Datasheet

UNISONIC TECHNOLOGIES CO., LTD
6NM65
Preliminary
Power MOSFET
6.0A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 6NM65 is a high voltage super junction MOSFET and is
designed to have better characteristics.
The UTC 6NM65 Utilizing an advanced charge-balance
technology, enhance system efficiency, improve EMI and reliability.
such as low gate charge, low on-state resistance and have a high
power density and high rugged avalanche characteristics. This super
junction MOSFET usually used at AC/DC power conversion, and
industrial power applications.

FEATURES
* RDS(on) < 1.15Ω @ VGS=10V, ID=3A
* Improved dv/dt capability
* Fast switching
* 100% avalanche tested

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
6N65L-TA3-T
6N65G-TA3-T
TO-220
6N65L-TF3-T
6N65G-TF3-T
TO-220F
6N65L-TF1-T
6N65G-TF1-T
TO-220F1
6N65L-TM3-T
6N65G-TM3-T
TO-251
6N65L-TN3-R
6N65G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
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6NM65

Preliminary
Power MOSFET
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
6
A
Pulsed Drain Current (Note 2)
IDM
52
A
Avalanche Current (Note 2)
IAR
13
A
Single Pulsed Avalanche Energy (Note 3)
EAS
150
mJ
Repetitive Avalanche Energy (Note 2)
EAR
17
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-220
125
W
Power Dissipation
PD
TO-220F/TO-220F1
40
W
TO-251/TO-252
60
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 150mH, IAS = 1.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Drain current limited by maximum junction temperature

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1
Junction to Ambient
TO-251/TO-252
TO-220
Junction to Case
TO-220F/TO-220F1
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATING
UNIT
62.5
°C/W
110
1.0
3.2
2.6
°C/W
°C/W
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
650
VDS = 650V, VGS = 0V
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250mA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.5
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, ID=1.3A, VGS=10 V
Gate-Source Charge
QGS
IG=100μA (Note 1,2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD =30V, ID =0.5A, RG =25Ω
(Note 1,2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 6 A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0V, IS = 6A,
dIF / dt =100A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating ambient temperature
UNISONIC TECHNOLOGIES CO., LTD
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0.5
V
10
μA
100 nA
-100 nA
V/°C
4.5
1.15
V
Ω
190
150
27
pF
pF
pF
52
4.0
11
40
80
120
45
nC
nC
nC
nS
nS
nS
nS
316
28
1.4
V
6
A
52
A
nS
μC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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Preliminary
Power MOSFET
76
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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