Datasheet

UNISONIC TECHNOLOGIES CO., LTD
6NM60
Preliminary
Power MOSFET
6.0A, 600V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 6NM60 is a Super Junction MOSFET Structure and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.

FEATURES
* RDS(on) < 1.08Ω @ VGS=10V, ID=3.0A
* Improved dv/dt capability
* Fast switching
* 100% avalanche tested

SYMBOL

ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
6NM60L-TA3-T
6NM60G-TA3-T
6NM60L-TF1-T
6NM60G-TF1-T
6NM60L-TF2-T
6NM60G-TF2-T
6NM60L-TF3-T
6NM60G-TF3-T
6NM60L-TM3-R
6NM60G-TM3-R
6NM60L-TN3-R
6NM60G-TN3-R
Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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6NM60

Preliminary
Power MOSFET
MARKING
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6NM60

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
6
A
Pulsed Drain Current (Note 2)
IDM
52
A
Avalanche Current (Note 2)
IAR
13
A
Single Pulsed Avalanche Energy (Note 3)
EAS
134
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.9
V/ns
TO-220
125
W
TO-220F/TO-220F1
40
W
Power Dissipation
PD
TO-220F2
42
W
TO-251/TO-252
60
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 159mH, IAS = 1.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATING
62.5
110
1
3.2
2.97
2.08
UNIT
°C/W
°C/W
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6NM60

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
QG
VDS=50V, ID=1.3A, VGS=10V
Gate-Source Charge
QGS
IG=100μA (Note 1,2)
Gate-Drain Charge
QGD
Turn-On Delay Time (Note 1)
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω
Turn-On Rise Time
tR
(Note
1,2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
VGS = 0V, IS = 6 A
Reverse Recovery Time (Note 1)
trr
VGS = 0V, IS = 6A,
dIF / dt =100A/μs (Note 1)
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
600
2.5
10
100
-100
V
μA
nA
nA
4.5
1.08
V
Ω
360
170
21
pF
pF
pF
30
2.8
8.3
45
47
140
44
nC
nC
nC
nS
nS
nS
nS
6
24
1.4
325
2.64
A
A
V
nS
μC
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6NM60
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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6NM60

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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6NM60
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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