Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT140N08H
Power MOSFET
140A, 80V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UTT140N08H is an N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance, high switching speed.
The UTC UTT140N8 is suitable for motor control, etc.

FEATURES
* RDS(ON) < 3.5mΩ @ VGS=10V, ID=30A
* High switching speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT140N08HL-TA3-T
UTT140N08HG-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
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Copyright © 2016 Unisonic Technologies Co., Ltd
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UTT140N08H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
80
V
±20
V
TC=25°C
140 (Note 7)
A
Continuous
ID
Drain Current
TC=100°C
101
A
340
A
Pulsed (Note 3)
IDM
TA=25°C
10
A
IDSM
Continuous Drain Current
TA=100°C
8
A
Avalanche Current (Note 3)
IAS, IAR
125
A
Avalanche Energy L=0.1mH (Note 3)
EAS, EAR
781
mJ
TC=25°C
417
W
PD
Power Dissipation (Note 2)
TC=100°C
208
W
TA=25°C
1.9
W
PDSM
Power Dissipation (Note 1)
TA=70°C
1.2
W
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 1)
Junction to Ambient (Note 1, 4)
Junction-to-Case

SYMBOL
VDSS
VGSS
SYMBOL
t≤10s
Steady State
Steady State
θJA
θJC
RATINGS
13.9
65
0.36
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
SYMBOL
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IGSS
BVDSS
VGS(TH)
ID(ON)
RDS(ON)
gFS
CISS
COSS
CRSS
RG
QG (10V)
QGS
QGD
tD(ON)
tR
trr
Qrr
UNISONIC TECHNOLOGIES CO., LTD
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TEST CONDITIONS
MIN TYP MAX UNIT
ID=250µA, VGS=0V
VDS=80V, VGS=0V
VDS=80V, VGS=0V, TJ=55°C
VGS=±20V, VDS=0V
80
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=30A
VDS=5V, ID=30
2.5
340
VGS=0V, VDS=30V, f=1.0MHz
VDS=0V, VGS=0V, f=1.0MHz
VGS=10V, VDS=30V, ID=30A
VGS=10V, VDS=30 RL=1, RGEN=3Ω
1
5
±100
3.3
3.9
3.1
75
3.5
V
µA
µA
µA
V
A
mΩ
S
3753
679
54
3.2
pF
pF
pF
Ω
96
17
13
18
38
52
521
nC
nC
nC
nS
nS
ns
nC
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Turn-OFF Delay Time
tD(OFF)
57
nS
Fall-Time
tF
8
nS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A,VGS=0V
0.73
1
V
Maximum Body-Diode Continuous
IS
140
A
Current
Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The Power dissipation PDSM is based on θJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user's specific board design,
and the maximum temperature of 175may be used if the PCB allows it.
2. The power dissipation PD is based on TJ(MAX)=175, using junction-to-case thermal resistance, and is more
useful in setting the upper dissipation limit for cases where additional heatsinking is used.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175. Ratings are based on low
frequency and duty cycles to keep initial TJ=25°C.
4. The θJA is the sum of the thermal impedence from junction to case θJC and case to ambient.
5. Te static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. F.
These curves are based on the junction-to-case thermal impedence which is measured with the device.
6. These curves are based on the junction-to-case thermal impedence which is measured with the device
mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve
provides a single pulse rating.
7. The maximum current rating is limited by bond-wires.
8. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTT140N08H

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTT140N08H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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