Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF4848
Preliminary
Power MOSFET
3.7A, 150V N-CHANNEL (D-S)
MOSFET

DESCRIPTION
The UTC UF4848 is an N-Channel MOSFET, it uses UTC’s
advanced technology to provide customers with a minimum on-state
resistance and low gate charge, etc.
SOP-8

FEATURES
* RDS(ON) < 85 mΩ @ VGS=10V, ID=3.7A
RDS(ON) < 95 mΩ @ VGS=6.0V, ID=3.0A
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UF4848G-S08-R
Pin Assignment: S: Source
Package
G: Gate
SOP-8
D: Drain
1
S
2
S
Pin Assignment
3 4 5 6 7
S G D D D
8
D
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R209-080.a
UF4848

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
10S
STEADY STATE
UNIT
Drain-Source Voltage
VDSS
150
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TA=25°C
3.7
2.7
A
ID
TJ=150°C (Note 1)
3.0
2.1
A
TA=70°C
Pulsed Drain Current
IDM
25
A
Single Pulse Avalanche Energy (Note 3)
EAS
0.5
mJ
Avalanche Current
L=0.1mH
IAS
10
A
Continuous Source Current (Diode Conduction) (Note 1)
IS
2.5
1.3
A
Maximum Power Dissipation
TA=25°C
3.0
1.5
W
PD
(Note 1)
1.9
1.0
W
TA=70°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=55mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD ≤ 2.4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
5. The data tested by surface mounted Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%.

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
t≤10s
Junction to Ambient (Note 1)
Steady-State
Junction-to-Foot (Drain)
Steady-State
Note: Surface Mounted on 1" x 1" FR4 board.

MIN
θJA
θJF
TYP
35
68
18
MAX
42
82
23
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
STATIC CHARACTERISTICS
SYMBOL
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
MIN TYP MAX UNIT
VDS=120V, VGS=0V
VDS=120V, VGS=0V, TJ=55°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
On State Drain Current (Note 1)
ID(ON)
VDS≥5V, VGS=10V
25
Static Drain-Source On-State Resistance
VGS=10V, ID=3.5A
RDS(ON)
(Note 1)
VGS=6.0V, ID=3.0A
DYNAMIC PARAMETERS (Note 2)
Total Gate Charge
QG
VGS=10V, VDS=75V, ID=3.5A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Gate Resistance
RG
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=75V, RL=21Ω, ID=≈3.5A,
VGEN=10V, RG=6Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage (Note 1)
VSD
IS=2.5A, VGS=0V
Reverse Recovery Time
tRR
IF=2.5A, dI/dt=100A/µs
Notes: 1. The data tested by surface mounted Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1
µA
5
µA
+100 nA
-100 nA
68
76
85
95
17
3.2
6.0
0.85
9.0
10
24
17
0.75
45
V
A
mΩ
mΩ
nC
nC
nC
Ω
ns
ns
ns
ns
1.2
V
ns
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UF4848
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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