Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT75N06
Preliminary
Power MOSFET
75A, 60V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UTT75N06 is n-channel enhancement mode power
field effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application.

SOP-8
FEATURES
* RDS(ON) < 10 mΩ @ VGS = 10 V, ID = 35 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:
Package
UTT75N06G-S08-R
Pin Assignment: G: Gate D: Drain
SOP-8
1
S
2
S
Pin Assignment
3 4 5 6 7
S G D D D
8
D
Packing
Tape Reel
S: Source
UTT75N06G-S08-R

(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) S08: SOP-8
(3)Green Package
(3) G: Halogen Free and Lead Free
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
TC = 25°C
75
A
Continuous Drain Current
ID
TC = 100°C
56
A
Drain Current Pulsed (Note 2)
IDM
280
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
80
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
10
V/ns
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.1mH, IAS=40A, VDD=25V, RG=20Ω, Starting TJ=25°C
4. ISD≤48A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
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SYMBOL
θJA
θJC
RATINGS
110
24
UNIT
°C/W
°C/W
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UTT75N06

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
60
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
Forward
VGS=20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
Breakdown Voltage Temperature
△BVDSS/△TJ ID = 1mA, Referenced to 25°C
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=35A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A
Gate-Source Charge
QGS
RG=100kΩ (Note 1, 2)
Gate-Drain Charge (Miller Charge)
QGD
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=70A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
VGS=0V, IS=70A
dIF/dt=100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
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TYP MAX UNIT
1
100
-100
0.08
V
μA
nA
nA
V/°C
4.0
10
V
mΩ
3000
450
270
pF
pF
pF
220
30
20
50
60
390
130
nC
nC
nC
ns
ns
ns
ns
1.4
V
70
A
280
90
300
ns
μC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
1B Peak Diode Recovery dv/dt Waveforms
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
tD(ON)
Pulse Width≤1μs
tD(OFF)
tF
tR
Duty Factor≤0.1%
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS
12V
Same Type
as D.U.T.
50kΩ
0.2μF
QG
10V
0.3μF
VDS
QGS
QGD
VGS
DUT
1mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
R
VDD
G
10V
D.U.T.
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
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Fig. 4B Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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