Derating Factor
2.2
W/°C
Soldering Temperature, for 10 seconds
300
°C
(1.6mm From Case)
Mounting torque, 6-32 or M3 srew
10 lb·in (1.1N·m)
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Limited by TJmax, starting TJ=25°C, L=0.35mH, RG=25Ω, IAS=75A, VGS=10V. Part not recommended for use
above this value.
4. ISD ≤ 75A, di/dt ≤ 550A/µs, VDD ≤ V(BR)DSS, TJ ≤ 75°C

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
Junction to Ambient
θJA
Junction-to-Case
θJC
Note: When mounted on 1" square PCB (FR-4 or G-10 Material).

RATINGS
62
0.45
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain-Source Leakage Current
Gate-Source
Leakage Current
Forward
Reverse
Gate Resistance
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
SYMBOL
V(BR)DSS
VGS=0V, ID=250µA
Reference to 25°C, ID=1mA
∆V(BR)DSS/∆TJ
(Note 2)
VDS=100V,VGS=0V
IDSS
VDS=100V, VGS=0V, TJ=125°C
VGS=+20V
IGSS
VGS=-20V
RG
f=1.0MHz, open drain
VGS(TH)
RDS(ON)
gFS
UNISONIC TECHNOLOGIES CO., LTD
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TEST CONDITIONS
VDS =VGS, ID=250µA
VGS=10V, ID=75A (Note 3)
VDS=50V, ID =75A
MIN
TYP
MAX
100
V
0.064
V/°C
20
250
200
-200
µA
µA
nA
nA
Ω
4.0
7.0
V
mΩ
S
1.4
2.0
5.6
160
UNIT
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=50V, VGS=0 V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Effective Output Capacitance (Energy
COSS eff (ER)
Related) (Note 5)
VDS=0~80V,VGS=0V,
Effective Output Capacitance (Time
COSS eff. (TR)
Related) (Note 4)
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=80V, ID=75A,
Gate Source Charge
QGS
(Note 3)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=65V, RG=2.6Ω, ID=75A,
VGS=10V
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
MOSFET symbol showing the
IS
Current
integral reverse p-n-junction
diode
Drain-Source Diode Forward Voltage
(Note 2, 5)
ISM
Drain-Source Diode Forward Voltage
VSD
MIN
TYP
MAX
UNIT
7670
540
280
pF
pF
pF
650
pF
720.1
pF
170
46
62
26
110
68
78
250
140
(Note 1)
nC
nC
nC
ns
ns
ns
ns
A
550
IS=75A, VGS=0V, TJ=25°C
(Note 3)
1.3
V
TJ=25°C
45
68
IF=75A,
ns
dI/dt=100A/µs
55
83
TJ=125°C
VR=85V
TJ=25°C
82
120
nC
Body Diode Reverse Recovery Charge
QRR
(Note 3)
120
180
TJ=125°C
Reverse Recovery Current
IRRM
TJ=25°C
3.3
A
Intrinsic turn-on time is negligible (turn-on is dominated by
Forward Turn-On Time
tON
LS+LD)
Notes: 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pulse width≤400µs; duty cycle ≤ 2%.
4. COSS eff. (TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0~
80% VDSS.
5. COSS eff. (ER) is a fixed capacitance that gives the same energy as COSS while VDS is rising from 0~80%
VDSS.
6. When mounted on 1" square PCB (FR-4 or G-10 Material).
Body Diode Reverse Recovery Time
tRR
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTT140N10H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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